JPS6120352A - Formation of multilayer interconnection - Google Patents

Formation of multilayer interconnection

Info

Publication number
JPS6120352A
JPS6120352A JP14162984A JP14162984A JPS6120352A JP S6120352 A JPS6120352 A JP S6120352A JP 14162984 A JP14162984 A JP 14162984A JP 14162984 A JP14162984 A JP 14162984A JP S6120352 A JPS6120352 A JP S6120352A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
insulation
layer
formed
side
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14162984A
Inventor
Akio Kashiwanuma
Minoru Nakamura
Hajime Yagi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Abstract

PURPOSE:To prevent the insulation failure, accident of short circuits, and connection failure between wiring layers by a method wherein, after formation of a contact hole in the first insulation layer, the second insulation layer is formed; successively, the second insulation layer in the part other than the side of the stepwise difference of the first insulation layer is removed. CONSTITUTION:The lower wiring layers 2a and 2b made of aluminum are formed on a substrate 1. An interlayer insulation layer 3 is formed by CVD. The contact hole 5 is formed in the interlayer insulation layer 3 by RIE. Another insulation layer 6 is formed on the surface of the interlayer insulation layer 3 by CVD. The insulation layer 6 is so removed as to remain only on the side of the stepwise difference of the insulation layer 3. Cracks 4a and 4b are surely blocked with side insulation films 7, 7,...; besides, the contact hole 5 gets the inner surface gently inclined by the side insulation films 7, 7.... The upper wiring layers 8a and 8b are formed by the vacuum vapor deposition and photoetching of aluminum.
JP14162984A 1984-07-09 1984-07-09 Formation of multilayer interconnection Pending JPS6120352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14162984A JPS6120352A (en) 1984-07-09 1984-07-09 Formation of multilayer interconnection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14162984A JPS6120352A (en) 1984-07-09 1984-07-09 Formation of multilayer interconnection

Publications (1)

Publication Number Publication Date
JPS6120352A true true JPS6120352A (en) 1986-01-29

Family

ID=15296483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14162984A Pending JPS6120352A (en) 1984-07-09 1984-07-09 Formation of multilayer interconnection

Country Status (1)

Country Link
JP (1) JPS6120352A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190357A (en) * 1987-02-02 1988-08-05 Matsushita Electronics Corp Manufacture of semiconductor device
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111247A (en) * 1980-01-24 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
JPS594057A (en) * 1982-06-30 1984-01-10 Toshiba Corp Formation of contact hole

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111247A (en) * 1980-01-24 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
JPS594057A (en) * 1982-06-30 1984-01-10 Toshiba Corp Formation of contact hole

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190357A (en) * 1987-02-02 1988-08-05 Matsushita Electronics Corp Manufacture of semiconductor device
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures

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