JPS61251126A - Vapor growth method - Google Patents

Vapor growth method

Info

Publication number
JPS61251126A
JPS61251126A JP9316685A JP9316685A JPS61251126A JP S61251126 A JPS61251126 A JP S61251126A JP 9316685 A JP9316685 A JP 9316685A JP 9316685 A JP9316685 A JP 9316685A JP S61251126 A JPS61251126 A JP S61251126A
Authority
JP
Japan
Prior art keywords
substrate
auxiliary
slippage
occurrence
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9316685A
Other languages
Japanese (ja)
Inventor
Nobuo Kashiwagi
Shigeru Suzuki
Yoshihiro Miyanomae
Original Assignee
Toshiba Mach Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Mach Co Ltd filed Critical Toshiba Mach Co Ltd
Priority to JP9316685A priority Critical patent/JPS61251126A/en
Publication of JPS61251126A publication Critical patent/JPS61251126A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To facilitate the maintenance of a device and to prevent the occurrence of slippage by using infrared rays from an auxiliary heat increase source only for the heating process of a substrate. CONSTITUTION:The heat is mainly obtained from a high-frequency induction heater in which a susceptor 5 is used. The heating from the surface side of a substrate 6 by means of infrared rays is auxiliary used for the heating in the heat increase process which is most problematic in the occurrence of a slippage. Thus, it is made possible to transfer the substrate 6 from a elastic state to a plastic state while making the temperature distribution within the susceptor 5 and the surface of the substrate 6 supported by it uniform, thereby preventing the occurrence of slippage. Moreover, it is possible to increase the lifetime of an auxiliary heat source such as a lamp 2 since no auxiliary heater during the vapor growth where reaction gas is flown.
JP9316685A 1985-04-30 1985-04-30 Vapor growth method Pending JPS61251126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9316685A JPS61251126A (en) 1985-04-30 1985-04-30 Vapor growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9316685A JPS61251126A (en) 1985-04-30 1985-04-30 Vapor growth method

Publications (1)

Publication Number Publication Date
JPS61251126A true JPS61251126A (en) 1986-11-08

Family

ID=14074981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9316685A Pending JPS61251126A (en) 1985-04-30 1985-04-30 Vapor growth method

Country Status (1)

Country Link
JP (1) JPS61251126A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015070045A (en) * 2013-09-27 2015-04-13 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method and program

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015070045A (en) * 2013-09-27 2015-04-13 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method and program

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