JPS61265609A - Transistor device with current limiter - Google Patents

Transistor device with current limiter

Info

Publication number
JPS61265609A
JPS61265609A JP10790385A JP10790385A JPS61265609A JP S61265609 A JPS61265609 A JP S61265609A JP 10790385 A JP10790385 A JP 10790385A JP 10790385 A JP10790385 A JP 10790385A JP S61265609 A JPS61265609 A JP S61265609A
Authority
JP
Japan
Prior art keywords
transistor
current
output
comparator
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10790385A
Other languages
Japanese (ja)
Other versions
JPH0628009B2 (en
Inventor
Hiroyuki Ishikawa
弘之 石川
Masaru Maruta
丸田 勝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP60107903A priority Critical patent/JPH0628009B2/en
Publication of JPS61265609A publication Critical patent/JPS61265609A/en
Publication of JPH0628009B2 publication Critical patent/JPH0628009B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To maintain a value of an output current flowing through an output transistor, at a prescribed value irrespective of an ambient temperature, by forming a circuit by an output transistor, a current detecting resistor, a comparator, a reference voltage generating circuit, a control transistor, etc. CONSTITUTION:As a current flowing to an output transistor TR0 increases, a voltage drop in a detecting resistor R0 becomes large. Accordingly, a + terminal potential of a comparator 1 becomes higher than a - terminal potential, an output of the comparator 1 becomes a high potential, and a control transistor TR1 is turned on. Therefore, a conducting current is controlled to a prescribed value by decreasing a base current of the transistor TR0. Also, since a temperature characteristic of the resistor R0 and a reference voltage generating circuit 2 is very small, this prescribed current is maintained irrespective of an ambient temperature.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 この発明は出力トランジスタの出力電流値を一定値に制
限する電流制限付トランジスタ装置の回路構成に関する
DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a circuit configuration of a current-limiting transistor device that limits the output current value of an output transistor to a constant value.

〔従来技術とその問題点〕[Prior art and its problems]

この種のトランジスタ装置としては第3図iこ示すよう
な回路構成のものが知られている。この回路では、出力
トランジスタTRoに流れる電流■cを電流検出抵抗体
Roで検出し、所定のIC電流値以上になったときに、
固定抵抗体R1を通して制御トランジスタTR,を導通
し、出力トランジスタTR,のベース電流を一定値に制
限する。その結果として電流■cを一定値に制限するこ
とができる。
As this type of transistor device, one having a circuit configuration as shown in FIG. 3I is known. In this circuit, the current c flowing through the output transistor TRo is detected by the current detection resistor Ro, and when the current exceeds a predetermined IC current value,
The control transistor TR is made conductive through the fixed resistor R1, and the base current of the output transistor TR is limited to a constant value. As a result, the current ■c can be limited to a constant value.

可変抵抗体R2を調整することにより■cを任意の電流
値に設定することができる。しかしながらこの回路では
第4図に示すように一定に制限しようとする電流値が温
度により変化するという欠点があった。これは高温にな
ると制御トランジスタT R1のベース・エミ、り間は
室温に比較し低い電圧すなわち電流検出抵抗体Roでの
低い電圧降下で導通するためである。
By adjusting the variable resistor R2, c can be set to any current value. However, this circuit has the drawback that the current value, which is intended to be limited to a constant value, changes depending on the temperature, as shown in FIG. This is because at high temperatures, the voltage between the base and emitter of the control transistor TR1 becomes conductive compared to room temperature, that is, with a low voltage drop across the current detection resistor Ro.

〔発明の目的〕[Purpose of the invention]

この発明は前述した欠点を除去し、周囲温度に無関係に
常に一定値の出力電流が得られる電流制限トランジスタ
装置を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks and to provide a current-limiting transistor device that can always provide a constant output current regardless of the ambient temperature.

〔発明の要点〕[Key points of the invention]

この発明では上記の目的のため、出力トランジスタ、%
流検出抵抗体、比較器、基準電圧発生回路、制御トラン
ジスタ、固定抵抗体および可変抵抗体を組合わせで3端
子回路を構成し、出力トランジスタと厘列農就されてい
る電流検出抵抗体により出力トランジスタの′電流値を
検出し、これより得られる検出電圧2よび基準電圧を比
較器の入力側に接続し、比■咬器の出力により出力トラ
ンジスタのベース電位を所定値に制御するようにした。
In this invention, for the above purpose, the output transistor, %
A three-terminal circuit is constructed by combining a current detection resistor, a comparator, a reference voltage generation circuit, a control transistor, a fixed resistor, and a variable resistor, and the output is output by the current detection resistor connected in parallel with the output transistor. The current value of the transistor is detected, the detected voltage 2 obtained from this and the reference voltage are connected to the input side of the comparator, and the base potential of the output transistor is controlled to a predetermined value by the output of the ratio converter. .

また基準電圧発生回路および比較器の電源は出力トラン
ジスタのベースからとるようにした。
Further, the power supply for the reference voltage generation circuit and the comparator is taken from the base of the output transistor.

〔発明の実施例〕[Embodiments of the invention]

以下この発明の実施例を図面に基づいて説明する。第1
図はこの発明の実施例を示すもので、出力トランジスタ
TRoの端子10は図示しない負荷および図示しない電
源のプラス側に接続され、出力トランジスタTRoのベ
ース端子間はベース負荷および電源のプラス側に接続さ
れる0また端子間は電源のマイナス側端子に接続される
。出力トランジスタTRoのエミッタは電流検出抵抗体
Roの一端に接続され、抵抗体R,の他端は端子九に接
続されている。また抵抗体R,には固定抵抗体R1と可
変抵抗体R2からなる直列回路が並列接続されており、
この可変抵抗体R2を調整して制限電流値を設定する。
Embodiments of the present invention will be described below based on the drawings. 1st
The figure shows an embodiment of the present invention, in which the terminal 10 of the output transistor TRo is connected to a load (not shown) and the positive side of a power source (not shown), and the base terminals of the output transistor TRo are connected to the base load and the positive side of the power source (not shown). The 0 and 0 terminals connected to each other are connected to the negative terminal of the power supply. The emitter of the output transistor TRo is connected to one end of a current detection resistor Ro, and the other end of the resistor R is connected to terminal 9. Furthermore, a series circuit consisting of a fixed resistor R1 and a variable resistor R2 is connected in parallel to the resistor R.
This variable resistor R2 is adjusted to set a limiting current value.

固定抵抗体R1と可変抵抗体R2の接続点は比較器1の
プラス側入力端子に接続され、この比較器1の電源は出
力トランジスタTR,のベース端子間より供給される。
The connection point between the fixed resistor R1 and the variable resistor R2 is connected to the positive input terminal of the comparator 1, and power to the comparator 1 is supplied from between the base terminals of the output transistor TR.

同時に端子間を電源とし基準電圧発生回路2の出力を比
較器1のマイナス側入力端子に接続し、比較器1の出力
端子を制限トランジスタTR,のベースに接続量る。出
力トランジスタTRo&C流れる電流の増大に伴い検出
抵抗体Roでの電圧降下が大きくなって比較器1のプラ
ス側端子の電位がマイナス側端子の電位より高(なり、
比較器1の出力が高電位となって制限トランジスタTR
1がONするため、出力トランジスタTRoのベース電
流を減少させて導通電流を一定値に制御する。電流検出
抵抗体Roおよび基準電圧発生回路の温度特性は後述す
るようlこ極めて少ないので、この一定電流は温度に関
係なく維持され従来装置での欠点を除去できる。
At the same time, a power source is used between the terminals, and the output of the reference voltage generating circuit 2 is connected to the negative input terminal of the comparator 1, and the output terminal of the comparator 1 is connected to the base of the limiting transistor TR. As the current flowing through the output transistors TRo&C increases, the voltage drop across the detection resistor Ro increases, and the potential of the positive terminal of the comparator 1 becomes higher than the potential of the negative terminal.
The output of comparator 1 becomes high potential and the limiting transistor TR
1 is turned on, the base current of the output transistor TRo is decreased and the conduction current is controlled to a constant value. Since the temperature characteristics of the current detection resistor Ro and the reference voltage generation circuit are extremely small as will be described later, this constant current is maintained regardless of temperature, and the drawbacks of the conventional device can be eliminated.

ここで比較器lおよび基準電圧発生回路2の回路を第2
図に基づいて説明する。まず比較器lの回路はトランジ
スタT R2、T R3、T R4e T 1Bとダイ
オードDl、D=と固定抵抗体a3t R4とで構成さ
れ、ダイオードD2、トランジスタTR2,固定抵抗体
R,、R4でカレントミラー回路を形成し、比較器lの
バイアス電流を与えている。 トランジスタTR,およ
びトランジスタTR4は比較器lの非反転入力および反
転入力を形成し、トランジスタTR11およびダイオー
ドD□は前記反転・非反転入力の入力電位差に応じて電
流を出力する出力回路を形成している。
Here, the circuit of comparator l and reference voltage generation circuit 2 is
This will be explained based on the diagram. First, the comparator l circuit is composed of transistors T R2, T R3, T R4e T 1B, diodes Dl, D=, and fixed resistors a3t R4, and the current is It forms a mirror circuit and provides a bias current for the comparator l. The transistor TR and the transistor TR4 form a non-inverting input and an inverting input of the comparator l, and the transistor TR11 and the diode D form an output circuit that outputs a current according to the input potential difference between the inverting and non-inverting inputs. There is.

いまトランジスタTR4の反転入力に基準電圧発生回路
2から基準電圧を入力させると、トランジスタTR,の
非反転入力に電流検出抵抗Roに電圧降下を生じ、この
電圧降下が前記基準電圧を上回ったとき比較器1の出力
側に接続されたトランジスタTR,のベース電流が増加
し、逆に下回ったときにはベース電流が減少する。した
がって回路が定常状態のときには比較器1の反転・非反
転側入力の電位が同一であり電流検出抵抗R,での電圧
降下は一定となるので出力トランジスタTR,の出力電
流IOは定電流化される。
Now, when the reference voltage from the reference voltage generation circuit 2 is input to the inverting input of the transistor TR4, a voltage drop occurs across the current detection resistor Ro at the non-inverting input of the transistor TR, and when this voltage drop exceeds the reference voltage, a comparison is made. The base current of the transistor TR connected to the output side of the transistor 1 increases, and conversely, when it falls below, the base current decreases. Therefore, when the circuit is in a steady state, the potentials of the inverting and non-inverting side inputs of comparator 1 are the same and the voltage drop across the current detection resistor R is constant, so the output current IO of the output transistor TR is made constant. Ru.

次に基準電圧発生回路2の回路はトランジスタT a、
 t TR7e T R8e T R9* T RIG
 e T all * T R12#TR工、、TR□
4 e T axsおよび固定抵抗R,、R,、R,と
で構成され、トランジスタTR,のエミ、りに生ずる電
圧Voを定電圧化している。これは固定抵抗体R? e
 R1# R9とトランジスタTFt、 、 TR,、
TR,のベースとエミ、り間の順ドロ、プとトランジス
タTR,でトランジスタTR,のベース電流を制御する
ことにより端子間に印加される電源の広い範囲にわたり
て電圧Vo ft一定に保っているからである。
Next, the circuit of the reference voltage generation circuit 2 includes transistors T a,
t TR7e T R8e T R9* T RIG
e T all * T R12#TR engineering,, TR□
4 e T axs and fixed resistors R, , R, , R, and makes the voltage Vo generated at the emitter of the transistor TR a constant voltage. Is this a fixed resistor R? e
R1# R9 and transistor TFt, , TR,,
The voltage Vo ft is kept constant over a wide range of the power applied between the terminals by controlling the base current of the transistor TR with the sequential drop between the base and emitter of TR and the transistor TR. It is from.

トランジスタTRl0 、 TRII 、 TR□2は
トランジスタTR,にベース電流を供給するバイアス源
を形成しており、とくにトランジスタTR,は電圧動作
形なる電界効果トランジスタを用いているため電源電圧
によらずにバイアス電流を定電流化でき、電圧V、の高
精度な安定化と回路自身の低消費電流化が得られる。ト
ランジスタTR13、T R14、T R15は電流増
幅器を形成していて、トランジスタTR,のコレクタ電
流を増幅することにより前記バイアス源のバイアス電流
の低消費電流化を図るとともに端子美に印加される電源
電圧の最低動作電圧を、トランジスタTR15のベース
・エミ、り間のj@ドロップとトランジスタT R1,
のコレクタ・エミ、り間の飽和電圧の和だけ電圧Voを
上回るような値にしている。固定抵抗体R5s R6は
電圧■oを分圧して基準電圧VREFを生じている。
The transistors TRl0, TRII, and TR□2 form a bias source that supplies base current to the transistor TR. In particular, the transistor TR uses a voltage-operated field effect transistor, so it can be biased independently of the power supply voltage. The current can be made constant, the voltage V can be stabilized with high precision, and the current consumption of the circuit itself can be reduced. The transistors TR13, TR14, and TR15 form a current amplifier, and by amplifying the collector current of the transistor TR, the bias current of the bias source is reduced in current consumption, and the power supply voltage applied to the terminals is The minimum operating voltage of the transistor TR15 is determined by the j@ drop between the base and emitter of the transistor TR15 and the transistor TR1,
The value is set such that the sum of the saturation voltages between the collector, emitter, and rib exceeds the voltage Vo. The fixed resistors R5s and R6 divide the voltage ■o to generate a reference voltage VREF.

以上述べた回路構成によって得られる電圧v。Voltage v obtained by the circuit configuration described above.

を求めてみると、固定抵抗R7およびR8を流れる電流
をそれぞれIl、 I2とし、トランジスタTR。
Let the currents flowing through the fixed resistors R7 and R8 be Il and I2, respectively, and the transistor TR.

およびTR8のベース・エミ、り間の順ドロ、プは略々
等しいのでこれをVBEとすると次式が成立する。
Since the order drop and drop between the base, emitter, and rear of TR8 are approximately equal, if this is taken as VBE, the following equation holds true.

Vo = IIRy +VBE  ・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・(1)IIRy = I2R8・・・・・・
・・・t・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・(2)ここでに:ボルツマン定数、q
:[子の電荷量。
Vo = IIRy +VBE ・・・・・・・・・
・・・・・・・・・・・・・・・・・・・・・・・・
・・・・・・(1) IIRy=I2R8・・・・・・
・・・t・・・・・・・・・・・・・・・・・・
・・・・・・・・・(2) Here: Boltzmann constant, q
: [Charge amount of child.

T:絶対温度 (1)式に(2)式と(3)式を代入するとこのときの
電圧voの温度係数を求めると、とおくと、 すなわちこの条件を満足する抵抗体R7e as e 
R9の抵抗値を選べば、温度に無関係な一定の定電圧出
力を得ることができる。このとき定電圧値■Oを計算す
るとトランジスタをシリコンで形成したdVBg   
2 mV/’C”C”あり、室温でT = 273°K
T: Absolute temperature By substituting equations (2) and (3) into equation (1), we can find the temperature coefficient of voltage vo at this time: In other words, a resistor R7e that satisfies this condition is
By selecting the resistance value of R9, a constant constant voltage output independent of temperature can be obtained. At this time, when calculating the constant voltage value ■O, dVBg when the transistor is made of silicon.
2 mV/'C"C", T = 273°K at room temperature
.

場合?− VBg = 0.6〜0.7vであるからこれらを(4
)式に代入すると、 V V6 = 2 mV/’c x 273°に+0,65
  :1.2   ・・・・・・(7)であるから出力
トランジスタTR,の出力電流1゜を計算すると次のよ
うになる。すなわち、電流検出抵抗体Roの電圧降下を
VIs 固定抵抗体R息と可変抵抗体R2によりvlを
分圧して比較器1の非反転入力に入力する電圧なりtn
とすれば定常状態では VBEF ” Vlflである
から次式が成!する。
case? - Since VBg = 0.6 to 0.7v, these are (4
), V V6 = 2 mV/'c x +0,65 at 273°
:1.2 Since (7), the output current 1° of the output transistor TR is calculated as follows. In other words, the voltage drop across the current detection resistor Ro is VIs, which is the voltage tn that is input to the non-inverting input of the comparator 1 by dividing vl by the fixed resistor R and the variable resistor R2.
Then, in the steady state, VBEF '' Vlfl, so the following equation is established!

ここで(11)式の定電流出カニ0の温度係数を求める
と については、実際の使用状態においては数Aの出力電流
に対して数百mVの電圧降下をもって定電流化するため
、電流検出抵抗体Roの抵抗値としては数十〜数百用の
範囲となり、抵抗体の材料としては金属を用いることに
なるのでその温度係数はほとんど零に近い。したがって
(6)式の条件の明による電流制限トランジス装置を用
うれば温度依存性のない定11E出力を得ることができ
る。
Here, in order to find the temperature coefficient of constant current output of 0 in equation (11), in actual use, the output current of several A is converted to a constant current with a voltage drop of several hundred mV, so the current detection The resistance value of the resistor Ro is in the range of tens to hundreds, and since metal is used as the material of the resistor, its temperature coefficient is almost zero. Therefore, by using a current limiting transistor device that satisfies the condition of equation (6), a constant 11E output without temperature dependence can be obtained.

〔発明の効果〕〔Effect of the invention〕

この発明によれば出力トランジスタ、電流検出抵抗体、
比較器、基準電圧発生回路、制御トランジスタ、固定抵
抗体および可変抵抗体で回路を構成したので、基準電圧
発生回路、比較器および電流検出抵抗体の温度変化が極
めて少なくなり、出力トランジスタに流れる出力電流値
を周囲温度に無関係に一定値とすることが可能である。
According to this invention, an output transistor, a current detection resistor,
Since the circuit is composed of a comparator, a reference voltage generation circuit, a control transistor, a fixed resistor, and a variable resistor, temperature changes in the reference voltage generation circuit, comparator, and current detection resistor are extremely small, and the output flowing to the output transistor is minimized. It is possible to keep the current value constant regardless of the ambient temperature.

【図面の簡単な説明】[Brief explanation of drawings]

第一1図はこの発明の実施例を示す回路構成図、第2図
は第1図における基準電圧発生回路および比較器の回路
図、第3図は従来装置の回路構成図、第4図は第3図に
示す装置lこおける出力電流と温度との関係を示す線図
である。 1:比較器、2:基皐電圧発生回路、 10.20,30:端子、Ro:電流検出抵抗体、K1
=固定抵抗体、R2二可変抵抗体、TR(、:出力トラ
ンジスタ、TR,:制御トランジスタ。 第2図
FIG. 11 is a circuit diagram showing an embodiment of the present invention, FIG. 2 is a circuit diagram of the reference voltage generation circuit and comparator in FIG. 1, FIG. 3 is a circuit diagram of a conventional device, and FIG. 4 is a diagram showing the relationship between output current and temperature in the device shown in FIG. 3. FIG. 1: Comparator, 2: Basic voltage generation circuit, 10.20, 30: Terminal, Ro: Current detection resistor, K1
= fixed resistor, R2 variable resistor, TR (,: output transistor, TR,: control transistor. Fig. 2

Claims (1)

【特許請求の範囲】[Claims] 1)出力トランジスタ、電流検出抵抗体、比較器、基準
電圧発生回路、制御トランジスタ、固定抵抗体および可
変抵抗体を組合わせて3端子回路を構成し、出力トラン
ジスタと直列接続されている電流検出抵抗体により出力
トランジスタの電流値を検出し、これより得られる検出
電圧および基準電圧を比較器の入力側に接続し、比較器
の出力により出力トランジスタのベース電位を所定値に
制御するようにしたことを特徴とする電流制限付トラン
ジスタ装置。
1) A three-terminal circuit is constructed by combining an output transistor, a current detection resistor, a comparator, a reference voltage generation circuit, a control transistor, a fixed resistor, and a variable resistor, and a current detection resistor is connected in series with the output transistor. The current value of the output transistor is detected by the body, the detected voltage and reference voltage obtained from this are connected to the input side of the comparator, and the base potential of the output transistor is controlled to a predetermined value by the output of the comparator. A current-limiting transistor device characterized by:
JP60107903A 1985-05-20 1985-05-20 Transistor device with current limit Expired - Lifetime JPH0628009B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60107903A JPH0628009B2 (en) 1985-05-20 1985-05-20 Transistor device with current limit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60107903A JPH0628009B2 (en) 1985-05-20 1985-05-20 Transistor device with current limit

Publications (2)

Publication Number Publication Date
JPS61265609A true JPS61265609A (en) 1986-11-25
JPH0628009B2 JPH0628009B2 (en) 1994-04-13

Family

ID=14470990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60107903A Expired - Lifetime JPH0628009B2 (en) 1985-05-20 1985-05-20 Transistor device with current limit

Country Status (1)

Country Link
JP (1) JPH0628009B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147255A (en) * 1977-05-27 1978-12-21 Hitachi Ltd Current output circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53147255A (en) * 1977-05-27 1978-12-21 Hitachi Ltd Current output circuit

Also Published As

Publication number Publication date
JPH0628009B2 (en) 1994-04-13

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