JPS6178138A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6178138A
JPS6178138A JP19949284A JP19949284A JPS6178138A JP S6178138 A JPS6178138 A JP S6178138A JP 19949284 A JP19949284 A JP 19949284A JP 19949284 A JP19949284 A JP 19949284A JP S6178138 A JPS6178138 A JP S6178138A
Authority
JP
Japan
Prior art keywords
oxide film
polycrystalline silicon
substrate
performed
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19949284A
Inventor
Kazuhiro Anraku
Ikuo Kurachi
Tetsuro Yanai
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP19949284A priority Critical patent/JPS6178138A/en
Publication of JPS6178138A publication Critical patent/JPS6178138A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To raise the interlayer insulating withstand voltage by a method wherein a thermal oxidation is performed on the first polycrystalline silicon layer and the substrate at low temperatures, whereby the oxide film is formed and after the oxide film on the substrate is removed, a thermal oxidation is performed at high temperatures and the interlayer insulating film and the second gate oxide film are formed. CONSTITUTION:Field oxide films 2, a first gate oxide film 3 and a first polycrystalline silicon layer 4 are formed in order on a single crystal silicon substrate 1. Then, an etching is performed on the first polycrystalline silicon layer 4 and the first gate oxide film 3, and by performing a vapor oxidation on the surface of the substrate 1 and the first polycrystalline silicon layer 4 at low temperatures, a polycrystalline silicon oxide film 6 and an oxide film 5 are formed. Then, when an etching is performed on the oxide film 5 and the polycrystalline silicon oxide film 6 to a degree that the substrate 1 is made to expose, the polycrystalline silicon oxide film 6 remains as the oxide film 6 is thicker than the oxide film 5. After this, when a thermal oxidation is performed at high temperatures, a second gate oxide film 7 is formed on the substrate 1, and at the same time, the polycrystalline silicon oxide film 6 becomes a thicker as the first polycrystalline silicon layer 4l is oxidized through the polycrystalline silicon oxide film 6.
JP19949284A 1984-09-26 1984-09-26 Manufacture of semiconductor device Pending JPS6178138A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19949284A JPS6178138A (en) 1984-09-26 1984-09-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19949284A JPS6178138A (en) 1984-09-26 1984-09-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6178138A true JPS6178138A (en) 1986-04-21

Family

ID=16408710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19949284A Pending JPS6178138A (en) 1984-09-26 1984-09-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6178138A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7238965B2 (en) 2003-04-17 2007-07-03 Samsung Sdi Co., Ltd. Thin film transistor and method for fabricating the same with step formed at certain layer
US8493639B2 (en) 2009-12-29 2013-07-23 Brother Kogyo Kabushiki Kaisha Image recording device
US8508819B2 (en) 2010-01-29 2013-08-13 Brother Kogyo Kabushiki Kaisha Image recording device
US8768235B2 (en) 2009-12-29 2014-07-01 Brother Kogyo Kabushiki Kaisha Double-sided image recording device having a compact form factor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7238965B2 (en) 2003-04-17 2007-07-03 Samsung Sdi Co., Ltd. Thin film transistor and method for fabricating the same with step formed at certain layer
US7674659B2 (en) 2003-04-17 2010-03-09 Samsung Mobile Display Co., Ltd. Method for fabricating a thin film transistor
US8493639B2 (en) 2009-12-29 2013-07-23 Brother Kogyo Kabushiki Kaisha Image recording device
US9452619B2 (en) 2009-12-29 2016-09-27 Brother Kogyo Kabushiki Kaisha Image recording device having a compact form factor
US8768235B2 (en) 2009-12-29 2014-07-01 Brother Kogyo Kabushiki Kaisha Double-sided image recording device having a compact form factor
US9045302B2 (en) 2009-12-29 2015-06-02 Brother Kogyo Kabushiki Kaisha Image recording device having a compact form factor
US9051144B2 (en) 2009-12-29 2015-06-09 Brother Kogyo Kabushiki Kaisha Double-sided image recording device having a compact form factor
US9283778B2 (en) 2009-12-29 2016-03-15 Brother Kogyo Kabushiki Kaisha Image recording device having a compact form factor
US9440460B2 (en) 2009-12-29 2016-09-13 Brother Kogyo Kabushiki Kaisha Image recording device with a sheet feeder that contacts a duplex return guide
US10086629B2 (en) 2009-12-29 2018-10-02 Brother Kogyo Kabushiki Kaisha Image recording device having a compact form factor
US8508819B2 (en) 2010-01-29 2013-08-13 Brother Kogyo Kabushiki Kaisha Image recording device

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