JPS61241659A - Inspecting device - Google Patents

Inspecting device

Info

Publication number
JPS61241659A
JPS61241659A JP60082486A JP8248685A JPS61241659A JP S61241659 A JPS61241659 A JP S61241659A JP 60082486 A JP60082486 A JP 60082486A JP 8248685 A JP8248685 A JP 8248685A JP S61241659 A JPS61241659 A JP S61241659A
Authority
JP
Japan
Prior art keywords
substrate
photomask substrate
inspection
inspected
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60082486A
Other languages
Japanese (ja)
Inventor
Yukihiro Oketa
桶田 幸宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP60082486A priority Critical patent/JPS61241659A/en
Publication of JPS61241659A publication Critical patent/JPS61241659A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To detect defect in an object to be inspected surely and quickly by making an oscillating section and a receiving section scan the object and detecting the defect by ultrasonic wave arriving from the oscillating section to the receiving section through the object of inspection. CONSTITUTION:Ultrasonic wave radiated from a cable transmitter 6 toward the photomask substrate 3 passes the substrate 3 from the lower face to the upper face, and defect of the substrate 3 is detected by a receiver 6. Every time an XY table 1 moves in left and right direction by specified distance, it is sent by specified pitch in the direction perpendicular to the surface of the paper, and the transmitter 6 and receiver 7 scan the whole face of the substrate fixed to the table 1 at specified speed. After inspecting the whole face of the substrate 3, the table 1 is stopped, and fixing of the substrate 3 by a positioning pin 4 is released, and the substrate 3 is removed from the table 1. By repeating this series of operations, inspection of defect of many substrates 3 can be made quickly at high accuracy.

Description

【発明の詳細な説明】 [技術分野] 本発明は、検査技術、特に半導体装置の製造に用いられ
るフォトマスク基板の検査に適用して有効な技術に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an inspection technique, and particularly to a technique that is effective when applied to the inspection of photomask substrates used in the manufacture of semiconductor devices.

[背景技術] 一般に、半導体装置の製造においては、たとえばシリコ
ンなどからなる半導体基板すなわちウェハに形成される
半導体素子の配線構造などのパターンを転写する原版と
して、フォトマスクが用いられる。
[Background Art] Generally, in the manufacture of semiconductor devices, a photomask is used as an original plate for transferring a pattern such as a wiring structure of a semiconductor element formed on a semiconductor substrate or wafer made of silicon or the like.

このフォトマスクは、通常透明なガラス板などからなる
フォトマスク基板上にクロムなどの遮光膜を全面にわた
って被着させた後、この遮光膜の一部をエツチングによ
って除去し、遮光膜に所定のパターンの透光部を形成し
て製作される。
This photomask is made by depositing a light-shielding film such as chrome over the entire surface of the photomask substrate, which is usually made of a transparent glass plate, and then removing a portion of the light-shielding film by etching. It is manufactured by forming a transparent part.

この場合、本来透明であるべきフォトマスク基板の透光
部に、フォトマスク基板の製造時に形成された気泡、傷
、あるいは異物などの欠陥が存在すると、パターンの転
写の際にこれらの欠陥の影が本来のパターンとともに転
写されて、パターン欠陥の発生の原因となる。
In this case, if there are defects such as bubbles, scratches, or foreign matter formed during the manufacturing of the photomask substrate in the light-transmitting part of the photomask substrate, which should be transparent, the shadows of these defects may appear during pattern transfer. is transferred together with the original pattern, causing pattern defects.

また、半導体装置の小型化に伴って、パターン形状は微
細化、高密度化の傾向にあり、フォトマスク基板に存在
される気泡、傷、異物などの欠陥をより高精度で検査す
ることが要請されつつある。
In addition, as semiconductor devices become smaller, pattern shapes tend to become finer and denser, and there is a need to inspect defects such as bubbles, scratches, and foreign objects on photomask substrates with higher precision. It is being done.

このため、フォトマスク基板に遮光膜を被着形成する前
に、たとえば目視によって上記の気泡、傷、異物などの
有無を検査することが考えられるが、目視による検査で
は、検出可能な欠陥の大きさに限度があり、さらに検査
精度を向上させるためには検査作業が長時間とならざる
を得ず、またある程度の欠陥の検出漏れの発生が避けら
れないなど、フォトマスクの製作過程における歩留りお
よび作業能率の低下の原因となっていることを本発明者
は見いだした。
For this reason, before forming a light-shielding film on a photomask substrate, it is conceivable to visually inspect the presence or absence of the above-mentioned bubbles, scratches, foreign objects, etc. In addition, to improve inspection accuracy, the inspection work must take a long time, and it is inevitable that some defects will be missed. The present inventor has discovered that this causes a decrease in work efficiency.

さらに、目視による検査では、通常投光器などの光線を
フォトマスク基板に照射し、透過光を観察することによ
って検査が行われるため、フォトマスク基板に遮光膜が
形成された後には検査が行えず、検査工程に制約が生じ
るという不具合もある。
Furthermore, in visual inspection, inspection is usually performed by irradiating the photomask substrate with a light beam from a projector and observing the transmitted light, so inspection cannot be performed after the light-shielding film is formed on the photomask substrate. There is also the problem that restrictions are placed on the inspection process.

なお、フォトマスクの検査技術について説明されている
文献としては、株式会社工業調査会、昭和56年11月
10日発行、「電子材料」1981年別冊、P214〜
P220がある。
In addition, documents explaining photomask inspection techniques include Kogyo Kenkyukai Co., Ltd., published November 10, 1981, "Electronic Materials" 1981 special edition, P214~
There is P220.

[発明の目的コ 本発明の目的は、高精度で迅速に検査を行うことが可能
な検査波を提供することにある。
[Object of the Invention] An object of the present invention is to provide a test wave that allows rapid and highly accurate testing.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[発明の概要] 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、つぎの通りである。
[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、被検査物に対して相対的に移動可能な発振部
および受振部を設け、被検査物に対して発振部および受
振部を走査させ、発振部から放射され前記被検査物を介
して受振部に到達される超音波によって、該被検査物の
検査が行われる構造とすることにより、被検査物に存在
する欠陥が漏れなく確実かつ迅速に検知されるようにし
て、被検査物の検査の精度および生産性を向上させたも
のである。
That is, an oscillating section and a vibration receiving section are provided that are movable relative to the object to be inspected, and the oscillating section and the receiving section are made to scan the object to be inspected, and the vibrations emitted from the oscillating section are received via the object to be inspected. By adopting a structure in which the inspection of the object to be inspected is performed using ultrasonic waves that reach the area, any defects present in the object to be inspected can be detected reliably and quickly without omission. This improves accuracy and productivity.

[実施例1] 第1図は、本発明の一実施例である検査装置の断面図で
ある。
[Example 1] FIG. 1 is a cross-sectional view of an inspection device that is an example of the present invention.

図の左右方向および紙面に垂直な方向に移動自在なXY
テーブル1の中央部には、XYテーブル1を垂直方向に
貫通するように窓部2が形成されている。
XY that can move freely in the horizontal direction of the diagram and in the direction perpendicular to the paper surface
A window 2 is formed in the center of the table 1 so as to vertically penetrate the XY table 1.

そして、XYテーブル1の上部中央には、窓部2を覆う
ように、フォトマスク基板3 (被検査物)が下面をX
Yテーブル1の下方に露出するように水平に載置され、
前記窓部2の周辺部に配設された複数の位置決めピン4
によって着脱自在に固定されている。
A photomask substrate 3 (object to be inspected) is placed at the center of the upper part of the XY table 1 so as to cover the window 2.
It is placed horizontally so as to be exposed below the Y table 1,
A plurality of positioning pins 4 arranged around the window portion 2
It is removably fixed by.

また、XYテーブルlに載置されたフォトマスク基板3
の下面側には、超音波パルス発振器5(発振部)に接続
された送波器6(発振部)が設けられ、所定の周波数の
超音波が送波器6の上方に位置されるフォトマスク基板
3の下面に向かって放射されるように構成されている。
In addition, the photomask substrate 3 placed on the XY table l
A transmitter 6 (oscillating section) connected to an ultrasonic pulse oscillator 5 (oscillating section) is provided on the lower surface side of the photomask, and ultrasonic waves of a predetermined frequency are placed above the transmitter 6. It is configured to radiate toward the lower surface of the substrate 3.

さらにフォトマスク基板3の上面側には、フォトマスク
基板3を介して送波器6と対向するように受波器7(受
振部)が設けられ、送波器6からフォトマスク基板3に
向かって放射され、フォトマスク基板3を下面から上面
に向かって通過する超音波が検知されるように構成され
ている。
Furthermore, a wave receiver 7 (wave receiving section) is provided on the upper surface side of the photomask substrate 3 so as to face the wave transmitter 6 via the photomask substrate 3, and a wave receiver 7 (wave receiving section) is provided so as to face the wave transmitter 6 through the photomask substrate 3. The structure is such that ultrasonic waves emitted from the photomask substrate 3 and passing through the photomask substrate 3 from the bottom surface toward the top surface are detected.

この場合、送波器6および受波器7は、所定の支持アー
ム(図示せず)などによってXYテーブル1に対して独
立に固定されるように構成され、XYテーブル1を図の
左右方向に所定の距離だけ移動させる毎に、紙面に垂直
な方向に所定のピッチだけ送るように駆動させることに
よって、送波器6および受波器7が、XYテーブル1に
固定されたフォトマスク基板3の全面に渡って所定の速
さで相対的に走査されるものである。
In this case, the transmitter 6 and the receiver 7 are configured to be independently fixed to the XY table 1 by a predetermined support arm (not shown) or the like, and the XY table 1 is moved horizontally in the figure. By driving the wave transmitter 6 and the wave receiver 7 so as to move the photomask substrate 3 fixed to the XY table 1 by a predetermined pitch in a direction perpendicular to the plane of the paper each time it is moved by a predetermined distance, The entire surface is relatively scanned at a predetermined speed.

そして、この受波器7においては、送波器6から放射さ
れフォトマスク基板3を通過して入射された超音波振動
が所定の電気信号に変換され、信号処理部8(受振部)
を経て、テレビ画面などからなる表示部9(受振部)に
おいて、たとえば、超音波振動の波形が観測される構造
とされている。
In the wave receiver 7, the ultrasonic vibrations emitted from the wave transmitter 6 and incident through the photomask substrate 3 are converted into a predetermined electric signal, and a signal processing section 8 (wave receiving section)
The structure is such that, for example, the waveform of the ultrasonic vibration is observed on a display section 9 (vibration receiving section) consisting of a television screen or the like.

一方、フォトマスク基板3の正常な部分においては、密
度などの物性はほぼ一様であるが、気泡、割れなどの傷
、異物などに起因する種々の欠陥が存在した場合には、
この欠陥の部分で密度などの物性が不連続となる。
On the other hand, in a normal part of the photomask substrate 3, physical properties such as density are almost uniform, but if there are various defects caused by bubbles, scratches such as cracks, foreign matter, etc.
Physical properties such as density become discontinuous at this defective part.

そして、送波器6からフォトマスク基板3に放射され、
フォトマスク基板3において、上記ような欠陥を有する
部位を通過する超音波は、密度の不連続な部分における
散乱や減衰などに起因して、波形や伝達速度などに乱れ
を生じ、これらの乱れを受波器7、信号処理部8を介し
て、表示部9において波形の変化や乱れとして観測する
ことにより、フォトマスク基板3に存在される欠陥の大
きさや、フォトマスク基板3の厚さ方向における深さ、
およびその時のXYテーブル1の位置からフォトマスク
基板3の平面における位置などが検知されるものである
Then, it is radiated from the transmitter 6 to the photomask substrate 3,
In the photomask substrate 3, ultrasonic waves that pass through areas with defects such as those described above cause disturbances in waveforms, transmission speeds, etc. due to scattering and attenuation in areas with discontinuous density, and these disturbances are By observing changes and disturbances in the waveform on the display section 9 via the receiver 7 and the signal processing section 8, it is possible to determine the size of defects present in the photomask substrate 3 and the thickness direction of the photomask substrate 3. depth,
The position of the photomask substrate 3 on the plane is detected from the position of the XY table 1 at that time.

また、送波器6からフォトマスク基板3に放射される超
音波の波長を適当に選ぶことにより、フォトマスク基板
3に存在する欠陥の検知精度を容易に向上させることが
でき微小な欠陥の検知を高精度で行うことが可能である
In addition, by appropriately selecting the wavelength of the ultrasonic waves emitted from the transmitter 6 to the photomask substrate 3, it is possible to easily improve the accuracy of detecting defects present in the photomask substrate 3. can be performed with high precision.

このように、フォトマスク基板3を介して対向され、フ
ォトマスク基板3の平面を走査される送波器6および受
波器7が設けられ、送波器6から発振され、フォトマス
ク基板3を通過して受波器7に到達される超音波によっ
て検査が行われるため、フォトマスク基板3に存在する
欠陥が漏れなく確実に、かつ迅速に検知される。
In this way, a wave transmitter 6 and a wave receiver 7 are provided which face each other with the photomask substrate 3 in between and scan the plane of the photomask substrate 3. Since the inspection is performed using the ultrasonic waves that pass through and reach the receiver 7, any defects present in the photomask substrate 3 can be detected reliably and quickly.

以下、本実施例の作用について説明する。The operation of this embodiment will be explained below.

はじめに、フォトマスク基板3がXYテーブル1の上に
水平に載置され、垂直方向に対向して設けられた送波器
6および受波器7の間に位置されて位置決めピン4によ
って固定される。
First, the photomask substrate 3 is placed horizontally on the XY table 1, and is positioned between the wave transmitter 6 and the wave receiver 7, which are vertically opposed to each other, and is fixed by the positioning pins 4. .

次に、XYテーブル1の移動が開始され、このフォトマ
スク基板3を介して上下方向に対向され、XYテーブル
1と独立に固定されて静止される送波器6および受波器
7が、XYテーブルlに載置されたフォトマスク基板3
の全面にわたって所定の径路で相対的に走査される。
Next, the movement of the XY table 1 is started, and the transmitter 6 and receiver 7, which are vertically opposed to each other via the photomask substrate 3 and are fixed and stationary independently of the XY table 1, are Photomask substrate 3 placed on table l
is relatively scanned along a predetermined path over the entire surface of the area.

この時、同時にXYテーブル1に載置されたフォトマス
ク基板3の下方に位置される送波器6から、所定の周波
数の超音波が上方に、すなわちフォトマスク基板3の下
面に向けて放射される。
At this time, an ultrasonic wave of a predetermined frequency is emitted upward from the transmitter 6 located below the photomask substrate 3 placed on the XY table 1, that is, toward the bottom surface of the photomask substrate 3. Ru.

フォトマスク基板3の下面に放射された送波器6からの
超音波の一部は、フォトマスク基板3を通過してフォト
マスク基板3の上面側に設けられた受渡器7に入射され
、信号処理部8をへて、表示部9において、たとえば所
定の波形として表示される。
A part of the ultrasonic waves emitted from the transmitter 6 to the lower surface of the photomask substrate 3 passes through the photomask substrate 3 and is incident on the transfer device 7 provided on the upper surface side of the photomask substrate 3, and a signal is generated. After passing through the processing section 8, the signal is displayed on the display section 9 as a predetermined waveform, for example.

この生き、フォトマスク基板3の超音婢が通過される部
位に、気泡、傷、異物などの欠陥が存在すると、欠陥部
以外の正常な部分と欠陥部とにおける密度などの物性の
不連続さに起因して、超音波の散乱や減衰などを生じる
ため、表示部9において観測される波形や伝達速度など
に変化が現れ、これらの変化に基づいて、欠陥の大きさ
やフォトマスク基板3の厚さ方向における深さなどが検
知され、さらに、この時、送波器6および受波器7をフ
ォトマスク基板3に対して相対的に走査させるために移
動されつつあるXYテーブル1の位置から、XYテーブ
ル1に載置されたフォトマスク基板3の平面方向におけ
る欠陥個所が把握される。
If defects such as bubbles, scratches, and foreign objects exist in the part of the photomask substrate 3 through which the ultrasonic wave passes, discontinuity in physical properties such as density between the normal part other than the defect part and the defect part may occur. This causes scattering and attenuation of the ultrasonic waves, which causes changes in the waveform and transmission speed observed on the display section 9. Based on these changes, the size of the defect and the thickness of the photomask substrate 3 can be determined. The depth in the horizontal direction is detected, and at this time, from the position of the XY table 1 that is being moved to scan the transmitter 6 and receiver 7 relative to the photomask substrate 3, Defect locations in the planar direction of the photomask substrate 3 placed on the XY table 1 are grasped.

このようにして、フォトマスク基板3に存在する欠陥が
漏れなく確実に、かつ迅速に検知され、フォトマスク基
板3が後のフォトマスクの製造に適するか否かが的確に
判別される。
In this way, defects present in the photomask substrate 3 can be detected without fail, reliably, and quickly, and it can be accurately determined whether the photomask substrate 3 is suitable for later manufacturing of a photomask.

この結果、フォトマスク基板3に存在する欠陥の検査漏
れによって、欠陥部を有しフォトマスクの製作に適さな
いフォトマスク基板3がフォトマスクなどの製作に用い
られることが回避でき、フォトマスクの製作工程、およ
びこのフォトマスクを用いて行われる、ウェハに対する
パターンの転写作業におけるパターン不良の発生が未然
に防止され、半導体装置の製造工程における、歩留りお
よび生産性が向上される。
As a result, it is possible to avoid using the photomask substrate 3 which has defective parts and is not suitable for photomask production due to omission of inspection for defects existing in the photomask substrate 3, and to produce photomasks. Pattern defects are prevented from occurring in the process and in the pattern transfer operation to the wafer performed using this photomask, and the yield and productivity in the semiconductor device manufacturing process are improved.

そして、フォトマスク基板3の全面にわたって上記の検
査が行われた後、XYテーブル1は停止され、位置決め
ピン4によるフォトマスク基板3の固定が解除され、フ
ォトマスク基板3はXYテーブル1の上から取り除かれ
る。
After the above inspection is performed over the entire surface of the photomask substrate 3, the XY table 1 is stopped, the fixation of the photomask substrate 3 by the positioning pins 4 is released, and the photomask substrate 3 is removed from the top of the XY table 1. be removed.

上記の一連の操作が繰り返されることによって、多数の
フォトマスク基板3の検査が高精度に、かつ迅速に行わ
れる。
By repeating the above series of operations, a large number of photomask substrates 3 can be inspected with high precision and quickly.

また、上記の説明では、ガラスなどの単一の材料で構成
されるフォトマスク基板3の検査について説明したが、
このフォトマスク基板3にクロムなどの遮光膜が表面に
一様に形成されたマスクブランクなどの欠陥の有無の検
査にも適用でき、フォトマスクの製作において、素材の
検査を行う時期に対する制約が軽減され、検査の適用範
囲が拡大される。
Furthermore, in the above explanation, the inspection of the photomask substrate 3 made of a single material such as glass was explained.
This can also be applied to inspecting the presence or absence of defects in mask blanks in which a light-shielding film such as chromium is uniformly formed on the surface of the photomask substrate 3, reducing restrictions on when to inspect materials in photomask production. The scope of inspection will be expanded.

[実施例2] 第2図は、本発明の他の実施例である検査装置の断面図
である。
[Embodiment 2] FIG. 2 is a cross-sectional view of an inspection device that is another embodiment of the present invention.

本実施例2においては、超音波の送波器6および受波器
7が、検査対象であるフォトマスク基板3の同一側面に
設けられているところが前記実施例1と異なる。
The second embodiment differs from the first embodiment in that the ultrasonic transmitter 6 and receiver 7 are provided on the same side of the photomask substrate 3 to be inspected.

すなわち、XYテーブル1に水平に載置されたフォトマ
スク基板3の上面側には、送波器6および受波器7がフ
ォトマスク基板3の平面に対して所定の角度に軸が傾斜
されて設けられ、送波器6から放射された超音波がフォ
トマスク基板3の上面に所定の角度で入射され、フォト
マスク基板3の下面で反射された反射波が受波器7に捕
捉されるように構成されているものである。
That is, on the upper surface side of the photomask substrate 3 placed horizontally on the XY table 1, a wave transmitter 6 and a wave receiver 7 are provided with their axes inclined at a predetermined angle with respect to the plane of the photomask substrate 3. The ultrasonic wave emitted from the transmitter 6 is incident on the upper surface of the photomask substrate 3 at a predetermined angle, and the reflected wave reflected on the lower surface of the photomask substrate 3 is captured by the receiver 7. It is composed of

そして、所定の径路で駆動されるXYテーブル1に固定
され、送波器6および受波器7に対して相対的に移動さ
れつつあるフォトマスク基板3において、送波器6から
放射され、受波器7に到達される超音波が反射されるフ
ォトマスク基板3の反射部に存在される欠陥に起因して
発生される反射波の散乱や減衰などによって、表示部9
で観測される波形の変化として欠陥が検知されるもので
ある。
Then, on the photomask substrate 3 which is fixed to the XY table 1 driven along a predetermined path and is being moved relative to the wave transmitter 6 and the wave receiver 7, the radiation is emitted from the wave transmitter 6 and is received. The display section 9 is caused by scattering or attenuation of reflected waves generated due to defects existing in the reflecting section of the photomask substrate 3 where the ultrasonic waves reaching the wave transmitter 7 are reflected.
A defect is detected as a change in the waveform observed in the waveform.

[実施例3] 第3図は、本発明のさらに他の実施例である検査装置の
断面図である。
[Embodiment 3] FIG. 3 is a cross-sectional view of an inspection device that is still another embodiment of the present invention.

本実施例3においては、上部が開放された流体槽10に
貯留された、たとえば水あるいはオイルなどの液体中に
送波器6、受波器7およびフォトマスク基板3の一部が
浸漬された状態で検査が行われるところが前記の二つの
実施例と異なる。
In the third embodiment, a part of the wave transmitter 6, the wave receiver 7, and the photomask substrate 3 are immersed in a liquid such as water or oil stored in a fluid tank 10 with an open top. This embodiment differs from the previous two embodiments in that the inspection is carried out in the current state.

すなわち、流体槽10の内部に貯留された液体11の中
には、送波器6および受波器7が所定の距離をおいて水
平方向に対向するように位置され、流体槽10の上方に
垂直方向に設けられ、図の上下方向および紙面に垂直な
方向に移動自在な保持治具12によって保持される一則
端部を上にして懸垂状態にされたフォトマスク基板3が
、平面を鉛直状態にして流体槽10に貯留された液体1
1に没入され、検査される部位が、液体11の中に水平
方向に対向して設けられた送波器6および受波器7の間
に位置されるように構成されている。
That is, in the liquid 11 stored inside the fluid tank 10, the wave transmitter 6 and the wave receiver 7 are positioned so as to face each other in the horizontal direction with a predetermined distance apart, and are placed above the fluid tank 10. The photomask substrate 3 is held in a suspended state with its uniform end facing upward, and is held by a holding jig 12 that is provided vertically and is movable in the vertical direction of the figure and in the direction perpendicular to the plane of the paper. The liquid 1 stored in the fluid tank 10
The part to be immersed in the liquid 11 and inspected is located between a wave transmitter 6 and a wave receiver 7, which are horizontally opposed to each other in the liquid 11.

そして、保持治具12に懸垂状態に保持されるフォトマ
スク基板3は、上下方向に所定の距離だけ移動される毎
に、紙面に垂直な方向に所定のピッチだけ移動されるこ
とによって、液体槽内に固定されて設けられた送波器6
および受波器7がフォトマスク基板3に対して相対的に
走査され、送波器6、受波器7およびフォトマスク基板
3の検査部位が常に液体11の中に浸漬された状態で検
査が行われるように構成されているものである。
The photomask substrate 3 held in a suspended state by the holding jig 12 is moved by a predetermined pitch in a direction perpendicular to the plane of the paper every time it is moved by a predetermined distance in the vertical direction. A transmitter 6 fixedly provided within the
Then, the wave receiver 7 is scanned relative to the photomask substrate 3, and the inspection is performed with the wave transmitter 6, the wave receiver 7, and the inspection portion of the photomask substrate 3 constantly immersed in the liquid 11. It is configured to take place.

この場合、送波器6および受波器7とフォトマスク基板
3との間には、空気などの気体よりも密度の大な、した
がって内部を伝達される超音波の減衰率の低い液体11
が介在されるため、送波器6からフォトマスク基板3の
表面に向かって放射される超音波およびフォトマスク基
板3を通過して受波器7に到達される超音波の伝達が効
率良く行われ、フォトマスク基板3の検査部位に存在さ
れる欠陥に起因して発生される反射波の散乱や減衰など
によって、表示部9で観測される波形の変化がより明確
に観測され、欠陥の検査精度がより向上される。
In this case, a liquid 11 is provided between the transmitter 6 and the receiver 7 and the photomask substrate 3, which has a higher density than a gas such as air, and therefore has a lower attenuation rate of the ultrasonic waves transmitted inside.
is interposed, the ultrasonic waves emitted from the transmitter 6 toward the surface of the photomask substrate 3 and the ultrasonic waves that pass through the photomask substrate 3 and reach the receiver 7 are efficiently transmitted. Due to the scattering and attenuation of reflected waves generated due to defects present in the inspection area of the photomask substrate 3, changes in the waveform observed on the display section 9 can be observed more clearly, and defects can be inspected. Accuracy is further improved.

[効果] (1)、被検査物に対して相対的に移動可能な発振部お
よび受振部からなり、前記被検査物に対して前記発振部
および受振部を走査させ、発振部から放射され被検査物
を介して受振部に到達される超音波によって、被検査物
の検査が行われる構造であるため、被検査物に存在する
欠陥を漏れなく確実かつ迅速に検知することが可能とな
り、被検査物の検査の精度および生産性が向上される。
[Effects] (1) Consisting of an oscillating part and a vibration receiving part that are movable relative to the object to be inspected, the oscillating part and the vibration receiving part are scanned with respect to the object to be inspected, and the oscillating part emits radiation from the oscillating part to the object. Since the structure is such that the object to be inspected is inspected by ultrasonic waves that reach the vibration receiver through the object, it is possible to detect any defects in the object to be inspected reliably and quickly. The accuracy and productivity of inspecting objects to be inspected are improved.

(2)0発振部、受振部および被検査物の少なくとも一
部が流体中に浸漬された状態で検査が行われることによ
り、発振部および受振部と被検査物との間に密度の比較
的大な、したがって伝達される超音波の減衰率が低い、
流体が介在されることとなり、これらの発振部および受
振部と被検査物相互間において、超音波が効率良く伝達
され、検査精度が向上される。
(2) Since the inspection is performed with the oscillating part, the receiving part, and at least part of the object to be inspected immersed in the fluid, the density between the oscillating part, the receiving part, and the object to be inspected is relatively low. large, and therefore the attenuation rate of the transmitted ultrasound waves is low,
Due to the presence of fluid, ultrasonic waves are efficiently transmitted between the oscillating section and the receiving section and the object to be inspected, thereby improving inspection accuracy.

(3)、前記(1)の結果、フォトマスク基板に存在す
る欠陥の検査漏れによって、欠陥部を有しフォトマスク
の製作に適さないフォトマスク基板がフォトマスクなど
の製作に用いられることが回避でき、フォトマスクの製
作工程における無駄な加工、およびこの欠陥部を有する
フォトマスクを用いて行われる、ウェハに対するパター
ンの転写作業におけるパターン不良の発生が未然に防止
され、半導体装置の製造工程における歩留りおよび生産
性が向上される。
(3) As a result of (1) above, it is avoided that a photomask substrate that has defective parts and is not suitable for photomask production is used for the production of photomasks, etc. due to omission of inspection for defects existing on the photomask substrate. This prevents wasteful processing in the photomask manufacturing process and pattern defects in the pattern transfer work to the wafer performed using a photomask with such defects, and improves yield in the semiconductor device manufacturing process. and productivity is improved.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではな(、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the Examples (although it is possible to make various changes without departing from the gist of the invention). Not even.

たとえば、実施例1および実施例2において、送波器、
受渡器およびフォトマスク基板が液体中に浸漬されて検
査が行われる構造とすることも可能である。
For example, in Example 1 and Example 2, the transmitter,
It is also possible to adopt a structure in which the delivery device and the photomask substrate are immersed in liquid for inspection.

[利用分野] 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるフォトマスク基板の
検査技術に適用した場合について説明したが、それに限
定されるものではなく、たとえば、ウェハの内部欠陥検
査などにも適用できる。
[Field of Application] In the above description, the invention made by the present inventor was mainly applied to the field of application for photomask substrates, which is the background of the invention, but the invention is not limited to this, for example. It can also be applied to internal defect inspection of wafers.

さらに、フォトマスク基板を切り出す前のインゴット検
査、ウェハを切り出す前のシリコン単結晶のインゴット
検査などにも適用できる。
Furthermore, it can be applied to ingot inspection before cutting out photomask substrates, silicon single crystal ingot inspection before cutting out wafers, etc.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の実施例1である検査装置の断面図、 第2図は、本発明の実施例2である検査装置の断面図、 第3図は、本発明の実施例3である検査装置の断面図で
ある。 1・・・XYテーブル、2・・・窓部、3・・・フォト
マスク基板(被検査物)、4・・・位置決めピン、5・
・・超音波パルス発振器(発振部)、6・・・送波器(
発振部)、7・・・受渡器(受振部)、8・・・信号処
理部(受振部)、9・・・表示部(受振部)、1o・・
・流体槽、11・・・液体、12・・・保持治具。 第   1  図 第  3  図 δ し−ロ
1 is a cross-sectional view of an inspection device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view of an inspection device according to a second embodiment of the present invention, and FIG. 3 is a cross-sectional view of an inspection device according to a third embodiment of the present invention. It is a sectional view of a certain inspection device. DESCRIPTION OF SYMBOLS 1... XY table, 2... Window part, 3... Photomask board (object to be inspected), 4... Positioning pin, 5...
... Ultrasonic pulse oscillator (oscillation part), 6... Transmitter (
oscillation part), 7... delivery device (vibration receiving part), 8... signal processing part (vibration receiving part), 9... display part (vibration receiving part), 1o...
-Fluid tank, 11...liquid, 12...holding jig. Figure 1 Figure 3 δ

Claims (1)

【特許請求の範囲】 1、被検査物に対して相対的に移動可能な発振部および
受振部からなり、前記被検査物に対して前記発振部およ
び受振部を相対的に走査させ、前記発振部から放射され
前記被検査物を介して前記受振部に到達される超音波に
よって、前記被検査物の検査を行うことを特徴とする検
査装置。 2、前記発振部および前記受振部が、前記被測定物を介
して対向する位置に配設されていることを特徴とする特
許請求の範囲第1項記載の検査装置。 3、前記発振部および前記受振部が、前記被測定物の同
一側面側に配設されていることを特徴とする特許請求の
範囲第1項記載の検査装置。 4、前記発振部、前記受振部および被検査物の少なくと
も一部が液体中に浸漬された状態で検査が行われること
を特徴とする特許請求の範囲第1項記載の検査装置。 5、前記被検査物がフォトマスク基板であることを特徴
とする特許請求の範囲第1項記載の検査装置。
[Claims] 1. The oscillator and the receiver are movable relative to the object to be inspected, and the oscillator and the receiver are moved relative to the object to be inspected. An inspection apparatus characterized in that the object to be inspected is inspected using ultrasonic waves emitted from the section and reaching the vibration receiving section via the object to be inspected. 2. The inspection apparatus according to claim 1, wherein the oscillating section and the vibration receiving section are disposed at positions facing each other with the object to be measured interposed therebetween. 3. The inspection device according to claim 1, wherein the oscillating section and the vibration receiving section are disposed on the same side of the object to be measured. 4. The inspection apparatus according to claim 1, wherein the inspection is performed with the oscillating section, the vibration receiving section, and at least a portion of the object to be inspected being immersed in a liquid. 5. The inspection apparatus according to claim 1, wherein the object to be inspected is a photomask substrate.
JP60082486A 1985-04-19 1985-04-19 Inspecting device Pending JPS61241659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60082486A JPS61241659A (en) 1985-04-19 1985-04-19 Inspecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60082486A JPS61241659A (en) 1985-04-19 1985-04-19 Inspecting device

Publications (1)

Publication Number Publication Date
JPS61241659A true JPS61241659A (en) 1986-10-27

Family

ID=13775836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60082486A Pending JPS61241659A (en) 1985-04-19 1985-04-19 Inspecting device

Country Status (1)

Country Link
JP (1) JPS61241659A (en)

Cited By (6)

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WO2005085951A1 (en) * 2004-03-09 2005-09-15 Hoya Corporation Method for supporting mask manufacture, method for providing mask blank and mask blank dealing system
JP2006078208A (en) * 2004-09-07 2006-03-23 U-Tec Kk Ultrasonic flaw detection method and equipment for detecting flaw of functional device
JP2007303896A (en) * 2006-05-10 2007-11-22 Honda Electronic Co Ltd Device for detecting defect of substrate
JP2010175560A (en) * 2006-06-22 2010-08-12 Siltronic Ag Method and apparatus for detecting mechanical defect of ingot block made of semiconductor material
JP2011197288A (en) * 2010-03-18 2011-10-06 Toppan Printing Co Ltd Photomask and exposure apparatus
US8038895B2 (en) 2006-06-22 2011-10-18 Siltronic Ag Method and appartus for detection of mechanical defects in an ingot piece composed of semiconductor material

Cited By (14)

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Publication number Priority date Publication date Assignee Title
WO2005085951A1 (en) * 2004-03-09 2005-09-15 Hoya Corporation Method for supporting mask manufacture, method for providing mask blank and mask blank dealing system
US8627239B2 (en) 2004-03-09 2014-01-07 Hoya Corporation Mask fabrication supporting method, mask blank providing method, and mask blank dealing system
JPWO2005085951A1 (en) * 2004-03-09 2007-08-09 Hoya株式会社 Mask manufacturing support method, mask blank providing method, mask blank transaction system
US8196070B2 (en) 2004-03-09 2012-06-05 Hoya Corporation Mask fabrication supporting method, mask blank providing method, and mask blank dealing system
JP2009122708A (en) * 2004-03-09 2009-06-04 Hoya Corp Method and system for acquiring mask blank information, method for providing mask blank information, method for assisting and manufacturing transfer mask, and method for manufacturing and providing mask blank
KR100911595B1 (en) * 2004-03-09 2009-08-07 호야 가부시키가이샤 Method and system for obtaining mask blank information, method for providing mask blank information, method for supporting transfer mask manufacture and manufacturing transfer mask, and method for manufacturing and providing mask blank
US7660456B2 (en) 2004-03-09 2010-02-09 Hoya Corporation Mask fabrication supporting method, mask blank providing method, and mask blank dealing system
JP4503015B2 (en) * 2004-03-09 2010-07-14 Hoya株式会社 Mask blank information acquisition method and system, mask blank information providing method, transfer mask manufacturing support and manufacturing method, and mask blank manufacturing and providing method
JP4583847B2 (en) * 2004-09-07 2010-11-17 ユーテック株式会社 Ultrasonic flaw detection method and equipment for detecting functional device defects
JP2006078208A (en) * 2004-09-07 2006-03-23 U-Tec Kk Ultrasonic flaw detection method and equipment for detecting flaw of functional device
JP2007303896A (en) * 2006-05-10 2007-11-22 Honda Electronic Co Ltd Device for detecting defect of substrate
JP2010175560A (en) * 2006-06-22 2010-08-12 Siltronic Ag Method and apparatus for detecting mechanical defect of ingot block made of semiconductor material
US8038895B2 (en) 2006-06-22 2011-10-18 Siltronic Ag Method and appartus for detection of mechanical defects in an ingot piece composed of semiconductor material
JP2011197288A (en) * 2010-03-18 2011-10-06 Toppan Printing Co Ltd Photomask and exposure apparatus

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