JPS61221362A - Apparatus for forming thin film by ionic vapor deposition - Google Patents

Apparatus for forming thin film by ionic vapor deposition

Info

Publication number
JPS61221362A
JPS61221362A JP6276285A JP6276285A JPS61221362A JP S61221362 A JPS61221362 A JP S61221362A JP 6276285 A JP6276285 A JP 6276285A JP 6276285 A JP6276285 A JP 6276285A JP S61221362 A JPS61221362 A JP S61221362A
Authority
JP
Japan
Prior art keywords
vapor deposition
substrate
thin film
source
evaporating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6276285A
Other languages
Japanese (ja)
Other versions
JPH0635653B2 (en
Inventor
Yasuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP60062762A priority Critical patent/JPH0635653B2/en
Publication of JPS61221362A publication Critical patent/JPS61221362A/en
Publication of JPH0635653B2 publication Critical patent/JPH0635653B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE: To extend the film forming region of a substrate and to prevent the dropping of a contaminant in an ion source by carrying out ion irradiation and vapor deposition on the substrate from positions above the substrate.
CONSTITUTION: An apparatus for forming a thin film by ionic vapor deposition is provided with an ion source 1 and an evaporating source 61. In the vacuum chamber 9 of the apparatus, ion irradiation and vapor deposition are carried out on a substrate 3 to form a thin film by ionic vapor deposition. At this time, a arc discharge evaporating source 6 which evaporates an evaporating material 5 by arc discharge is used as the evaporating source 61, and the ion source 1 and the arc discharge evaporating source 61 are positioned above the substrate 3. Thus, ion irradiation and vapor deposition are carried out on the substrate 3 from positions above the substrate 3.
COPYRIGHT: (C)1986,JPO&Japio
JP60062762A 1985-03-26 1985-03-26 Ion deposition thin film forming equipment Expired - Fee Related JPH0635653B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60062762A JPH0635653B2 (en) 1985-03-26 1985-03-26 Ion deposition thin film forming equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062762A JPH0635653B2 (en) 1985-03-26 1985-03-26 Ion deposition thin film forming equipment

Publications (2)

Publication Number Publication Date
JPS61221362A true JPS61221362A (en) 1986-10-01
JPH0635653B2 JPH0635653B2 (en) 1994-05-11

Family

ID=13209723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60062762A Expired - Fee Related JPH0635653B2 (en) 1985-03-26 1985-03-26 Ion deposition thin film forming equipment

Country Status (1)

Country Link
JP (1) JPH0635653B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582022A (en) * 1981-06-27 1983-01-07 Agency Of Ind Science & Technol Thin film formation
JPS583033A (en) * 1981-06-30 1983-01-08 Fujitsu Ltd Tree structure retrieval processor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582022A (en) * 1981-06-27 1983-01-07 Agency Of Ind Science & Technol Thin film formation
JPS583033A (en) * 1981-06-30 1983-01-08 Fujitsu Ltd Tree structure retrieval processor

Also Published As

Publication number Publication date
JPH0635653B2 (en) 1994-05-11

Similar Documents

Publication Publication Date Title
JPH024967A (en) Magnetron sputtering device and method therefor
JPH04224671A (en) Vacuum arc vapor-depositing device
JPS61221362A (en) Apparatus for forming thin film by ionic vapor deposition
JPS63109162A (en) Ion plating method and its device
JPS62112776A (en) Ion plating apparatus
JPH01230275A (en) Formation of superconductive thin film
JPS63114966A (en) Apparatus for producing thin film
JPS63107892A (en) Apparatus for producing thin oxide film
JPS6347362A (en) Ion plating device
JPS57106114A (en) Ion beam sputtering apparatus
JPH04246168A (en) Method and apparatus for forming compound thin film
JPS6289861A (en) Method and apparatus for bombardment vapor deposition of thin film
JPS61174371A (en) Thin film forming device
JPS63160343A (en) Evaporation system
JPS6293366A (en) Manufacture of boron nitride film
JPH01290767A (en) Device for producing multicomponent thin film
JPS6328861A (en) Surface treatment device
JPH0361371A (en) Thin film forming device
JPS61190064A (en) Formation of thin titanium nitride film
JPS62267464A (en) Apparatus for forming thin film by ionic vapor deposition
JPS59142841A (en) Vapor deposition device
JPS6227566A (en) Film forming device
JPS61117271A (en) Vapor deposition method with laser
JPS63103064A (en) Film forming device
JPS63134657A (en) Evaporation source for hollow cathode

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees