JPS6122453B2 - - Google Patents
Info
- Publication number
- JPS6122453B2 JPS6122453B2 JP991477A JP991477A JPS6122453B2 JP S6122453 B2 JPS6122453 B2 JP S6122453B2 JP 991477 A JP991477 A JP 991477A JP 991477 A JP991477 A JP 991477A JP S6122453 B2 JPS6122453 B2 JP S6122453B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- gaas
- heat treatment
- container
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 150000001875 compounds Chemical class 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000000470 constituent Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP991477A JPS5394868A (en) | 1977-01-31 | 1977-01-31 | Heat treatment method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP991477A JPS5394868A (en) | 1977-01-31 | 1977-01-31 | Heat treatment method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5394868A JPS5394868A (en) | 1978-08-19 |
JPS6122453B2 true JPS6122453B2 (enrdf_load_stackoverflow) | 1986-05-31 |
Family
ID=11733361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP991477A Granted JPS5394868A (en) | 1977-01-31 | 1977-01-31 | Heat treatment method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5394868A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022241490A1 (de) | 2021-05-17 | 2022-11-24 | Ktm Ag | Einspuriges fahrzeug |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58175828A (ja) * | 1982-04-08 | 1983-10-15 | Agency Of Ind Science & Technol | 横型炉金属溶液シ−ルによるキャップレス・アニ−ル法 |
-
1977
- 1977-01-31 JP JP991477A patent/JPS5394868A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022241490A1 (de) | 2021-05-17 | 2022-11-24 | Ktm Ag | Einspuriges fahrzeug |
Also Published As
Publication number | Publication date |
---|---|
JPS5394868A (en) | 1978-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4115163A (en) | Method of growing epitaxial semiconductor films utilizing radiant heating | |
US3839084A (en) | Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds | |
JPS6122453B2 (enrdf_load_stackoverflow) | ||
US3549401A (en) | Method of making electroluminescent gallium phosphide diodes | |
JP4022997B2 (ja) | 3−5族化合物半導体結晶へのZn拡散方法及び拡散装置 | |
US3290181A (en) | Method of producing pure semiconductor material by chemical transport reaction using h2s/h2 system | |
US4158851A (en) | Semi-insulating gallium arsenide single crystal | |
US3725149A (en) | Liquid phase diffusion technique | |
US4135952A (en) | Process for annealing semiconductor materials | |
JPH0253097B2 (enrdf_load_stackoverflow) | ||
JPS5917846B2 (ja) | 3↓−5化合物半導体への不純物の拡散方法 | |
JPH0480880B2 (enrdf_load_stackoverflow) | ||
US4717443A (en) | Mass transport of indium phosphide | |
KR930004120B1 (ko) | 화합물 반도체 웨이퍼의 열처리방법 | |
US5259900A (en) | Reflux annealing device and method | |
US3287188A (en) | Method for producing a boron diffused sillicon transistor | |
JPS62122122A (ja) | 不純物拡散方法 | |
JP3412853B2 (ja) | 半導体結晶の製造装置 | |
JP2813711B2 (ja) | ▲iii▼−▲v▼化合物半導体結晶への亜鉛拡散方法 | |
JPS62143421A (ja) | 不純物拡散方法および拡散装置 | |
JPS6369219A (ja) | 分子線源用セル | |
US3755006A (en) | Diffused junction gap electroluminescent device | |
JPS6011801B2 (ja) | 半導体材料への不純物の熱拡散法 | |
JPS6122855B2 (enrdf_load_stackoverflow) | ||
JPS6249619A (ja) | 不純物の拡散方法 |