JPS6197976A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6197976A
JPS6197976A JP21845884A JP21845884A JPS6197976A JP S6197976 A JPS6197976 A JP S6197976A JP 21845884 A JP21845884 A JP 21845884A JP 21845884 A JP21845884 A JP 21845884A JP S6197976 A JPS6197976 A JP S6197976A
Authority
JP
Japan
Prior art keywords
effect transistor
channel field
eprom
conductive layers
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21845884A
Inventor
Kazuhiro Komori
Kosuke Okuyama
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP21845884A priority Critical patent/JPS6197976A/en
Publication of JPS6197976A publication Critical patent/JPS6197976A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Abstract

PURPOSE:To contrive to improve the information write-in efficiency and the information readout efficiency of an EPROM by a method wherein the memory cell of the EPROM is constituted using the information write-in element as a P-channel field-effect transistor and using the information readout element as an N-channel field-effect transistor. CONSTITUTION:An N-channel field-effect transistor Qn chiefly consists of a semiconductor substrate 5, insulating films 8A and 10, conductive layers 9 and 11 and a pair of semiconductor regions 13. A P-channel field-effect transistor Qp chiefly consists of a semiconductor plate 7, insulating films 8B and 10, conductive layers 9 and 11 and a pair of semiconductor regions 14. The memory cell M of the EPROM is constituted of the field-effect transistor Qn and the field-effect transistor Qp, both being connected electrically by at least the respective conductive layers 9 (floating gate electrodes).
JP21845884A 1984-10-19 1984-10-19 Semiconductor integrated circuit device Pending JPS6197976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21845884A JPS6197976A (en) 1984-10-19 1984-10-19 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21845884A JPS6197976A (en) 1984-10-19 1984-10-19 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6197976A true JPS6197976A (en) 1986-05-16

Family

ID=16720216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21845884A Pending JPS6197976A (en) 1984-10-19 1984-10-19 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6197976A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329980A (en) * 1986-07-10 1988-02-08 Sgs Microelettronica Spa Non-volatile semiconductor memory device
EP0263318A2 (en) * 1986-09-30 1988-04-13 Kabushiki Kaisha Toshiba Semiconductor memory
US5686749A (en) * 1994-09-29 1997-11-11 Nec Corporation Non-volatile semiconductor memory device with thin film transistor formed on a separation insulating film adjacent to a memory cell, and method of making thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329980A (en) * 1986-07-10 1988-02-08 Sgs Microelettronica Spa Non-volatile semiconductor memory device
EP0263318A2 (en) * 1986-09-30 1988-04-13 Kabushiki Kaisha Toshiba Semiconductor memory
US5050124A (en) * 1986-09-30 1991-09-17 Kabushiki Kaisha Toshiba Semiconductor memory having load transistor circuit
US5686749A (en) * 1994-09-29 1997-11-11 Nec Corporation Non-volatile semiconductor memory device with thin film transistor formed on a separation insulating film adjacent to a memory cell, and method of making thereof

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