JPS6142127A - イオンビ−ムの照射方法 - Google Patents

イオンビ−ムの照射方法

Info

Publication number
JPS6142127A
JPS6142127A JP16153084A JP16153084A JPS6142127A JP S6142127 A JPS6142127 A JP S6142127A JP 16153084 A JP16153084 A JP 16153084A JP 16153084 A JP16153084 A JP 16153084A JP S6142127 A JPS6142127 A JP S6142127A
Authority
JP
Japan
Prior art keywords
ion beam
groove pattern
substrate
secondary electrons
marker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16153084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0222536B2 (enrdf_load_stackoverflow
Inventor
Akira Takamori
高森　晃
Eizo Miyauchi
宮内　栄三
Tetsuo Morita
哲郎 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP16153084A priority Critical patent/JPS6142127A/ja
Publication of JPS6142127A publication Critical patent/JPS6142127A/ja
Publication of JPH0222536B2 publication Critical patent/JPH0222536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP16153084A 1984-08-02 1984-08-02 イオンビ−ムの照射方法 Granted JPS6142127A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16153084A JPS6142127A (ja) 1984-08-02 1984-08-02 イオンビ−ムの照射方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16153084A JPS6142127A (ja) 1984-08-02 1984-08-02 イオンビ−ムの照射方法

Publications (2)

Publication Number Publication Date
JPS6142127A true JPS6142127A (ja) 1986-02-28
JPH0222536B2 JPH0222536B2 (enrdf_load_stackoverflow) 1990-05-18

Family

ID=15736838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16153084A Granted JPS6142127A (ja) 1984-08-02 1984-08-02 イオンビ−ムの照射方法

Country Status (1)

Country Link
JP (1) JPS6142127A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9085660B2 (en) 2011-03-31 2015-07-21 British American Tobacco (Investments) Limited Blends of a polylactic acid and a water soluble polymer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184726A (ja) * 1982-04-22 1983-10-28 Sanyo Electric Co Ltd 電子ビ−ム露光における位置合せ方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184726A (ja) * 1982-04-22 1983-10-28 Sanyo Electric Co Ltd 電子ビ−ム露光における位置合せ方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9085660B2 (en) 2011-03-31 2015-07-21 British American Tobacco (Investments) Limited Blends of a polylactic acid and a water soluble polymer

Also Published As

Publication number Publication date
JPH0222536B2 (enrdf_load_stackoverflow) 1990-05-18

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Legal Events

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