JPS6122617A - Method of producing solid electrolytic condenser - Google Patents

Method of producing solid electrolytic condenser

Info

Publication number
JPS6122617A
JPS6122617A JP13542984A JP13542984A JPS6122617A JP S6122617 A JPS6122617 A JP S6122617A JP 13542984 A JP13542984 A JP 13542984A JP 13542984 A JP13542984 A JP 13542984A JP S6122617 A JPS6122617 A JP S6122617A
Authority
JP
Japan
Prior art keywords
solid electrolytic
semiconductor layer
capacitor
esr
producing solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13542984A
Other languages
Japanese (ja)
Inventor
石川 浩久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13542984A priority Critical patent/JPS6122617A/en
Publication of JPS6122617A publication Critical patent/JPS6122617A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はアルミニウム(AI) 、タンタル(Ta)等
弁作用金属、陽極酸化被膜、半導体層および導体層を積
層してなるコンデンサの製造方法に係り、特に酸化物半
導体や有機半導体で形成される半導体層の見掛は上の固
有抵抗を制御する方法に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for manufacturing a capacitor formed by laminating valve metals such as aluminum (AI) and tantalum (Ta), an anodized film, a semiconductor layer, and a conductor layer. In particular, the present invention relates to a method for controlling the apparent resistivity of a semiconductor layer formed of an oxide semiconductor or an organic semiconductor.

コンデンサは通常tanδ、或いは等価直列抵抗(以後
ESRと称する)が小さい程良いとされている。しかし
オーディオパワーアンプの発振防止回路等は、一般にコ
ンデンサと抵抗を直列に接続することによって構成され
ており、適度なESRを具えたコンデンサを自由に選択
して使用できるようになれば、前記回路はコンデンサの
みで構成することが可能になり回路構成上極めて有利で
ある。
It is generally believed that the smaller the tan δ or equivalent series resistance (hereinafter referred to as ESR) of a capacitor, the better. However, the oscillation prevention circuit of an audio power amplifier is generally constructed by connecting a capacitor and a resistor in series, and if it were possible to freely select and use a capacitor with an appropriate ESR, the circuit could be improved. It is possible to configure the circuit using only capacitors, which is extremely advantageous in terms of circuit configuration.

かかる要求に対し固体電解コンデンサのESRは半導体
層の抵抗骨に依存しており、従来の製造方法ではこのE
SHの制御が困難である。そこで固体電解コンデンサの
ESRを自由に制御できる製造方法の実現が要望されて
いる。
In response to such requirements, the ESR of solid electrolytic capacitors depends on the resistance structure of the semiconductor layer, and conventional manufacturing methods
It is difficult to control SH. Therefore, there is a demand for a manufacturing method that can freely control the ESR of solid electrolytic capacitors.

〔従来の技術〕[Conventional technology]

図は固体電解コンデンサの一例を示ず側断面図である。 The figure is a side sectional view that does not show an example of a solid electrolytic capacitor.

タンタルまたはアルミニウムの粉末をプレスで圧縮成形
し真空中で焼結した多孔質の焼結体、即らベレットを陽
極体1とし、その表面を陽極酸化被膜で覆った後、ペレ
ットの表面はもとより細大の中の隅々まで二酸化マンガ
ン(Mn02)等の半導体層で充填被覆して陰極体2と
する。
The anode body 1 is a porous sintered body made by compression molding tantalum or aluminum powder and sintered in a vacuum, that is, a pellet, and after covering its surface with an anodic oxide film, the surface of the pellet is A cathode body 2 is formed by filling and coating every corner of the container with a semiconductor layer such as manganese dioxide (Mn02).

そして陽極体1からは陽極リード3を引出し、陰極体2
はコロイダルカーボン層4、銀ペイント層5を介して陰
極リード6に接続し、全体をエポキシ樹脂等7によって
外装している。
Then, the anode lead 3 is pulled out from the anode body 1, and the cathode body 2
is connected to a cathode lead 6 via a colloidal carbon layer 4 and a silver paint layer 5, and the whole is covered with an epoxy resin or the like 7.

かかる固体電解コンデンサにおける二酸化マ、ンガン(
Mn02)層の形成は、通常表面を陽極酸化被膜で覆わ
れた焼結体を硝酸マンガンの水溶液に浸漬した後、これ
を電気炉に入れ350℃内外の温度で熱分解することに
よって形成される。
Manganese dioxide (manganese dioxide) in such solid electrolytic capacitors (
The Mn02) layer is usually formed by immersing a sintered body whose surface is covered with an anodic oxide film in an aqueous solution of manganese nitrate, then placing it in an electric furnace and thermally decomposing it at a temperature of around 350°C. .

しかし厳密に定義すれば形成された半導体層はMnO2
ではな(Mnχoyという形をとっており、該半導体層
の固有抵抗はこの酸素の量によって、またはそのポーラ
ス度によって変わることが知られている。
However, strictly defined, the formed semiconductor layer is MnO2
It is known that the specific resistance of the semiconductor layer changes depending on the amount of oxygen or its degree of porosity.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

半導体層の固有抵抗は酸素の量によって、またはそのポ
ーラス度によって変わることが知られており、これを制
御する方法として加熱条件の制御雰囲気の制御、焼結体
の表面状態の均−化等積々の角度からの制御が指摘され
ているが、いずれも再現性が悪〈従来の技術では十分な
制御が出来ないという問題があった。
It is known that the specific resistance of a semiconductor layer changes depending on the amount of oxygen or its degree of porosity, and methods to control this include controlling the heating conditions, controlling the atmosphere, and equalizing the surface condition of the sintered body. Control from various angles has been suggested, but they all have poor reproducibility (conventional techniques have the problem of not being able to provide sufficient control).

また有機半導体においても同様に使用できる材料の種類
が限られており、しかも材料によって固有の抵抗値を示
す伸開にあり、固有抵抗を制御する技術は確立されてい
ない。
Similarly, the types of materials that can be used for organic semiconductors are limited, and each material exhibits a unique resistance value, and no technology has been established to control the specific resistance.

〔問題点を解決するための手段〕[Means for solving problems]

上記の問題点は半導体層に絶縁物を添加することによっ
てコンデンサの等価直列抵抗を制御する、本発明になる
固体電解コンデンサの製造方法によって解決される。
The above problems are solved by the method of manufacturing a solid electrolytic capacitor according to the present invention, which controls the equivalent series resistance of the capacitor by adding an insulator to the semiconductor layer.

〔作用〕[Effect]

半導体層に絶縁物を添加し、絶縁物の種類や添加比率を
変えることによって、半導体層の見掛は上の固有抵抗を
自由に変化させることが可能になる。即ち種々のESR
を有するコンデンサを製造することができる。
By adding an insulator to the semiconductor layer and changing the type and addition ratio of the insulator, it becomes possible to freely change the apparent resistivity of the semiconductor layer. That is, various ESR
It is possible to manufacture a capacitor having a

〔実施例〕〔Example〕

以十本発明になる固体電解コンデンサの製造方法の一実
施例について述べる。
An embodiment of the method for manufacturing a solid electrolytic capacitor according to the present invention will now be described.

イ)陽極リード線に接合された表面積150mm2のア
ルミニウム焼結体を形成し、陽極化成によって0.2μ
Fの素子を形成する。
b) Form an aluminum sintered body with a surface area of 150 mm2 joined to the anode lead wire, and use anodization to form a sintered aluminum body with a surface area of 0.2 μ
Form an F element.

口)比重1.8の硝酸マンガンの水溶液にシリコーン樹
脂を添加し、攪拌しながらこの混合液に前記素子を浸漬
し引き上げる。
1) A silicone resin is added to an aqueous solution of manganese nitrate having a specific gravity of 1.8, and the element is immersed in this mixed solution while stirring and pulled up.

ハ)350℃中に10分間放置し二酸化マンガンとシリ
コーン樹脂の混合体を生成する。
c) Leave at 350°C for 10 minutes to form a mixture of manganese dioxide and silicone resin.

二)表面にコロイダルカーボンを塗布し、200℃で焼
き付ける。
2) Apply colloidal carbon to the surface and bake at 200℃.

ホ)コロイダルカーボンの上に銀ペイントを塗布し、1
50℃で焼き付ける。
e) Apply silver paint on the colloidal carbon, 1
Bake at 50℃.

へ)銀ペイントに陰極リード線を半田付けする。f) Solder the cathode lead wire to the silver paint.

ト)全体をエポキシ樹脂によって外装し固体電解コンデ
ンサとする。
g) The entire capacitor is covered with epoxy resin to form a solid electrolytic capacitor.

硝酸マンガン水溶液に対するシリコーン樹脂の添加比率
を変えた各種混合液を準備し、上記の方法で製造したコ
ンデンサのESRを測定した結果、ESRとシリコーン
樹脂の添加比率との関係は次表の通りである。
We prepared various mixtures with different ratios of silicone resin added to the manganese nitrate aqueous solution and measured the ESR of the capacitors manufactured by the above method.The relationship between ESR and the ratio of silicone resin added is shown in the table below. .

上表に示す如く樹脂添加比率に対応してESRが変化し
ている。なお等価容量は0.15〜0.25μFの範囲
にあり、樹脂添加比率との相関関係は認められない。
As shown in the table above, the ESR changes depending on the resin addition ratio. Note that the equivalent capacitance is in the range of 0.15 to 0.25 μF, and no correlation with the resin addition ratio is observed.

また本実施例では絶縁物としてシリコーン樹脂を添加し
ているが、二酸化シリコン(Si02)を粉砕した粉や
、ガラス繊維の砕片を添加しても同等の効果を得ること
ができる。
Further, in this embodiment, silicone resin is added as an insulator, but the same effect can be obtained by adding powder obtained by crushing silicon dioxide (Si02) or crushed pieces of glass fiber.

このように半導体層に絶縁物を添加し、添加する絶縁物
の種類や添加比率を変えることによって、種々のESR
を有する固体電解コンデンサを製造することができる。
By adding an insulator to the semiconductor layer and changing the type and ratio of the added insulator, various ESR characteristics can be achieved.
A solid electrolytic capacitor having the following properties can be manufactured.

即ちESRを自由に制御できる固体電解コンデンサの製
造方法を提供することができる。
That is, it is possible to provide a method for manufacturing a solid electrolytic capacitor in which ESR can be freely controlled.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によればESRを自由に制御で
きる固体電解コンデンサの製造方法を提供することがで
きる。
As described above, according to the present invention, it is possible to provide a method for manufacturing a solid electrolytic capacitor in which ESR can be freely controlled.

【図面の簡単な説明】[Brief explanation of the drawing]

図は固体電解コンデンサの一例を示す側断面図である。 The figure is a side sectional view showing an example of a solid electrolytic capacitor.

Claims (1)

【特許請求の範囲】 弁作用金属、陽極酸化被膜、半導体層および導体層を積
層してなるコンデンサにおいて、 半導体層に絶縁物を添加することによって該コンデンサ
の等価直列抵抗を制御することを特徴とする固体電解コ
ンデンサの製造方法。
[Scope of Claims] A capacitor formed by laminating a valve metal, an anodized film, a semiconductor layer, and a conductor layer, characterized in that the equivalent series resistance of the capacitor is controlled by adding an insulator to the semiconductor layer. A method for manufacturing solid electrolytic capacitors.
JP13542984A 1984-06-29 1984-06-29 Method of producing solid electrolytic condenser Pending JPS6122617A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13542984A JPS6122617A (en) 1984-06-29 1984-06-29 Method of producing solid electrolytic condenser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13542984A JPS6122617A (en) 1984-06-29 1984-06-29 Method of producing solid electrolytic condenser

Publications (1)

Publication Number Publication Date
JPS6122617A true JPS6122617A (en) 1986-01-31

Family

ID=15151518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13542984A Pending JPS6122617A (en) 1984-06-29 1984-06-29 Method of producing solid electrolytic condenser

Country Status (1)

Country Link
JP (1) JPS6122617A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05116226A (en) * 1991-10-30 1993-05-14 Sekisui Plastics Co Ltd Manufacture of foam molded body

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323064A (en) * 1976-08-17 1978-03-03 Matsushita Electric Ind Co Ltd Solid state electrolytic capacitor and method of manufacture thereof
JPS5821316A (en) * 1981-07-30 1983-02-08 富士通株式会社 Method of producing solid electrolytic condenser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323064A (en) * 1976-08-17 1978-03-03 Matsushita Electric Ind Co Ltd Solid state electrolytic capacitor and method of manufacture thereof
JPS5821316A (en) * 1981-07-30 1983-02-08 富士通株式会社 Method of producing solid electrolytic condenser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05116226A (en) * 1991-10-30 1993-05-14 Sekisui Plastics Co Ltd Manufacture of foam molded body

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