JPS6178120A - Manufacture of thin film single crystal - Google Patents

Manufacture of thin film single crystal

Info

Publication number
JPS6178120A
JPS6178120A JP20015584A JP20015584A JPS6178120A JP S6178120 A JPS6178120 A JP S6178120A JP 20015584 A JP20015584 A JP 20015584A JP 20015584 A JP20015584 A JP 20015584A JP S6178120 A JPS6178120 A JP S6178120A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
single crystal
silicon layer
semiconductor
projecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20015584A
Inventor
Hisao Hayashi
Takashi Noguchi
Takefumi Ooshima
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • H01L21/02598Microstructure monocrystalline
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials

Abstract

PURPOSE:To make uniform the grain diameter of the semiconductor of a semiconductor layer by a method wherein, after grain diameter is made uniform by performing a heat treatment on the semiconductor layer in advance, the layer is fused and solidified by projecting a laser beam. CONSTITUTION:An SiO2 insulating film 2 and a polycrystalline silicon layer 3 are laminated on a substrate 1, the structure of polycrystalline is broken by ion-implanting Si<+>, the above is brought into an amorphous state, and an amorphous silicon layer 4 is obtained. Then, a heat treatment is performed, and a polycrystalline silicon layer 5, consisting of crystal grains of extremely homogeneous and having low grain boundary trap density, is formed. The crystallizability of the layer 5 is enhanced by fusing and solidifying the layer by projecting a laser beam, and a single crystal silicon layer 7, which is a semiconductor layer approximate to single crystal, is formed. The single crystal silicon layer 7 obtained by performing the above-mentioned procedures is homogeneous and have an excellent crystallizability, it is not only excellent in reproducibility and in the yield of production, but also it has a high electric characteristics.
JP20015584A 1984-09-25 1984-09-25 Manufacture of thin film single crystal Pending JPS6178120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20015584A JPS6178120A (en) 1984-09-25 1984-09-25 Manufacture of thin film single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20015584A JPS6178120A (en) 1984-09-25 1984-09-25 Manufacture of thin film single crystal

Publications (1)

Publication Number Publication Date
JPS6178120A true true JPS6178120A (en) 1986-04-21

Family

ID=16419702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20015584A Pending JPS6178120A (en) 1984-09-25 1984-09-25 Manufacture of thin film single crystal

Country Status (1)

Country Link
JP (1) JPS6178120A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104021A (en) * 1985-10-30 1987-05-14 Sony Corp Formation of silicon semiconductor layer
JPS62266819A (en) * 1986-05-14 1987-11-19 Sony Corp Formation of semiconductor thin film
JPS62277719A (en) * 1986-05-27 1987-12-02 Sharp Corp Formation of low-resistance polycrystalline silicon thin-film
JPS62287615A (en) * 1986-06-06 1987-12-14 Sony Corp Formation of polycrystalline silicon film
JPS6360518A (en) * 1986-08-30 1988-03-16 Sony Corp Growing method for crystal of semiconductor layer
JPS63151013A (en) * 1986-12-16 1988-06-23 Nec Corp Manufacture of soi substrate
JPS63151015A (en) * 1986-12-16 1988-06-23 Nec Corp Manufacture of soi substrate
JPH01286366A (en) * 1988-05-12 1989-11-17 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0745839A (en) * 1993-07-31 1995-02-14 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH0786304A (en) * 1993-06-25 1995-03-31 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JPH08107067A (en) * 1995-06-12 1996-04-23 Sony Corp Method of forming semiconductor thin film
US6319761B1 (en) 1993-06-22 2001-11-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US7470575B2 (en) 1994-06-02 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US7767559B2 (en) 1994-06-02 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104021A (en) * 1985-10-30 1987-05-14 Sony Corp Formation of silicon semiconductor layer
JPS62266819A (en) * 1986-05-14 1987-11-19 Sony Corp Formation of semiconductor thin film
JPS62277719A (en) * 1986-05-27 1987-12-02 Sharp Corp Formation of low-resistance polycrystalline silicon thin-film
JPS62287615A (en) * 1986-06-06 1987-12-14 Sony Corp Formation of polycrystalline silicon film
JPS6360518A (en) * 1986-08-30 1988-03-16 Sony Corp Growing method for crystal of semiconductor layer
JPS63151015A (en) * 1986-12-16 1988-06-23 Nec Corp Manufacture of soi substrate
JPS63151013A (en) * 1986-12-16 1988-06-23 Nec Corp Manufacture of soi substrate
JPH01286366A (en) * 1988-05-12 1989-11-17 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0824189B2 (en) * 1988-05-12 1996-03-06 三菱電機株式会社 A method of manufacturing a semiconductor device
US6319761B1 (en) 1993-06-22 2001-11-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
JPH0786304A (en) * 1993-06-25 1995-03-31 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JPH0745839A (en) * 1993-07-31 1995-02-14 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US7470575B2 (en) 1994-06-02 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US7767559B2 (en) 1994-06-02 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JPH08107067A (en) * 1995-06-12 1996-04-23 Sony Corp Method of forming semiconductor thin film

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