JPS6141250Y2 - - Google Patents
Info
- Publication number
- JPS6141250Y2 JPS6141250Y2 JP1737281U JP1737281U JPS6141250Y2 JP S6141250 Y2 JPS6141250 Y2 JP S6141250Y2 JP 1737281 U JP1737281 U JP 1737281U JP 1737281 U JP1737281 U JP 1737281U JP S6141250 Y2 JPS6141250 Y2 JP S6141250Y2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- conductive path
- aluminum
- layer
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1737281U JPS6141250Y2 (enrdf_load_stackoverflow) | 1981-02-10 | 1981-02-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1737281U JPS6141250Y2 (enrdf_load_stackoverflow) | 1981-02-10 | 1981-02-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57130448U JPS57130448U (enrdf_load_stackoverflow) | 1982-08-14 |
| JPS6141250Y2 true JPS6141250Y2 (enrdf_load_stackoverflow) | 1986-11-25 |
Family
ID=29815334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1737281U Expired JPS6141250Y2 (enrdf_load_stackoverflow) | 1981-02-10 | 1981-02-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6141250Y2 (enrdf_load_stackoverflow) |
-
1981
- 1981-02-10 JP JP1737281U patent/JPS6141250Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57130448U (enrdf_load_stackoverflow) | 1982-08-14 |
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