JPS62105472A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS62105472A
JPS62105472A JP24544485A JP24544485A JPS62105472A JP S62105472 A JPS62105472 A JP S62105472A JP 24544485 A JP24544485 A JP 24544485A JP 24544485 A JP24544485 A JP 24544485A JP S62105472 A JPS62105472 A JP S62105472A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
side wall
gate electrode
film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24544485A
Other languages
Japanese (ja)
Inventor
Yoshiki Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24544485A priority Critical patent/JPS62105472A/en
Publication of JPS62105472A publication Critical patent/JPS62105472A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a semiconductor device of LDD structure whose dimension is sufficiently controlled, by forming a side wall with a second thick insulative film on a first thin insulative film formed on a semiconductor substrate after the formation of gate electrode.
CONSTITUTION: A gate oxide film 2 and a polysilicon gate electrode 3 are formed on a semiconductor substrate 1, and a low density ion implantation region 4 is formed by implanting ion of inverse conduction type to the semiconductor substrate 1 where the gate electrode 3 is used as a mask. A thin oxide film 7 is deposited on the whole surface of the semiconductor substrate 1, and a thick nitride film 9 is deposited thereon. This nitride film 9 is subjected to anisotropic etching to form a side wall 9a. After eliminating an oxide film 7, a high density ion implantation region 6 is formed by implanting ion of inverse conduction type to the semiconductor substrate 1 where the side wall 9a is used as a mask. As the result of application of the side wall 9a which does not become the electrode of floating state, the LDD structure whose dimension is highly controlled can be formed.
COPYRIGHT: (C)1987,JPO&Japio
JP24544485A 1985-10-31 1985-10-31 Manufacture of semiconductor device Pending JPS62105472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24544485A JPS62105472A (en) 1985-10-31 1985-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24544485A JPS62105472A (en) 1985-10-31 1985-10-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS62105472A true JPS62105472A (en) 1987-05-15

Family

ID=17133750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24544485A Pending JPS62105472A (en) 1985-10-31 1985-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS62105472A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224363A (en) * 1987-03-13 1988-09-19 Nec Corp Manufacture of semiconductor integrated circuit
JP2007150292A (en) * 2005-11-17 2007-06-14 Ememory Technology Inc Semiconductor element and its manufacturing method
JP2012234941A (en) * 2011-04-28 2012-11-29 Denso Corp Manufacturing method of semiconductor device and semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63224363A (en) * 1987-03-13 1988-09-19 Nec Corp Manufacture of semiconductor integrated circuit
JP2007150292A (en) * 2005-11-17 2007-06-14 Ememory Technology Inc Semiconductor element and its manufacturing method
JP2012234941A (en) * 2011-04-28 2012-11-29 Denso Corp Manufacturing method of semiconductor device and semiconductor device

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