JPS6172654U - - Google Patents
Info
- Publication number
- JPS6172654U JPS6172654U JP15785384U JP15785384U JPS6172654U JP S6172654 U JPS6172654 U JP S6172654U JP 15785384 U JP15785384 U JP 15785384U JP 15785384 U JP15785384 U JP 15785384U JP S6172654 U JPS6172654 U JP S6172654U
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- switch according
- light
- temperature switch
- optical fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013307 optical fiber Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 2
- 229910052753 mercury Inorganic materials 0.000 claims 2
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000002457 bidirectional effect Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 238000002834 transmittance Methods 0.000 claims 1
- 229910000859 α-Fe Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 1
Description
第１図はこの考案の一実施例における温度スイ
ツチの構成を示すブロツク図、第２図は第１図の
動作特性を示す特性図、第３図はこの考案の他の
実施例として交流用の温度スイツチの要部を示す
図、第４図、第５図はこの考案の更に他の実施例
における感温部の方式の説明、第６図は従来の温
度スイツチの構成を示すブロツク図である。
図において、３は光源としてのレーザダイオー
ド、４ａ，４ｂは光フアイバ、５は感温部、６は
受光素子としての太陽電池、７は半導体スイツチ
としてのＦＥＴである。なお、各図中同一符号は
同一又は相当部分を示す。
Fig. 1 is a block diagram showing the configuration of a temperature switch in one embodiment of this invention, Fig. 2 is a characteristic diagram showing the operating characteristics of Fig. 1, and Fig. 3 is an AC temperature switch as another embodiment of this invention. Figures 4 and 5 are diagrams showing the main parts of a temperature switch, and Figures 4 and 5 are explanations of the method of the temperature sensing section in yet another embodiment of this invention. Figure 6 is a block diagram showing the configuration of a conventional temperature switch. . In the figure, 3 is a laser diode as a light source, 4a and 4b are optical fibers, 5 is a temperature sensing section, 6 is a solar cell as a light receiving element, and 7 is an FET as a semiconductor switch. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
が温度によつて変化する感温部に導き、上記感温
部を透過した光を光フアイバを介して受光素子で
受光して電気信号に変換し、上記電気信号によつ
て半導体スイツチを動作させるようにしたことを
特徴とする温度スイツチ。 (2) 感温部は光波長吸収端が温度によつて変化
するGaAs，CdTe，GaPなどの半導体であることを
特徴とする実用新案登録請求の範囲第１項記載の
温度スイツチ。 (3) 光源は波長分布に広がりを持たないレーザ
ダイオードであることを特徴とする実用新案登録
請求の範囲第２項記載の温度スイツチ。 (4) 受光素子は太陽電池であることを特徴とす
る実用新案登録請求の範囲第３項記載の温度スイ
ツチ。 (5) 半導体スイツチは太陽電池の出力電圧によ
つてスイツチング動作する電界効果形トランジス
タであることを特徴とする実用新案登録請求の範
囲第４項記載の温度スイツチ。 (6) 受光素子はフオトトランジスタ又はフオト
ダイオードであることを特徴とする実用新案登録
請求の範囲第３項記載の温度スイツチ。 (7) 半導体スイツチはフオトトランジスタ又は
フオトダイオードの出力電圧によつてスイツチン
グ動作する双方向サイリスタであることを特徴と
する実用新案登録請求の範囲第６項記載の温度ス
イツチ。 (8) 感温部は、磁石と所定温度以下では上記磁
石に吸引され上記所定温度を越えると吸引力を喪
失して落下し光フアイバの光路を遮断するフエラ
イトとからなることを特徴とする実用新案登録請
求の範囲第１項記載の温度スイツチ。 (9) 感温部は、熱膨張収縮する水銀又はアルコ
ールを収容し所定温度を越えたとき上記水銀又は
アルコールにより光フアイバの光路を遮断するよ
うに構成された温度計であることを特徴とする実
用新案登録請求の範囲第１項記載の温度スイツチ
。[Claims for Utility Model Registration] (1) Light from a light source is guided through an optical fiber to a temperature sensing part whose light transmittance changes depending on temperature, and the light transmitted through the temperature sensing part is guided through the optical fiber. 1. A temperature switch characterized in that the light is received by a light-receiving element and converted into an electric signal, and a semiconductor switch is operated by the electric signal. (2) The temperature switch according to claim 1, wherein the temperature sensing portion is a semiconductor such as GaAs, CdTe, or GaP whose optical wavelength absorption edge changes with temperature. (3) The temperature switch according to claim 2 of the utility model registration, characterized in that the light source is a laser diode with no spread in wavelength distribution. (4) The temperature switch according to claim 3 of the utility model registration, wherein the light receiving element is a solar cell. (5) The temperature switch according to claim 4, wherein the semiconductor switch is a field effect transistor that performs switching operation based on the output voltage of a solar cell. (6) The temperature switch according to claim 3, wherein the light receiving element is a phototransistor or a photodiode. (7) The temperature switch according to claim 6, wherein the semiconductor switch is a bidirectional thyristor that performs switching operation based on the output voltage of a phototransistor or a photodiode. (8) The temperature sensing part is composed of a magnet and a ferrite that is attracted to the magnet when the temperature is below a predetermined temperature and loses its attractive force and falls when the temperature exceeds the predetermined temperature, thereby blocking the optical path of the optical fiber. A temperature switch according to claim 1 of the patent registration claim. (9) The temperature sensing part is a thermometer configured to contain mercury or alcohol that expands and contracts thermally and is configured to block the optical path of the optical fiber with the mercury or alcohol when a predetermined temperature is exceeded. A temperature switch according to claim 1 of the utility model registration claim.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15785384U JPS6172654U (en) | 1984-10-18 | 1984-10-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15785384U JPS6172654U (en) | 1984-10-18 | 1984-10-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6172654U true JPS6172654U (en) | 1986-05-17 |
Family
ID=30715842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15785384U Pending JPS6172654U (en) | 1984-10-18 | 1984-10-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6172654U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010513906A (en) * | 2006-12-19 | 2010-04-30 | ヴァイブロシステム， インク． | Fiber optic temperature sensor |
| WO2017169109A1 (en) * | 2016-03-30 | 2017-10-05 | 日東電工株式会社 | Temperature sensor |
-
1984
- 1984-10-18 JP JP15785384U patent/JPS6172654U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010513906A (en) * | 2006-12-19 | 2010-04-30 | ヴァイブロシステム， インク． | Fiber optic temperature sensor |
| WO2017169109A1 (en) * | 2016-03-30 | 2017-10-05 | 日東電工株式会社 | Temperature sensor |
| US11073645B2 (en) | 2016-03-30 | 2021-07-27 | Nitto Denko Corporation | Temperature sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0155802A3 (en) | Nonlinear and bistable optical device | |
| DE3789437D1 (en) | Optical switch. | |
| KR960701529A (en) | AN OPTOELECTRIC TRANSDUCER | |
| DE69312773T2 (en) | Adjustable polarization converter | |
| FR2714982B1 (en) | Regulated optical amplifier. | |
| JPS6172654U (en) | ||
| WO2001073901A3 (en) | Linear laser driver circuit | |
| JPS5899233A (en) | Optical device for detecting switch state | |
| EP1380881A4 (en) | Optical function element and optical function device | |
| JPS6174110U (en) | ||
| JPH02189529A (en) | Optically bistable semiconductor laser device | |
| GB1167063A (en) | Improvements in or relating to Photoelectric Semiconductor Devices. | |
| JPS59117279A (en) | Semicondutor device | |
| JPS6474789A (en) | Semiconductor laser device | |
| Waters et al. | Micromechanical optoelectronic switch and amplifier (MIMOSA) | |
| JPS5311589A (en) | Diffraction grating coupling type semiconductor laser | |
| JPH0426234B2 (en) | ||
| JPS56138333A (en) | Optoelectronic switch | |
| JPS6461724A (en) | Optical isolator | |
| SU688991A1 (en) | Switching device optronic cell | |
| Berchtold | Integrated components for the optical acquisition of information | |
| JPH02127051U (en) | ||
| HIDEO | Wavelength modulation of light emitting element | |
| FR2458145A1 (en) | Thermally compensated semiconductor device - has complete monolithic structure which is suitable for FET or avalanche diode | |
| JPS5345252A (en) | Light coupler for semi-conductor laser |