JPS62102498A - Memory cell power source control circuit for static-type random access memory - Google Patents

Memory cell power source control circuit for static-type random access memory

Info

Publication number
JPS62102498A
JPS62102498A JP60240971A JP24097185A JPS62102498A JP S62102498 A JPS62102498 A JP S62102498A JP 60240971 A JP60240971 A JP 60240971A JP 24097185 A JP24097185 A JP 24097185A JP S62102498 A JPS62102498 A JP S62102498A
Authority
JP
Japan
Prior art keywords
power source
bit line
memory cell
control circuit
source control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60240971A
Other languages
Japanese (ja)
Inventor
Takayuki Otani
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60240971A priority Critical patent/JPS62102498A/en
Priority claimed from US06/800,270 external-priority patent/US4760562A/en
Publication of JPS62102498A publication Critical patent/JPS62102498A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To attain a low power consumption by providing a power source control circuit at every section obtained by putting together plural columns in a memory cell array and reducing a bit line current with respect to a nonselected section.
CONSTITUTION: N-sections are constructed with M-columns in the memory array as one section, source terminals of drive transistors Q3 and Q4 for each memory cell 5 are connected to voltage converting circuits 301W30N. If a section selection signal SS1 selects the circuit 301, its output node 30'is set to a ground ing potential. When the circuit 301 is not selected, the output node 30' is set to an inbetween of a power source potential VDD and the grounding potential. In terms of a nonselected section the bit line current passing a bit line load circuit 6→ a bit line BL or an inversion BL→ the transistor Q3 or Q4 is reduced to decrease power consumption.
COPYRIGHT: (C)1987,JPO&Japio
JP60240971A 1985-10-28 1985-10-28 Memory cell power source control circuit for static-type random access memory Pending JPS62102498A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60240971A JPS62102498A (en) 1985-10-28 1985-10-28 Memory cell power source control circuit for static-type random access memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60240971A JPS62102498A (en) 1985-10-28 1985-10-28 Memory cell power source control circuit for static-type random access memory
US06/800,270 US4760562A (en) 1984-12-04 1985-11-21 MOS static memory circuit

Publications (1)

Publication Number Publication Date
JPS62102498A true JPS62102498A (en) 1987-05-12

Family

ID=17067379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60240971A Pending JPS62102498A (en) 1985-10-28 1985-10-28 Memory cell power source control circuit for static-type random access memory

Country Status (1)

Country Link
JP (1) JPS62102498A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241091A (en) * 1988-03-23 1989-09-26 Hitachi Ltd Semiconductor device
JPH02118992A (en) * 1988-10-27 1990-05-07 Matsushita Electric Ind Co Ltd Static type semiconductor storage device
JP2006172678A (en) * 2004-12-10 2006-06-29 Texas Instr Inc <Ti> Static random access memory having decreased leakage current during active mode, and its operating method
JP2006331519A (en) * 2005-05-25 2006-12-07 Toshiba Corp Semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5589983A (en) * 1978-12-28 1980-07-08 Fujitsu Ltd Static memory cell
JPS5990290A (en) * 1982-11-12 1984-05-24 Toshiba Corp Semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5589983A (en) * 1978-12-28 1980-07-08 Fujitsu Ltd Static memory cell
JPS5990290A (en) * 1982-11-12 1984-05-24 Toshiba Corp Semiconductor memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01241091A (en) * 1988-03-23 1989-09-26 Hitachi Ltd Semiconductor device
JPH02118992A (en) * 1988-10-27 1990-05-07 Matsushita Electric Ind Co Ltd Static type semiconductor storage device
JP2006172678A (en) * 2004-12-10 2006-06-29 Texas Instr Inc <Ti> Static random access memory having decreased leakage current during active mode, and its operating method
JP2006331519A (en) * 2005-05-25 2006-12-07 Toshiba Corp Semiconductor memory device

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