JPS6142171A - Manufacture of nonvolatile semiconductor memory device - Google Patents

Manufacture of nonvolatile semiconductor memory device

Info

Publication number
JPS6142171A
JPS6142171A JP16367984A JP16367984A JPS6142171A JP S6142171 A JPS6142171 A JP S6142171A JP 16367984 A JP16367984 A JP 16367984A JP 16367984 A JP16367984 A JP 16367984A JP S6142171 A JPS6142171 A JP S6142171A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
gate oxide
oxide film
manufacture
memory device
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16367984A
Inventor
Masao Kiyohara
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • H01L27/115Electrically programmable read-only memories; Multistep manufacturing processes therefor
    • H01L27/11517Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
    • H01L27/11526Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the peripheral circuit region
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7884Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

Abstract

PURPOSE:To eliminate the problem of auto doping by a method wherein the film thickness is adjusted by oxidation after a gate oxide film is etched back to a required film thickness. CONSTITUTION:The first poly Si layer 42 serving as the floating gate electrode of a FAMOS is formed and then left at a memory transistor region (a). Next, in order to adjust the thickness of the gate oxide film of the peripheral circuit transistor and to prevent the auto doping from the layer 42, the gate oxide films 44 at regions (b) and (c) and the interlayer oxide film 46 of a FAMOS are formed at the same time by whole oxidation after etch-back of the gate oxide films 38 at peripheral circuit transistor regions (b) and (c).
JP16367984A 1984-08-02 1984-08-02 Manufacture of nonvolatile semiconductor memory device Pending JPS6142171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16367984A JPS6142171A (en) 1984-08-02 1984-08-02 Manufacture of nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16367984A JPS6142171A (en) 1984-08-02 1984-08-02 Manufacture of nonvolatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6142171A true true JPS6142171A (en) 1986-02-28

Family

ID=15778535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16367984A Pending JPS6142171A (en) 1984-08-02 1984-08-02 Manufacture of nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6142171A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0395084A2 (en) * 1989-04-28 1990-10-31 Kabushiki Kaisha Toshiba Method of manufacturing a logic semiconductor device having non-volatile memory
US5188976A (en) * 1990-07-13 1993-02-23 Hitachi, Ltd. Manufacturing method of non-volatile semiconductor memory device
US6329247B1 (en) 1999-08-04 2001-12-11 Nec Corporation Nonvolatile semiconductor memory device and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0395084A2 (en) * 1989-04-28 1990-10-31 Kabushiki Kaisha Toshiba Method of manufacturing a logic semiconductor device having non-volatile memory
US5158902A (en) * 1989-04-28 1992-10-27 Kabushiki Kaisha Toshiba Method of manufacturing logic semiconductor device having non-volatile memory
US5188976A (en) * 1990-07-13 1993-02-23 Hitachi, Ltd. Manufacturing method of non-volatile semiconductor memory device
US6329247B1 (en) 1999-08-04 2001-12-11 Nec Corporation Nonvolatile semiconductor memory device and manufacturing method thereof

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