JPS6153862B2 - - Google Patents
Info
- Publication number
- JPS6153862B2 JPS6153862B2 JP52154817A JP15481777A JPS6153862B2 JP S6153862 B2 JPS6153862 B2 JP S6153862B2 JP 52154817 A JP52154817 A JP 52154817A JP 15481777 A JP15481777 A JP 15481777A JP S6153862 B2 JPS6153862 B2 JP S6153862B2
- Authority
- JP
- Japan
- Prior art keywords
- collector
- base
- polycrystalline silicon
- type
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15481777A JPS5486286A (en) | 1977-12-21 | 1977-12-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15481777A JPS5486286A (en) | 1977-12-21 | 1977-12-21 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5486286A JPS5486286A (en) | 1979-07-09 |
| JPS6153862B2 true JPS6153862B2 (enrdf_load_stackoverflow) | 1986-11-19 |
Family
ID=15592514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15481777A Granted JPS5486286A (en) | 1977-12-21 | 1977-12-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5486286A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102521433B (zh) * | 2011-11-21 | 2013-12-18 | 上海华虹Nec电子有限公司 | Pin二极管的等效电路及其参数获取方法 |
-
1977
- 1977-12-21 JP JP15481777A patent/JPS5486286A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5486286A (en) | 1979-07-09 |
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