JPS61279179A - Manufacture of photoelectric conversion device - Google Patents
Manufacture of photoelectric conversion deviceInfo
- Publication number
- JPS61279179A JPS61279179A JP60122152A JP12215285A JPS61279179A JP S61279179 A JPS61279179 A JP S61279179A JP 60122152 A JP60122152 A JP 60122152A JP 12215285 A JP12215285 A JP 12215285A JP S61279179 A JPS61279179 A JP S61279179A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- electrode
- photoelectric conversion
- conversion device
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 230000001590 oxidative effect Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 150000002500 ions Chemical class 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000012141 concentrate Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 4
- 239000003792 electrolyte Substances 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 description 10
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 229910003437 indium oxide Inorganic materials 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 239000008151 electrolyte solution Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
「発明の利用分野」
本発明は、光電変換装置特に大面積の光電変換装置の作
製方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a photoelectric conversion device, particularly a large-area photoelectric conversion device.
［従来技術１
従来、光電変換装置としてはＩｃｍ”または１００ｃｍ
”の小面積のＰＩＮ接合を有する非単結晶半導体が用い
られている。また４０ｃｍ Ｘ ６０ｃｍと大面積の光
電変換装置を作り、その晴位面積あたりの製造原価を下
げる試みがある。しかし、かかる光電変換装置における
光起電力を発生ずる非単結晶半導体は、プラズマＣｖｌ
′１法または光ＣＶｒｌ法で作られるため、その一部に
ピンホール、クラック等の短絡電流部（ショート）をい
くつか必ず有してしまった。そのため、大面積にする場
合、かかる短絡電流部でのショートによる変換効率の低
下を誘発し、製造歩留りが悪く、結局低価格化の成就が
困難になってしまった。[Prior art 1 Conventionally, as a photoelectric conversion device, Icm” or 100cm
A non-single-crystal semiconductor having a PIN junction with a small area of A non-single crystal semiconductor that generates photovoltaic force in a photoelectric conversion device is a plasma Cvl
Because they are manufactured using the '1 method or the optical CVrl method, they always have some short-circuit parts (short circuits) such as pinholes and cracks. Therefore, when increasing the area, a short circuit in the short-circuit current portion induces a reduction in conversion efficiency, resulting in a poor manufacturing yield and ultimately making it difficult to achieve a reduction in price.
このため、かかる大面積の光電変換装置において、電流
短絡部のみを選択的に除去する方法が求められている。Therefore, in such a large-area photoelectric conversion device, there is a need for a method of selectively removing only the current short-circuit portion.
その代表例として特開昭６０−４６０８０が示されてい
る。この発明は、ＰＴＮ接合を有する半導体上に電極を
形成し、さらにその表面をエツチング溶液に浸し、加え
て電流を流すことにより電流短絡部のみを選択的に除去
することを特徴としている。そのため使用する溶液はエ
ツチング溶液であり、その具体例がその明細書３７６頁
左上欄Ｌ９〜右下欄Ｌ１に示されている。これによると
ショートシている半導体上のＩＴＯをｉｌ ｔＲ的にエ
ツチング除去する。そのための電解液としての０．０１
〜１χの塩化水素、０．０５モルのＮａＣ１塩希釈溶液
を用いている。As a representative example, Japanese Patent Laid-Open No. 60-46080 is shown. The present invention is characterized in that an electrode is formed on a semiconductor having a PTN junction, the surface of the electrode is immersed in an etching solution, and a current is applied to selectively remove only the current short-circuit portion. The solution used for this purpose is an etching solution, specific examples of which are shown in the upper left column L9 to the lower right column L1 on page 376 of the specification. According to this method, short-circuited ITO on a semiconductor is removed by etching in an iltR manner. 0.01 as an electrolyte for that purpose
~1x hydrogen chloride, 0.05 molar NaCl salt dilute solution is used.
しかし、かかる電解液でＩＴＯおよびその下のシコート
部の半導体を除去する従来公知の方法は、他の多くの欠
点を有する。即ちこの除去された領域に対しその後の工
程において選択的に絶縁物をコートしなければならない
。However, the previously known methods of removing ITO and the underlying semiconductor of the coated portion with such electrolytes have many other drawbacks. That is, this removed area must be selectively coated with an insulator in a subsequent process.
また、裏面電極を用いない場合は、ショート箇所のみを
除去するに加えて、他のＰまたはＮ型半導体層をも若干
エツチングされてしまう。そのため、その後の工程で裏
面電極を形成せんとするとこのＰまたはＮ型半導体が十
分の厚さを４１さす、その結果、低い開放電圧しか得ら
れない場合を有する。このため、引例に示される如く、
不良箇所（ショー１・箇所）を電解溶液を用いて除去し
てしまわんとしても実用的に適用することができない。Furthermore, if a back electrode is not used, in addition to removing only the short-circuit portion, other P or N type semiconductor layers will also be slightly etched. Therefore, if a back electrode is to be formed in a subsequent step, this P or N type semiconductor may have a sufficient thickness, and as a result, only a low open circuit voltage can be obtained. For this reason, as shown in the cited example,
Even if the defective location (Show 1 location) is removed using an electrolytic solution, it cannot be practically applied.
「発明の］」的」
このため、本発明はかかる欠点を除去するためにショー
ト箇所をエツチングし除去するのでＣ３■なく、逆に選
択的に酸化して絶縁化してしまうものである。同時に他
のＮまたはＰ型半導体表面がｉπ択的に酸化されないよ
うに、その表面およびその近傍の半導体を５ｉｘＣ＋−
ｘ （０＜Ｘ＜１）または５ｉ３Ｎ４−ｘ（０＜Ｘ＜４
）とし、耐酸化防止層とたものである。さらに、本発明
において、電解溶液側の半導体例えばＮ型半導体側を酸
化用電解溶液に浸し、直流電界を加える （Ｐ型側に正
の電圧（陽極化成）を加える）ことにより、自己選択的
にショート箇所のみを酸化絶縁化するものである。Therefore, in order to eliminate such a defect, the present invention etches and removes the short-circuited portion, so that C3 is not removed, but on the contrary, it is selectively oxidized and insulated. At the same time, to prevent other N- or P-type semiconductor surfaces from being iπ selectively oxidized, the surface and nearby semiconductors are 5ixC+-
x (0<X<1) or 5i3N4-x (0<X<4
) and an anti-oxidation layer. Furthermore, in the present invention, the semiconductor on the electrolytic solution side, for example, the N-type semiconductor side, is immersed in an oxidizing electrolytic solution and a DC electric field is applied (a positive voltage (anodization) is applied to the P-type side), thereby self-selectively This oxidizes and insulates only the short-circuit area.
しかし、かかる陽極酸化法を用いる場合、このショー１
一箇所のみならず、他のＮ型半導体表面上に対してもも
しこのＮ半導体が微結晶の高い電気伝導度を有する珪素
半導体であるならば、この半導体全面に薄く酸化絶縁物
が形成されてしまう。However, when using such an anodic oxidation method, this show 1
If this N-semiconductor is a microcrystalline silicon semiconductor with high electrical conductivity, a thin oxide insulator is formed not only in one place but also on other N-type semiconductor surfaces. Put it away.
かかる工程を防ぐため、本発明における酸化液にふれる
面倒を５ｉｘ（、−ｘ （０＜Ｘ＜１）または５Ｉ３Ｎ
４−Ｘ （０＜Ｘ＜４）とし、耐酸化防止膜を有するＮ
型半導体を用いた。さらに必要ならば、この上面に金属
はどの電気伝導度を有さない、即ち、シート抵抗または
１０〜１０００Ω／口の酸化物導電膜または窒化物導電
膜例えばＩＴＯ（酸化インジューム）または窒化インジ
ューム（ＩｎＮ）を予めこの全体に形成した。その結果
、Ｎ型半導体−Ｆに酸化物が形成されているため、ここ
での酸化を防ぐことができる。またこのＩＴＯは不良導
体であるため、不良ショート箇所に対しより電流を流し
得る。そのため、ショート箇所のみを選択的に酸化させ
得る。In order to prevent such a process, the trouble of coming into contact with the oxidizing solution in the present invention can be avoided by using 5ix (, -x (0<X<1) or 5I3N
4-X (0<X<4), and N with an oxidation-resistant film
type semiconductor was used. Furthermore, if necessary, the metal on this top surface does not have any electrical conductivity, i.e. sheet resistance or an oxide conductive film or nitride conductive film of 10-1000 Ω/hole, such as ITO (indium oxide) or indium nitride. (InN) was previously formed on the entire surface. As a result, since an oxide is formed on the N-type semiconductor -F, oxidation here can be prevented. Furthermore, since this ITO is a defective conductor, more current can flow to defective short-circuit locations. Therefore, only short-circuit locations can be selectively oxidized.
かくしてＰＩＮ接合を有する非単結晶半導体上に不良導
体電極を形成し、これを陽極酸化せしめることにより、
ショート箇所のみを選択的に絶縁化させることができた
。Thus, by forming a defective conductor electrode on a non-single crystal semiconductor having a PIN junction and anodizing it,
We were able to selectively insulate only the shorted areas.
しかしこのままでは太陽電池ととしての裏面電極の電気
伝導度が十分でない。またこの裏面電極をＴＴＯのみと
するならば、光電変換装置として動作させた時、長波長
光はそのまま裏面側より外部に放出されてしまう。かか
る欠点を防ぐため、このＩＴＯの上面にさらに金属電極
例えばアルミニューム、クロム、銀または銅を主成分と
した金属を導体電極として形成した。かかる金属電極は
゛裏面電極としてのシート抵抗を下げ、また半導体内へ
の光閉じ込めを助長させる。また前記したＩＴＯにより
裏面電極の金属例えばアルミニュームとＮ型半導体との
酸化反応を防ぐことができる等、それぞれが互いにその
特長を補完できる。However, as it is, the electrical conductivity of the back electrode as a solar cell is not sufficient. Furthermore, if this back electrode is made of only TTO, when operated as a photoelectric conversion device, long wavelength light will be directly emitted to the outside from the back surface side. In order to prevent such defects, a metal electrode such as a metal mainly composed of aluminum, chromium, silver, or copper was further formed as a conductor electrode on the upper surface of this ITO. Such a metal electrode lowers the sheet resistance as a back electrode and also promotes light confinement within the semiconductor. Further, the aforementioned ITO can prevent the oxidation reaction between the metal of the back electrode, such as aluminum, and the N-type semiconductor, and each can complement each other's features.
さらに重要なことは、この金属電極を全面に形成した場
合、先に生じていたショート箇所は酸化により絶縁物化
し、そこには酸化物が充填されているため、このちとの
短絡電流部で金属が表面の導電性電極とショートするこ
とを防いでいる。What is more important is that when this metal electrode is formed over the entire surface, the short-circuit area that previously occurred becomes an insulator due to oxidation, and since it is filled with oxide, the short-circuit current area after this becomes an insulator. This prevents short-circuiting with the conductive electrode on the surface.
以下に図面に従って本発明を示す。The present invention will be illustrated below according to the drawings.
実施例１
第１図（Ａ）は本発明の光電変換装置を陽極化成せしめ
る概要を示す。Example 1 FIG. 1(A) shows an outline of anodizing the photoelectric conversion device of the present invention.
図面において、ガラス基板（１）、酸化スズの透光性導
電膜（２）、Ｐ型Ｓｉｘ自−Ｘ（０＜Ｘ＜１）非単結晶
半導体（３）（約２００人）、Ｉ型珪素非単結晶半導体
（４）（約０．６μ）、Ｎ型徽結晶珪素半導体（５００
人）さらにその上に他のＮ型窒化珪素（Ｓｉ、Ｎ４．、
□、 （０＜Ｘ＜４））または炭化珪素（ＳｉｘＣ４−
ｘ （０＜Ｘ４））半導体（５）（約２００人）、ＩＴ
Ｏ（６）よりなっている。図面では上下面を省略しであ
る。この半導体（７）中に電流短絡箇所（ショート箇所
）（８）を有する。In the drawing, a glass substrate (1), a transparent conductive film of tin oxide (2), a P-type Six auto-X (0<X<1) non-single crystal semiconductor (3) (approximately 200 people), and an I-type silicon Non-single crystal semiconductor (4) (approximately 0.6μ), N-type crystalline silicon semiconductor (500μ)
Furthermore, other N-type silicon nitride (Si, N4.,
□, (0<X<4)) or silicon carbide (SixC4-
x (0<X4)) Semiconductor (5) (approx. 200 people), IT
It consists of O(6). In the drawing, the top and bottom surfaces are omitted. This semiconductor (7) has a current short circuit point (8).
この光電変換装置と他方の電極（白金を使用）（１２）
との間に電解溶液（１４）を充填した。この溶液は半導
体を酸化するためＯ−イオンを発生することが望ましい
。このため、ｌＯ〜１５χの濃度にテトラヒドロフルヒ
ルアルコールで希釈した過酸化水素、硝酸またはリン酸
を用いた。This photoelectric conversion device and the other electrode (using platinum) (12)
An electrolyte solution (14) was filled between the two. This solution preferably generates O- ions to oxidize the semiconductor. For this purpose, hydrogen peroxide, nitric acid or phosphoric acid diluted with tetrahydrofurhylic alcohol to a concentration of 10 to 15x was used.
そして半導体側を正電極（陽極）（２）、白金側を負電
極（陰極） （１３）として、この間に５０Ｖの直流電
圧を加えた。すると初期状態において電流密度３ｍＡ／
（、ｍ２を有したが、次第に流れる電流密度が減少し、
約１（）分にて０．０３ｍＡ／ｃｍ”までなった。この
ことにより、ショート箇所が時間とともに酸化して絶縁
化したものと推定される。Then, the semiconductor side was used as a positive electrode (anode) (2), and the platinum side was used as a negative electrode (cathode) (13), and a DC voltage of 50 V was applied between them. Then, in the initial state, the current density is 3 mA/
(, m2, but the current density gradually decreases,
The voltage decreased to 0.03 mA/cm'' in about 1 () minutes.It is presumed that the short-circuited portion oxidized and became insulated over time.
この後、この基板を水にて水洗し、残留イオン成分を除
去した。さらに大気中１５０°Ｃに保持し、乾燥後、裏
面電極としてのアルミニューム（９）を０．２μの厚さ
に形成し、第１図（Ｒ）を得た。Thereafter, this substrate was washed with water to remove residual ionic components. Further, the substrate was kept at 150° C. in the atmosphere, and after drying, aluminum (9) was formed as a back electrode to a thickness of 0.2 μm to obtain FIG. 1 (R).
かくすると、従来公知の陽極酸化プロセスをまったく用
いずに、裏面の電極としてＩＴＯ（６） 、アルミニュ
ーム（９）を設は得る光電変換装置においては、入射光
（２０）をＡ旧（１００ｍＷ／ｃｍ２）とした時、その
変換効率は１０ｃｍ口にて初期状態においては３〜９χ
にまでばらついてしまい、特に曲線因子の低下が著しい
。In this way, in a photoelectric conversion device in which ITO (6) and aluminum (9) can be installed as back electrodes without using any conventionally known anodic oxidation process, the incident light (20) can be converted to A (100 mW/ cm2), the conversion efficiency is 3 to 9χ in the initial state at a 10cm opening.
In particular, the decrease in fill factor is remarkable.
しかし本発明を用いた第２図の構成においては、その特
性において低い変換効率の試料がなくなり、はとんどの
試料が８〜９χとほぼ一定の値を有せしめ得ることがで
きた。However, in the configuration shown in FIG. 2 using the present invention, there were no samples with low conversion efficiency in terms of characteristics, and most of the samples were able to have a substantially constant value of 8 to 9χ.
「効果」
以上の説明より明らかなごとく、本発明は大面積の光電
変換装置において、特にガラス基板」−のＰＩＮ接合（
Ｐ型半導体がガラス側）の自己バイヤス性を利用し、自
己選択的にショート箇所を酸化して絶縁化したものであ
る。しかし、単にＮＩＰ接合（Ｎ型半導体がガラス側）
であっても、本発明を適用することが可能である。そし
てかかるＮＩＰ接合またはＰＩＮ接合の半導体における
酸化溶液に接する側のＰまたはＮ型半導体を耐酸化性の
炭化珪素または窒化珪素で構成せしめるならば、ここで
のブロッキングにより絶縁性酸化物が作られていること
がない。またこの炭化珪素または窒化珪素は珪素のみの
場合に比べて、大きいエネルギバンド中を有するため、
光の透光性に優れ、耐酸化性のみならず、変換効率の向
上にも有効である。さらに裏面電極を形成した後におい
ても、長期間使用に対しても、半導体と電極との反応が
シリコンのみの場合に比べてされにり＜、高信軌性をも
期待し得る。"Effects" As is clear from the above explanation, the present invention is particularly useful for large-area photoelectric conversion devices, especially PIN junctions (
Utilizing the self-bias property of the P-type semiconductor (on the glass side), short-circuit locations are self-selectively oxidized and insulated. However, simply NIP junction (N-type semiconductor is on the glass side)
The present invention can be applied even if If the P or N type semiconductor on the side in contact with the oxidizing solution in the semiconductor of such an NIP junction or PIN junction is made of oxidation-resistant silicon carbide or silicon nitride, an insulating oxide is created by blocking here. I'm never there. Also, since silicon carbide or silicon nitride has a larger energy band than silicon alone,
It has excellent light transmittance and is effective not only in improving oxidation resistance but also in improving conversion efficiency. Furthermore, even after forming the back electrode, even after long-term use, the reaction between the semiconductor and the electrode is stronger than in the case of only silicon, and high reliability can be expected.
その結果、大面積であっても、高い変換効率を得ること
ができた。As a result, high conversion efficiency could be obtained even with a large area.
本発明の実施例は液体を用いた陽極酸化を記した。しか
しこの陽極酸化を気体、特に酸素プラズマイオンを用い
る気相陽極酸化方法にて行っても同様である。Examples of the present invention describe anodization using a liquid. However, the same effect can be obtained even if this anodic oxidation is performed using a gas, particularly a gas phase anodic oxidation method using oxygen plasma ions.
第１図は本発明を実施するための光電変換装置の縦断面
図である。FIG. 1 is a longitudinal sectional view of a photoelectric conversion device for implementing the present invention.
Claims (1)
つ有する非単結晶半導体と、該半導体上のＰまたはＮ型
半導体の表面またはその近傍にはＳｉ＿ＸＣ＿１＿−＿
Ｘ（０＜Ｘ＜１）またはＳｉ＿３Ｎ＿４＿−＿Ｘ（０＜
Ｘ＜４）が設けられるとともに、前記１型半導体には短
絡電流部を少なくとも１つ有する光電変換装置を酸化性
溶液に浸漬し、前記短絡電流部を選択的に酸化して絶縁
化せしめたことを特徴とする光電変換装置の作製方法。 ２、特許請求の範囲第１項において、選択的に酸化処理
する工程として、前記Ｐ型半導体を陽極として連結する
ことによりイオン化した酸素または酸化物イオンを電流
短絡部に集中せしめ、該部を選択的に酸化せしめること
を特徴とする光電変換装置の作製方法。[Claims] 1. At least one PIN junction on one electrode on the substrate
Si_XC_1_-_ on the surface of or near the P- or N-type semiconductor on the semiconductor
X (0<X<1) or Si_3N_4_-_X(0<
X < 4), and the photoelectric conversion device having at least one short circuit current portion in the type 1 semiconductor is immersed in an oxidizing solution, and the short circuit current portion is selectively oxidized to be insulated. A method for manufacturing a photoelectric conversion device characterized by: 2. In claim 1, the step of selectively oxidizing the P-type semiconductor by connecting the P-type semiconductor as an anode concentrates ionized oxygen or oxide ions on a current short circuit part, and selects the part. 1. A method for manufacturing a photoelectric conversion device, which comprises oxidizing the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60122152A JPS61279179A (en) | 1985-06-04 | 1985-06-04 | Manufacture of photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60122152A JPS61279179A (en) | 1985-06-04 | 1985-06-04 | Manufacture of photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61279179A true JPS61279179A (en) | 1986-12-09 |
Family
ID=14828890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60122152A Pending JPS61279179A (en) | 1985-06-04 | 1985-06-04 | Manufacture of photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61279179A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58192387A (en) * | 1982-04-27 | 1983-11-09 | ア−ルシ−エ− コ−ポレ−シヨン | Photocell |
| JPS6085578A (en) * | 1983-10-17 | 1985-05-15 | Fuji Xerox Co Ltd | Manufacture of thin film photoelectric conversion element |
-
1985
- 1985-06-04 JP JP60122152A patent/JPS61279179A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58192387A (en) * | 1982-04-27 | 1983-11-09 | ア−ルシ−エ− コ−ポレ−シヨン | Photocell |
| JPS6085578A (en) * | 1983-10-17 | 1985-05-15 | Fuji Xerox Co Ltd | Manufacture of thin film photoelectric conversion element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3809237B2 (en) | Electrolytic pattern etching method | |
| US7638707B2 (en) | Photovoltaic cell, photovoltaic cell module, method of fabricating photovoltaic cell and method of repairing photovoltaic cell | |
| US5268037A (en) | Monolithic, parallel connected photovoltaic array and method for its manufacture | |
| US6426235B1 (en) | Method of manufacturing semiconductor device | |
| US7517465B2 (en) | Ultra lightweight photovoltaic device and method for its manufacture | |
| EP0268272A2 (en) | Method of removing electrical shorts and shunts from a thin-film semiconductor device | |
| AU2015236207B2 (en) | Conversion of metal seed layer for buffer material | |
| JPH0473306B2 (en) | ||
| US5055416A (en) | Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces | |
| US3271198A (en) | Electrolytic semiconductor photocell | |
| JPS61279179A (en) | Manufacture of photoelectric conversion device | |
| TW201411866A (en) | Passivation local diffusion structure of solar cell rear and the manufacturing method thereof | |
| JPS61279178A (en) | Manufacture of photoelectric conversion device | |
| JPS62213282A (en) | Method for avoiding short circuit when amorphous silicon thin film solar battery is produced | |
| JPS61279180A (en) | Manufacture of photoelectric conversion device | |
| JPS61199672A (en) | Photovoltaic device | |
| JP5978464B2 (en) | Method for manufacturing solar cell element | |
| JPH077168A (en) | Photoeletcric conversion semiconductor device | |
| JPH0137860B2 (en) | ||
| JPS59110175A (en) | Manufacture of solar battery | |
| JPH06310742A (en) | Fabrication of photovoltaic element | |
| JPH06112514A (en) | Manufacture of photoelectric conversion semiconductor device | |
| JPH0554274B2 (en) | ||
| JP4458697B2 (en) | Photovoltaic device manufacturing method | |
| JP3237125B2 (en) | Anodizing method for conductive film |