JPS61270875A - Buried zener diode - Google Patents
Buried zener diodeInfo
- Publication number
- JPS61270875A JPS61270875A JP11161085A JP11161085A JPS61270875A JP S61270875 A JPS61270875 A JP S61270875A JP 11161085 A JP11161085 A JP 11161085A JP 11161085 A JP11161085 A JP 11161085A JP S61270875 A JPS61270875 A JP S61270875A
- Authority
- JP
- Japan
- Prior art keywords
- region
- anode
- buried
- zener diode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 15
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- 238000000605 extraction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
不発Ｆ！Ａｈｖンア集積回路に用いられるツヱナーダイ
オード％特Ｋｍ込ツェナーダイオードに関するものであ
る。[Detailed description of the invention] [Industrial application field] Misfire F! This invention relates to a Zener diode used in an integrated circuit.
第２図に従来用いられてきた埋込ツェナーダイオードの
製造方法を示す。Ｐ型半導体基板２０１にＮ 埋込層２
０２．Ｐ 埋込層２０３を形成後Ｎ−エピタキシャル
層２０４を成長させるＯＮ−エピタキシャル層２０４表
面に酸化膜２０５を形成し、一部開口して拡散窓２０６
．２０７を設け、この窓を通して高不純物濃度のボロン
を拡散する（同図１ａ） ） ｏ高温から長時間の熱処
゛理により拡散窓２０６，２０７より拡散したボロンは
Ｐ 埋込層２０３迄達し、それぞれアノード領域２０８
，アノード取り出し領域２０９となる（四回（ｂ））。FIG. 2 shows a conventional method for manufacturing a buried Zener diode. N buried layer 2 in P type semiconductor substrate 201
02. After forming the P buried layer 203, the N-epitaxial layer 204 is grown. An oxide film 205 is formed on the surface of the ON-epitaxial layer 204, and a portion is opened to form a diffusion window 206.
．． 207 is provided, and boron with a high impurity concentration is diffused through this window (FIG. 1a)) o Boron diffused through the diffusion windows 206 and 207 by long-term heat treatment at high temperature reaches the P buried layer 203. anode area 208 respectively
, becomes the anode extraction region 209 (fourth time (b)).
更にアノード領域２０８の表面を包括すべくＮ 型のカ
ソード領域２１０を形成する（同図（Ｃ））。Further, an N-type cathode region 210 is formed to cover the surface of the anode region 208 (FIG. 2(C)).
上述した従来の埋込ツェナーダイオードは第２図（ｃｌ
に示す様に太線で示す接合面でブレークダウンを生じる
。しかしこの接合面のボロン濃度は第２図（ａ）で示す
拡散窓２０６にテボジソトされたボロンがソースとして
等方拡散したものであるため拡散層２０６直下のボロン
濃度は高いがそこから離れるに従ってボロン濃度は低く
なる。この為、このツェナーの電流−電圧特性はツェナ
ーと直列抵抗の分布定数的表税から得られると考えられ
るが、これを集中定数的表現で表わすと第３図の様な等
価回路となる。従って、拡散Ｎ２０６直下のツェナー３
２０降伏電圧が最も低く、そこから離れるに従い高くな
っていき、この領域でのツゴナー３３０の降伏電圧の上
昇が全体としてのツェナーの電流−電圧特性の直列抵抗
成分の増大につなかつでいた。The conventional buried Zener diode mentioned above is shown in FIG.
As shown in Figure 2, breakdown occurs at the joint surface indicated by the thick line. However, the boron concentration at this junction surface is the result of isotropic diffusion of boron that has been injected into the diffusion window 206 shown in FIG. The concentration will be lower. Therefore, it is thought that the current-voltage characteristics of this Zener can be obtained from the distributed constant representation of the Zener and the series resistor, but if this is expressed in terms of lumped constants, an equivalent circuit as shown in FIG. 3 is obtained. Therefore, Zener 3 directly below the diffusion N206
The breakdown voltage of the Zener 330 is the lowest, and increases as the distance from there increases, and the increase in the breakdown voltage of the Zener 330 in this region leads to an increase in the series resistance component of the current-voltage characteristics of the Zener as a whole.
本発明による埋込ツェナーダイオードは一導電娶の半導
体基板、該半導体基板上に形成された反対！電型のエピ
タキシャル層、該エピタキシャル層に離間して形成され
かつ一導を型領域にて前記エピタキシャル層表面下で連
結される手段を有したー導を型のアノード領域とアノー
ド取り出し領域、該アノード取り出し領域から離間し前
記アノード領域表面を包括する形で形成された反対導電
型で高不純物濃度を有するカソード領域、該カソード領
域より深く形成され前記カソード領域に包括され前記ア
ノード領域を包括すべく形状に形成された一導電型のア
ノード補助領域とから成ることを％徴とする。A buried Zener diode according to the present invention is formed on a semiconductor substrate of one conductive type, and the opposite side is formed on the semiconductor substrate. an epitaxial layer of a conductive type, formed at a distance in the epitaxial layer and having means for connecting a conductive conductor under the surface of the epitaxial layer in a mold region; an anode region of the mold and an anode extraction region; a cathode region having a high impurity concentration and of an opposite conductivity type, formed to be spaced apart from the extraction region and encompassing the surface of the anode region; a cathode region formed deeper than the cathode region and shaped to encompass the anode region; and an anode auxiliary region of one conductivity type formed in %.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
Ｐ型半導体基板１０１にＮ 埋込層１０２ 、 Ｐ”埋
込層１０３を形成後、Ｎ−エピタキシャル層１０４を成
長させる。Ｎ−エピタキシャル層１０４表面に酸化膜１
０５を形成し、一部開口して拡散窓１０６，１０７を設
け、この窓を通して高不純物濃度のボロンを拡散する（
同図（ａ））。高温長時間の熱処理により拡散窓１０６
，１０７より拡散したボロンはＰ 埋込層１０３迄達し
、七れぞれアノード領域１０８．アノード取り出し領域
１０９となる（同図（ｂ））。ここで表面から１〜２μ
ｍの間のボロン濃度を補うためにアノード領域１０８の
内側に位置する様アノード補助領域１１１を深さ約３μ
ｍに形成する（同図（Ｃ））。最後にアノード領域１０
８の表面を包括すべくＮ 呈のカソード領域１１０を約
１．５μｍの深さに形成する（同図（ｄ））。After forming an N buried layer 102 and a P'' buried layer 103 on a P type semiconductor substrate 101, an N-epitaxial layer 104 is grown.An oxide film 1 is formed on the surface of the N-epitaxial layer 104.
05 is partially opened to provide diffusion windows 106 and 107, and boron with a high impurity concentration is diffused through these windows (
Figure (a)). Diffusion window 106 is formed by heat treatment at high temperature and for a long time.
, 107 reaches the P buried layer 103, and the anode regions 108., 107, respectively. This becomes an anode extraction area 109 (FIG. 2(b)). Here, 1 to 2μ from the surface
The anode auxiliary region 111 is located inside the anode region 108 to a depth of approximately 3 μm to compensate for the boron concentration between
m (Figure (C)). Finally, anode area 10
A cathode region 110 of N 2 is formed to a depth of about 1.5 μm to cover the surface of the substrate 8 (FIG. 8(d)).
以上説明したように本発明は埋込ツェナーダイオードの
アノード領域の表面付近のボロン濃度をボロン拡散を追
加することＫより一律に上けてやることができる。これ
は拡散窓１０６ｉＮ下から離れた接合でのブレークダウ
ン電圧を拡散窓１０６直下のそれに近づける（低くする
）効果かあシ、全体として埋込ツェナーダイオードの直
列抵抗を下げる役割を来たすことができる。尚、上記追
加。As explained above, the present invention can uniformly increase the boron concentration near the surface of the anode region of a buried Zener diode compared to K by adding boron diffusion. This has the effect of bringing the breakdown voltage at a junction remote from under the diffusion window 106iN closer to (lower) that directly under the diffusion window 106, and can serve to lower the series resistance of the buried Zener diode as a whole. In addition, the above addition.
したボロン拡散は従来のベース拡散でもよく工程の増加
にはならない。Conventional base diffusion can be used for boron diffusion without increasing the number of steps.
第１図は不発シ」の埋込ツェナーダイオードの製造フロ
ー従った継面図、第２図は従来の埋込ツェナーダイオー
ドの製造フローに従った継面図、第３図は従来の埋込ツ
ェナーダイオードの等価回路を集中定数的にモテル化し
て表現した図である。
１０１．１０１・・・・・・Ｐ型半導体基板、１０２，
２０２・・・・・・Ｎ 埋込層、１０３．２０３・・・
・・・Ｐ 埋込層、２０４．２０４・・・・・・Ｎ エ
ピタキシャル層、１０５゜２０５・・・・・・酸化膜、
１０６，２０６・・・・・・アノード拡散窓、１０７，
２０７・・・・・・アノード取り出し領域拡散窓、１０
８ 、２０８・・・・・・アノード領域、１０９゜２０
９・・・・・・アノード取り出し領域、１１０，２１０
・・・・・・カソード領域、１１１・・・・・・アノ−
ド補助領域、３２０・・・・・・低いブレークダウン電
圧を有するツェナーダイオード、３３０・・・・・・３
２０より高いブレークダウン電圧を有するツェナーダイ
オード。
憂 ｌ 図
第 ２ 図Figure 1 is a cross-sectional view of a conventional buried Zener diode according to the manufacturing flow, Figure 2 is a cross-sectional view of a conventional buried Zener diode, and Figure 3 is a cross-sectional view of a conventional buried Zener diode. It is a diagram expressing the equivalent circuit of a diode as a lumped constant model. 101.101...P-type semiconductor substrate, 102,
202...N buried layer, 103.203...
...P buried layer, 204.204...N epitaxial layer, 105°205... oxide film,
106, 206... Anode diffusion window, 107,
207... Anode extraction area diffusion window, 10
8, 208... Anode area, 109°20
9... Anode extraction area, 110, 210
...Cathode region, 111...Anno-
Zener diode with low breakdown voltage, 330...3
Zener diodes with breakdown voltages higher than 20. Figure 2
Claims (1)
対導電型のエピタキシャル層、該エピタキシャル層に離
間して形成されかつ一導電型領域にて前記エピタキシャ
ル層表面下で連結される手段を有した一導電型のアノー
ド領域とアノード取り出し領域、該アノード取り出し領
域から離間も前記アノード領域表面を包括する形で形成
された反対導電型で高不純物濃度を有するカソード領域
、該カソード領域より深く形成され前記カソード領域に
包括されかつ前記アノード領域を包括すべく形状に形成
された一導電型のアノード補助領域とから成ることを特
徴とする埋込ツェナーダイオード。a semiconductor substrate of one conductivity type; an epitaxial layer of an opposite conductivity type formed on the semiconductor substrate; an anode region of one conductivity type and an anode take-out region, a cathode region of the opposite conductivity type and having a high impurity concentration formed in a manner that is spaced apart from the anode take-out region and encompasses the surface of the anode region; and a cathode region formed deeper than the cathode region. and an anode auxiliary region of one conductivity type that is surrounded by the cathode region and shaped to encompass the anode region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11161085A JPS61270875A (en) | 1985-05-24 | 1985-05-24 | Buried zener diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11161085A JPS61270875A (en) | 1985-05-24 | 1985-05-24 | Buried zener diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61270875A true JPS61270875A (en) | 1986-12-01 |
Family
ID=14565699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11161085A Pending JPS61270875A (en) | 1985-05-24 | 1985-05-24 | Buried zener diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61270875A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055888A (en) * | 1989-06-21 | 1991-10-08 | Texas Instrumenets Incorporated | Zener diodes in a linear semiconductor device |
-
1985
- 1985-05-24 JP JP11161085A patent/JPS61270875A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055888A (en) * | 1989-06-21 | 1991-10-08 | Texas Instrumenets Incorporated | Zener diodes in a linear semiconductor device |
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