JPS61278186A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS61278186A
JPS61278186A JP11875285A JP11875285A JPS61278186A JP S61278186 A JPS61278186 A JP S61278186A JP 11875285 A JP11875285 A JP 11875285A JP 11875285 A JP11875285 A JP 11875285A JP S61278186 A JPS61278186 A JP S61278186A
Authority
JP
Japan
Prior art keywords
layer
thickness
semiconductor laser
multiple quantum
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11875285A
Inventor
Naoki Kayane
Shinichi Nakatsuka
Yuichi Ono
So Otoshi
Kazuhisa Uomi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11875285A priority Critical patent/JPS61278186A/en
Publication of JPS61278186A publication Critical patent/JPS61278186A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To obtain the semiconductor laser device of high output and high reliability by satisfying specified conditions of thickness of a multiple quantum well active layer.
CONSTITUTION: A semiconductor laser device comprising a multiple quantum well active layer which is composed by laminating a well layer having a thickness LW which is de Bloglie wavelength of electrons or under that and a barrier layer of thickness LB which has a wider forbidden band than that of the well layer alternately, wherein the thickness of the multiple quantum well active layer NWLW+NBLB (NW: number of well layer, NB: number of barrier layer) satisfies the condition 25nm<NWLW+NBLB<50nm. Consequently, the high output of 100mW or more of stable mode becomes possible for one laser stripe and the semiconductor device having high reliability can be fabricated easily.
COPYRIGHT: (C)1986,JPO&Japio
JP11875285A 1985-06-03 1985-06-03 Semiconductor laser device Pending JPS61278186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11875285A JPS61278186A (en) 1985-06-03 1985-06-03 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11875285A JPS61278186A (en) 1985-06-03 1985-06-03 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS61278186A true JPS61278186A (en) 1986-12-09

Family

ID=14744177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11875285A Pending JPS61278186A (en) 1985-06-03 1985-06-03 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS61278186A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181086A (en) * 1990-05-17 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Strained superlattice semiconductor structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045084A (en) * 1983-08-22 1985-03-11 Nec Corp Distributed feedback type semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045084A (en) * 1983-08-22 1985-03-11 Nec Corp Distributed feedback type semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181086A (en) * 1990-05-17 1993-01-19 Mitsubishi Denki Kabushiki Kaisha Strained superlattice semiconductor structure

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