JPS6127659A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6127659A
JPS6127659A JP14891084A JP14891084A JPS6127659A JP S6127659 A JPS6127659 A JP S6127659A JP 14891084 A JP14891084 A JP 14891084A JP 14891084 A JP14891084 A JP 14891084A JP S6127659 A JPS6127659 A JP S6127659A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wiring
formed
aluminum
layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14891084A
Inventor
Kazuo Adachi
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Abstract

PURPOSE:To protect a lower wiring from etchant-caused corrosion even in the presence of cracks in an interlayer insulating film by a method wherein an oxide film of the wiring material is formed to cover the surface of a first-layer wiring in a multilayer wiring structure and a second-layer wiring is formed with the intermediary of an insulating film formed by vapor phase growth. CONSTITUTION:A first-layer aluminum wiring 3 is formed by photoetching on top of an oxide film 2 formed on a semiconcudtor substrate 1, to be next covered by an aluminum oxide film 4 formed by anodizing. An interlayer insulating film 5 is formed by vapor phase growth, to be provided with a through-hole 6. A second-layer aluminum wiring 7 is formed by photoetching. It does not happen for the etchant, used in the patterning of the second-layer aluminum wiring 7 and allowed to fill a crack which may be created in the interlayer insulating film 5, to attack the first-layer aluminum wiring 3 because the first-layer aluminum wiring 3 is protected by an aluminum oxide.
JP14891084A 1984-07-18 1984-07-18 Semiconductor device Pending JPS6127659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14891084A JPS6127659A (en) 1984-07-18 1984-07-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14891084A JPS6127659A (en) 1984-07-18 1984-07-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6127659A true true JPS6127659A (en) 1986-02-07

Family

ID=15463391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14891084A Pending JPS6127659A (en) 1984-07-18 1984-07-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6127659A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures

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