JPS61199631A - Infrared heating furnace - Google Patents

Infrared heating furnace

Info

Publication number
JPS61199631A
JPS61199631A JP3878885A JP3878885A JPS61199631A JP S61199631 A JPS61199631 A JP S61199631A JP 3878885 A JP3878885 A JP 3878885A JP 3878885 A JP3878885 A JP 3878885A JP S61199631 A JPS61199631 A JP S61199631A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
temperature
infrared lamps
semiconductor wafer
made
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3878885A
Inventor
Takeo Hama
Masahiko Ichihashi
Katsumi Tsuda
Original Assignee
Shinku Riko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Abstract

PURPOSE:To make the temperature distribution of each sample uniform by independently and freely regulating the power supplied to each group of plural infrared lamps which are divided into plural groups. CONSTITUTION:A semiconductor wafer 6 is mounted on a sample boat which is mounted on a sample holder and inserted in a protection tube from the aperture at one end of the protection tube. The inside of the tube is made a vacuum. When a circuit device is operated, all infrared lamps light. The semiconductor wafer 6 is rapidly heated by the radiation of infrared rays, the temperature at one point of the wafer is detected by a thermocouple 14 and the infrared lamps 3 of a group facing to the thermocouple 14 and the infrared lamps 3 of the other groups are collectively PID controlled in order that the detected temperature becomes a temperature set by temperature programmer 13. The temperature at each position is supervised by the thermocouples 14 provided around the semiconductor wafer 6 and if the temperature is not made constant, it is made uniform by separately adjusting a control circuit 20.
JP3878885A 1985-03-01 1985-03-01 Infrared heating furnace Pending JPS61199631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3878885A JPS61199631A (en) 1985-03-01 1985-03-01 Infrared heating furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3878885A JPS61199631A (en) 1985-03-01 1985-03-01 Infrared heating furnace

Publications (1)

Publication Number Publication Date
JPS61199631A true true JPS61199631A (en) 1986-09-04

Family

ID=12535041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3878885A Pending JPS61199631A (en) 1985-03-01 1985-03-01 Infrared heating furnace

Country Status (1)

Country Link
JP (1) JPS61199631A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02183792A (en) * 1989-01-10 1990-07-18 Hiroshi Kawarazuka Defatting furnace
US6310328B1 (en) * 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US7133604B1 (en) * 2005-10-20 2006-11-07 Bergstein David M Infrared air heater with multiple light sources and reflective enclosure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925142A (en) * 1982-07-30 1984-02-09 Matsushita Electric Works Ltd Arc extinguishing device in circuit breaker
JPS5936927A (en) * 1982-08-25 1984-02-29 Hitachi Ltd Vapor phase growth apparatus for semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925142A (en) * 1982-07-30 1984-02-09 Matsushita Electric Works Ltd Arc extinguishing device in circuit breaker
JPS5936927A (en) * 1982-08-25 1984-02-29 Hitachi Ltd Vapor phase growth apparatus for semiconductor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02183792A (en) * 1989-01-10 1990-07-18 Hiroshi Kawarazuka Defatting furnace
US6310328B1 (en) * 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US6610967B2 (en) 1998-12-10 2003-08-26 Mattson Technology, Inc. Rapid thermal processing chamber for processing multiple wafers
US6727474B2 (en) 1998-12-10 2004-04-27 Mattson Technology, Inc. Rapid thermal processing chamber for processing multiple wafers
US7133604B1 (en) * 2005-10-20 2006-11-07 Bergstein David M Infrared air heater with multiple light sources and reflective enclosure
US7474842B2 (en) 2005-10-20 2009-01-06 Bergstein David M Thermal detonator with multiple light sources and reflective enclosure

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