JPS6155963A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6155963A
JPS6155963A JP17743784A JP17743784A JPS6155963A JP S6155963 A JPS6155963 A JP S6155963A JP 17743784 A JP17743784 A JP 17743784A JP 17743784 A JP17743784 A JP 17743784A JP S6155963 A JPS6155963 A JP S6155963A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
drain
implanted
phosphorus
source
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17743784A
Inventor
Tetsunori Wada
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode

Abstract

PURPOSE:To prevent the generation of an impact ionization phenomenon by projecting the bottom of a drain region in a MOSFET to the channel side. CONSTITUTION:A gate electrode 42 consisting of polycrystalline silicon is formed onto a gate insulating film 41 on a silicon substrate 40, and source-drain regions 43 are shaped into the substrate 40. Arsenic is implanted to form regions 51 having the same conduction type as the source-drain regions 43. Phosphorus in the source-drain 43 is thermally diffused through thermal diffusion to shape a region 61 into which phosphorus is implanted in high concentration and the same conduction type region 62 into which phosphorus is implanted in low concentration. According to such constitution, currents flow through a deep section while avoiding a strong field section just under the gate insulating film in the vicinity of the drain, thus inhibiting impact ionization.
JP17743784A 1984-08-28 1984-08-28 Semiconductor device Pending JPS6155963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17743784A JPS6155963A (en) 1984-08-28 1984-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17743784A JPS6155963A (en) 1984-08-28 1984-08-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6155963A true true JPS6155963A (en) 1986-03-20

Family

ID=16030926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17743784A Pending JPS6155963A (en) 1984-08-28 1984-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6155963A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0266127U (en) * 1988-11-08 1990-05-18
US5842249A (en) * 1992-10-31 1998-12-01 Sato; Masanori Toothbrush
US5850093A (en) * 1989-11-20 1998-12-15 Tarng; Huang Chang Uni-directional flash device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0266127U (en) * 1988-11-08 1990-05-18
JPH0525457Y2 (en) * 1988-11-08 1993-06-28
US5850093A (en) * 1989-11-20 1998-12-15 Tarng; Huang Chang Uni-directional flash device
US5842249A (en) * 1992-10-31 1998-12-01 Sato; Masanori Toothbrush
US6209164B1 (en) 1992-10-31 2001-04-03 Masanori Sato Toothbrush and electric toothbrush
US6334232B1 (en) 1992-10-31 2002-01-01 Masanori Sato Toothbrush and electric toothbrush

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