JPS6123822Y2 - - Google Patents

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Publication number
JPS6123822Y2
JPS6123822Y2 JP1975174738U JP17473875U JPS6123822Y2 JP S6123822 Y2 JPS6123822 Y2 JP S6123822Y2 JP 1975174738 U JP1975174738 U JP 1975174738U JP 17473875 U JP17473875 U JP 17473875U JP S6123822 Y2 JPS6123822 Y2 JP S6123822Y2
Authority
JP
Japan
Prior art keywords
magnetic
magnetoresistive element
magnetoresistive
magnetic sensor
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1975174738U
Other languages
Japanese (ja)
Other versions
JPS5285467U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1975174738U priority Critical patent/JPS6123822Y2/ja
Publication of JPS5285467U publication Critical patent/JPS5285467U/ja
Application granted granted Critical
Publication of JPS6123822Y2 publication Critical patent/JPS6123822Y2/ja
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は磁気抵抗素子を用いた差動型磁気セン
サーに関するものである。更に詳しく言うと規則
的な磁気信号パターンから磁気信号を得るため磁
気抵抗素子の磁気抵抗体パターンを磁気信号体パ
ターンに合せることによつて高解像度にした差動
型磁気センサーに関するものである。
[Detailed Description of the Invention] The present invention relates to a differential magnetic sensor using a magnetoresistive element. More specifically, the present invention relates to a differential magnetic sensor that achieves high resolution by matching the magnetoresistive pattern of a magnetoresistive element to the magnetic signal pattern in order to obtain a magnetic signal from a regular magnetic signal pattern.

差動型磁気センサーの動作原理を簡単に説明す
る。第1図に示したものが通常用いられている磁
気センサーの構成である。特性の均しい二ケの磁
気抵抗素子1,2を直列に接続しこれに磁石を近
接させ磁石の漏洩磁束が二ケの磁気抵抗素子を均
しく横切るように配列する。磁気抵抗素子は第1
図Bに示したように接続すると中間タツプ
(outpu端子)には印加電圧の1/2の電圧が得られ
る。
The operating principle of a differential magnetic sensor will be briefly explained. What is shown in FIG. 1 is the configuration of a commonly used magnetic sensor. Two magnetoresistive elements 1 and 2 with equal characteristics are connected in series and a magnet is placed close to them so that the magnetic flux leaking from the magnets evenly crosses the two magnetoresistive elements. The magnetoresistive element is the first
When connected as shown in Figure B, a voltage 1/2 of the applied voltage is obtained at the intermediate tap (outpu terminal).

磁気抵抗素子はInSb等の材料で作られたもの
がよく知られており、素子を横切る磁束密度が変
化すると抵抗値が変化する特性をもつ。今第1図
に示した様にこの磁気センサーの磁気抵抗素子に
透磁率の高い磁性体が近ずくと磁石の漏洩磁束が
乱される。図の場合であると磁性体片に磁束が集
まるため磁気抵抗素子1、を横切る磁束密度が大
きくなり1の抵抗値が高くなる。従つて図の
output端子の電位は下る。この磁性体片が図のx
方向に移動するにつれてout put端子の電位は第
2図に示すような変化をすることになる。
Magnetoresistive elements made of materials such as InSb are well known, and have the characteristic that the resistance value changes when the magnetic flux density across the element changes. As shown in FIG. 1, when a magnetic material with high magnetic permeability approaches the magnetoresistive element of this magnetic sensor, the leakage magnetic flux of the magnet is disturbed. In the case shown in the figure, since the magnetic flux gathers on the magnetic material piece, the magnetic flux density crossing the magnetoresistive element 1 increases, and the resistance value of the element 1 increases. Therefore, the figure
The potential of the output terminal decreases. This magnetic piece is
As it moves in the direction, the potential at the output terminal changes as shown in FIG.

磁気バイアスは上に説明したように磁化してい
ない磁性体を検出するために必要なだけでなく磁
気センサーの感度を実用的な水準にまで高めるた
めに不可欠であり、特性のそろつた磁気抵抗素子
1,2を二ケ接続するのは磁気抵抗素子の温度変
化の補償等磁気センサーの出力を安定化させるた
めに有効であることが知られている。この磁気セ
ンサーは磁気インク等の微弱な磁性体や検出や回
転の検知、位置や座標の検出サーボ機構のフイー
ドバツク要素さらにはパルス発生器等に用いられ
る。
As explained above, magnetic bias is not only necessary for detecting unmagnetized magnetic materials, but also essential for increasing the sensitivity of magnetic sensors to a practical level. It is known that connecting two wires 1 and 2 is effective for stabilizing the output of the magnetic sensor, such as compensating for temperature changes in the magnetoresistive element. This magnetic sensor is used for detection of weak magnetic materials such as magnetic ink, detection of rotation, position and coordinate detection, feedback elements of servomechanisms, and pulse generators.

ところで現在のこの種の磁気センサーでは微細
な構造の被検出体(信号源)を検出することがで
きない。例えば平行移動(或には回転)する機構
部に磁性体を等間隔につけて位置(或は回転)の
検出を行う場合、信号源のピツチは現在用いられ
ているセンサーでは1ケ/mm程度である。これは
次の事情による。第3図に従来使われている磁気
抵抗素子のパターンの一例を示す。現在知られて
いる磁気抵抗効果を持つた材料で実用になる磁気
抵抗素子を構成するためには磁気抵抗値の長さを
かなりとる必要がある。そのため図3に示したよ
うに磁気抵抗体を九十九折に構成するのが普通で
ある。一本の磁気抵抗体の巾A(3図)は現在の
素子加工技術で0.1mm前後のものが作られるのが
九十九折の構造をとるため磁気抵抗素子の巾aと
しては0.5〜1mm程度のものになつてしまう。従
つて信号源の磁性体の巾も又0.5mm程度以上必要
になりそのピツチも1mm程度になる訳である。
However, current magnetic sensors of this type cannot detect objects (signal sources) with minute structures. For example, when detecting the position (or rotation) by attaching magnetic bodies at equal intervals to a mechanical part that moves in parallel (or rotates), the pitch of the signal source is approximately 1 digit/mm with the currently used sensors. be. This is due to the following circumstances. FIG. 3 shows an example of a pattern of a conventionally used magnetoresistive element. In order to construct a practical magnetoresistive element using currently known materials with magnetoresistive effect, it is necessary to have a considerable length of magnetoresistive value. For this reason, it is common to construct the magnetoresistive element in a 99-fold configuration as shown in FIG. The width A (Fig. 3) of one magnetoresistive element is around 0.1 mm with current element processing technology, but since it has a 99-fold structure, the width a of the magnetoresistive element is 0.5 to 1 mm. It becomes something of a degree. Therefore, the width of the magnetic material of the signal source also needs to be about 0.5 mm or more, and the pitch thereof is also about 1 mm.

本考案はこの問題を解決するため考案されたも
のである。第4図に実施例を示す。
The present invention was devised to solve this problem. An example is shown in FIG.

第4図aに示したのは信号源で磁性体を含んだ
インクとが磁性体薄膜等によつてd間隔に規制格
子を設けたものである。これに対して前図3のか
わりに第4図bに示すような磁気抵抗素子をもつ
た磁気センサーを準備する。このセンサーの各々
の磁気抵抗素子1,2は磁気抵抗体の九十九折構
造の間隔が信号源のピツチdに合せて作つてあ
る。その上各々の磁気抵抗素子は隣接する磁気抵
抗体の間隔を(n+1/2)d(ただしn:整数)
となるように配列する。この磁気センサーで4図
aの磁気パターンを走査すると磁気抵抗素子1が
磁気パターンと丁度重なつたとき(このとき磁気
抵抗素子を横切る磁束変化は最大となる)2の部
分は信号源の磁気パターンからはずれMR2を横切
る磁束変化は最小となる。このようにして磁気抵
抗素子の巾より微細な磁気信号パターンを読みと
ることができる。磁気センサーの出力変化は磁気
抵抗素子の磁気抵抗体部分と信号の磁性体と重な
る面積が多いほど大きくとれる。本考案の構造を
もつ磁気センサーによれば磁気抵抗体の九十九折
を多くすることによつてセンサーの解像度を犠性
にせずに出力を上げることができる。
FIG. 4a shows a signal source in which ink containing a magnetic substance is provided with regulating grids at intervals of d using a magnetic thin film or the like. For this purpose, a magnetic sensor having a magnetoresistive element as shown in FIG. 4b is prepared instead of the one shown in FIG. 3. In each of the magnetoresistive elements 1 and 2 of this sensor, the interval between the ninety-nine fold structures of the magnetoresistive body is made to match the pitch d of the signal source. Furthermore, each magnetoresistive element has an interval of (n+1/2)d (n: an integer) between adjacent magnetoresistive elements.
Arrange it so that When this magnetic sensor scans the magnetic pattern shown in Figure 4a, when magnetoresistive element 1 exactly overlaps the magnetic pattern (at this time, the change in magnetic flux across the magnetoresistive element is maximum), the part 2 is the magnetic pattern of the signal source. The magnetic flux change across MR 2 is minimal. In this way, a magnetic signal pattern finer than the width of the magnetoresistive element can be read. The output change of the magnetic sensor increases as the area where the magnetoresistive part of the magnetoresistive element overlaps with the magnetic material of the signal increases. According to the magnetic sensor having the structure of the present invention, by increasing the number of folds of the magnetoresistive element, the output can be increased without sacrificing the resolution of the sensor.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本考案の一実施例を示し、第1図Aは磁
気抵抗素子を用いた差動型磁気センサーの構成を
示したものであり、Bは回路構成を示したもので
ある。第2図は第1図の磁気センサーの出力波形
を示したものである。第3図は従来の磁気センサ
ーの磁気抵抗素子のパターンの一例を示したもの
である。第4図は本考案による磁気センサーの磁
気抵抗素子の一実施例を示したもので、a図は磁
気信号源のパターン図、b図は本考案の磁気抵抗
素子のパターン図である。 1,2……磁気抵抗素子。
The drawings show an embodiment of the present invention, and FIG. 1A shows the configuration of a differential magnetic sensor using a magnetoresistive element, and FIG. 1B shows the circuit configuration. FIG. 2 shows the output waveform of the magnetic sensor of FIG. 1. FIG. 3 shows an example of a pattern of a magnetoresistive element of a conventional magnetic sensor. FIG. 4 shows an embodiment of the magnetoresistive element of the magnetic sensor according to the present invention, in which figure a is a pattern diagram of a magnetic signal source, and figure b is a pattern diagram of the magnetoresistive element of the present invention. 1, 2... Magnetoresistive element.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 二つの磁気抵抗素子が各々間隔dなる或いは
ndなる九十九折りの磁気抵抗パターンを有し、
且隣接する磁気抵抗体部分が(n+1/2)dなる
間隔になるように二つの磁気抵抗素子を配列し
て、ピツチdなる磁気信号を読みとることを特徴
とした差動型の磁気センサー。
Two magnetoresistive elements are spaced apart from each other by d, or
It has a magnetic resistance pattern of ninety-nine folds,
A differential magnetic sensor characterized by arranging two magnetoresistive elements so that adjacent magnetoresistive parts are spaced at a distance of (n+1/2)d, and reading a magnetic signal with a pitch of d.
JP1975174738U 1975-12-23 1975-12-23 Expired JPS6123822Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1975174738U JPS6123822Y2 (en) 1975-12-23 1975-12-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1975174738U JPS6123822Y2 (en) 1975-12-23 1975-12-23

Publications (2)

Publication Number Publication Date
JPS5285467U JPS5285467U (en) 1977-06-25
JPS6123822Y2 true JPS6123822Y2 (en) 1986-07-16

Family

ID=28653099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1975174738U Expired JPS6123822Y2 (en) 1975-12-23 1975-12-23

Country Status (1)

Country Link
JP (1) JPS6123822Y2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081116A (en) * 1973-11-17 1975-07-01
JPS5081117A (en) * 1973-11-17 1975-07-01
JPS5091348A (en) * 1973-12-12 1975-07-22

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081116A (en) * 1973-11-17 1975-07-01
JPS5081117A (en) * 1973-11-17 1975-07-01
JPS5091348A (en) * 1973-12-12 1975-07-22

Also Published As

Publication number Publication date
JPS5285467U (en) 1977-06-25

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