JPS6196439A - Lens defect inspecting instrument - Google Patents

Lens defect inspecting instrument

Info

Publication number
JPS6196439A
JPS6196439A JP21633484A JP21633484A JPS6196439A JP S6196439 A JPS6196439 A JP S6196439A JP 21633484 A JP21633484 A JP 21633484A JP 21633484 A JP21633484 A JP 21633484A JP S6196439 A JPS6196439 A JP S6196439A
Authority
JP
Japan
Prior art keywords
lens
outer peripheral
beam
peripheral part
center part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21633484A
Inventor
Masanobu Hama
Youkou Shindou
Original Assignee
Toray Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Ind Inc filed Critical Toray Ind Inc
Priority to JP21633484A priority Critical patent/JPS6196439A/en
Publication of JPS6196439A publication Critical patent/JPS6196439A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0242Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0278Detecting defects of the object to be tested, e.g. scratches or dust

Abstract

PURPOSE:To coincide with the visual inspection standard of which the center part is made higher and the outer peripheral part coarser by arranging the lens enlarging the light amplitude toward the outer peripheral part side from the center part of the lens to be inspected between a scanning device system and the lens to be inspected. CONSTITUTION:The beam amplitude enlarging lens 11 enlarging the beam amplitude of a scanning means 3' toward the outer peripheral part side from the center part of the lens 5 to be inspected is arranged between the scanning device system 4 consisting of rotary polygon mirrors or the vibrating mirror scanning a laser beam 3. If there is any defect, then, the absorbed and reduced transmitted beam 6 and scattered beam 7 are detected by detectors 8, 9 respectively and the existence of defects is examined by the change in the detected quantity. The beam amplitude is accordingly made bigger as the outer peripheral part of the lens 5 to be examined and the small defect of the center part is not overlooked and the defect of the outer peripheral part is overlooked and the detecting accuracy of defects can be made higher as the center part.
JP21633484A 1984-10-17 1984-10-17 Lens defect inspecting instrument Pending JPS6196439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21633484A JPS6196439A (en) 1984-10-17 1984-10-17 Lens defect inspecting instrument

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21633484A JPS6196439A (en) 1984-10-17 1984-10-17 Lens defect inspecting instrument

Publications (1)

Publication Number Publication Date
JPS6196439A true JPS6196439A (en) 1986-05-15

Family

ID=16686910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21633484A Pending JPS6196439A (en) 1984-10-17 1984-10-17 Lens defect inspecting instrument

Country Status (1)

Country Link
JP (1) JPS6196439A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6765661B2 (en) 2001-03-09 2004-07-20 Novartis Ag Lens inspection
US7396742B2 (en) 2000-09-13 2008-07-08 Hamamatsu Photonics K.K. Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
US8889525B2 (en) 2002-03-12 2014-11-18 Hamamatsu Photonics K.K. Substrate dividing method

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8946591B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of manufacturing a semiconductor device formed using a substrate cutting method
US7396742B2 (en) 2000-09-13 2008-07-08 Hamamatsu Photonics K.K. Laser processing method for cutting a wafer-like object by using a laser to form modified regions within the object
US7547613B2 (en) 2000-09-13 2009-06-16 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7592238B2 (en) 2000-09-13 2009-09-22 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7615721B2 (en) * 2000-09-13 2009-11-10 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US7626137B2 (en) 2000-09-13 2009-12-01 Hamamatsu Photonics K.K. Laser cutting by forming a modified region within an object and generating fractures
US9837315B2 (en) 2000-09-13 2017-12-05 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8946592B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8937264B2 (en) 2000-09-13 2015-01-20 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US6765661B2 (en) 2001-03-09 2004-07-20 Novartis Ag Lens inspection
US8889525B2 (en) 2002-03-12 2014-11-18 Hamamatsu Photonics K.K. Substrate dividing method
US9142458B2 (en) 2002-03-12 2015-09-22 Hamamatsu Photonics K.K. Substrate dividing method
US9287177B2 (en) 2002-03-12 2016-03-15 Hamamatsu Photonics K.K. Substrate dividing method
US9543256B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9543207B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US9548246B2 (en) 2002-03-12 2017-01-17 Hamamatsu Photonics K.K. Substrate dividing method
US9553023B2 (en) 2002-03-12 2017-01-24 Hamamatsu Photonics K.K. Substrate dividing method
US9711405B2 (en) 2002-03-12 2017-07-18 Hamamatsu Photonics K.K. Substrate dividing method
US10068801B2 (en) 2002-03-12 2018-09-04 Hamamatsu Photonics K.K. Substrate dividing method
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate

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