JPS6137704B2 - - Google Patents

Info

Publication number
JPS6137704B2
JPS6137704B2 JP55104123A JP10412380A JPS6137704B2 JP S6137704 B2 JPS6137704 B2 JP S6137704B2 JP 55104123 A JP55104123 A JP 55104123A JP 10412380 A JP10412380 A JP 10412380A JP S6137704 B2 JPS6137704 B2 JP S6137704B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55104123A
Other versions
JPS5730192A (en
Inventor
Tsutomu Mezawa
Katsuhiko Kabashima
Shigeki Nozaki
Yoshihiro Takemae
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55104123A priority Critical patent/JPS6137704B2/ja
Publication of JPS5730192A publication Critical patent/JPS5730192A/ja
Publication of JPS6137704B2 publication Critical patent/JPS6137704B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4094Bit-line management or control circuits
JP55104123A 1980-07-29 1980-07-29 Expired JPS6137704B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55104123A JPS6137704B2 (ja) 1980-07-29 1980-07-29

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP55104123A JPS6137704B2 (ja) 1980-07-29 1980-07-29
US06/287,104 US4417329A (en) 1980-07-29 1981-07-27 Active pull-up circuit
EP81303456A EP0045215A3 (en) 1980-07-29 1981-07-28 Active pull-up circuit

Publications (2)

Publication Number Publication Date
JPS5730192A JPS5730192A (en) 1982-02-18
JPS6137704B2 true JPS6137704B2 (ja) 1986-08-25

Family

ID=14372341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55104123A Expired JPS6137704B2 (ja) 1980-07-29 1980-07-29

Country Status (3)

Country Link
US (1) US4417329A (ja)
EP (1) EP0045215A3 (ja)
JP (1) JPS6137704B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008269785A (ja) * 2008-07-04 2008-11-06 Renesas Technology Corp 半導体記憶装置

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172591A (en) * 1981-04-17 1982-10-23 Toshiba Corp Read-only semiconductor storage device
JPH0222472B2 (ja) * 1982-01-13 1990-05-18 Nippon Electric Co
JPS58122692A (en) * 1982-01-14 1983-07-21 Toshiba Corp Active boosting circuit
JPS58130493A (en) * 1982-01-28 1983-08-03 Toshiba Corp Active boosting circuit for mos type integrated circuit
JPS58139399A (en) * 1982-02-15 1983-08-18 Hitachi Ltd Semiconductor storage device
JPS5916195A (en) * 1982-07-19 1984-01-27 Toshiba Corp Semiconductor storage device
JPS5942693A (en) * 1982-09-01 1984-03-09 Nec Corp Sense amplifying circuit
JPH0252358B2 (ja) * 1982-12-22 1990-11-13 Fujitsu Ltd
JPS60209996A (en) * 1984-03-31 1985-10-22 Toshiba Corp Semiconductor memory
JPS60239993A (en) * 1984-05-12 1985-11-28 Sharp Corp Dynamic semiconductor memory device
JPS6122494A (en) * 1984-07-10 1986-01-31 Nec Corp Active pull-up circuit
JPS61110394A (en) * 1984-10-31 1986-05-28 Mitsubishi Electric Corp Semiconductor storage device
JPH0470716B2 (ja) * 1985-06-20 1992-11-11 Mitsubishi Electric Corp
JPS62114190A (en) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp Semiconductor storage device
JPH0810556B2 (ja) * 1986-04-17 1996-01-31 株式会社日立製作所 半導体メモリ回路
FR2600809B1 (fr) * 1986-06-24 1988-08-19 Eurotechnique Sa Dispositif de detection du fonctionnement du systeme de lecture d'une cellule-memoire eprom ou eeprom
JPH0422318B2 (ja) * 1986-12-26 1992-04-16 Tokyo Shibaura Electric Co
US5835436A (en) * 1995-07-03 1998-11-10 Mitsubishi Denki Kabushiki Kaisha Dynamic type semiconductor memory device capable of transferring data between array blocks at high speed
US5602785A (en) * 1995-12-13 1997-02-11 Micron Technology, Inc. P-channel sense amplifier pull-up circuit with a timed pulse for use in DRAM memories having non-bootstrapped word lines
US6111802A (en) * 1997-05-19 2000-08-29 Fujitsu Limited Semiconductor memory device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2634089C3 (ja) * 1975-08-11 1988-09-08 Nippon Telegraph And Telephone Corp., Tokio/Tokyo, Jp
US4081701A (en) * 1976-06-01 1978-03-28 Texas Instruments Incorporated High speed sense amplifier for MOS random access memory
DE2758106C2 (ja) * 1977-12-24 1979-12-06 Signetics Corp., Sunnyvale, Calif. (V.St.A.)
JPS6156596B2 (ja) * 1978-09-04 1986-12-03 Nippon Electric Co
US4262342A (en) * 1979-06-28 1981-04-14 Burroughs Corporation Charge restore circuit for semiconductor memories
JPS5931155B2 (ja) * 1979-10-11 1984-07-31 Intaanashonaru Bijinesu Mashiinzu Corp
US4291392A (en) * 1980-02-06 1981-09-22 Mostek Corporation Timing of active pullup for dynamic semiconductor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008269785A (ja) * 2008-07-04 2008-11-06 Renesas Technology Corp 半導体記憶装置

Also Published As

Publication number Publication date
EP0045215A3 (en) 1984-02-01
JPS5730192A (en) 1982-02-18
EP0045215A2 (en) 1982-02-03
US4417329A (en) 1983-11-22

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