JPS61195635U - - Google Patents

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Publication number
JPS61195635U
JPS61195635U JP7925485U JP7925485U JPS61195635U JP S61195635 U JPS61195635 U JP S61195635U JP 7925485 U JP7925485 U JP 7925485U JP 7925485 U JP7925485 U JP 7925485U JP S61195635 U JPS61195635 U JP S61195635U
Authority
JP
Japan
Prior art keywords
switching element
drive circuit
field effect
effect transistor
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7925485U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7925485U priority Critical patent/JPS61195635U/ja
Publication of JPS61195635U publication Critical patent/JPS61195635U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例を示す回路図、第2
図はその動作を示すタイムチヤート、第3図およ
び第5図はそれぞれ従来のドライブ回路の一例を
示す回路図、第4図および第6図はそれぞれ第3
図および第5図の回路の動作を示すタイムチヤー
トである。 5……オンオフ信号出力回路、6A,8A……
FET、11……パワトランジスタ、12……ド
ライブ回路、12B……ツエナーダイオード、1
2C,12D……トランジスタ。
Figure 1 is a circuit diagram showing one embodiment of the present invention;
The figure is a time chart showing its operation, Figures 3 and 5 are circuit diagrams each showing an example of a conventional drive circuit, and Figures 4 and 6 are circuit diagrams each showing an example of a conventional drive circuit.
6 is a time chart showing the operation of the circuit shown in FIG. 5 and FIG. 5...On/off signal output circuit, 6A, 8A...
FET, 11...Power transistor, 12...Drive circuit, 12B...Zener diode, 1
2C, 12D...transistor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電力用スイツチング素子をオフさせるための逆
バイアス電圧を他の直流電源から電界効果トラン
ジスタを通してあたえるスイツチング素子のドラ
イブ回路において、上記直流電源が立上るまでの
間上記電界効果トランジスタをバイパスさせるス
イツチング回路を設けたことを特徴とするスイツ
チング素子のドライブ回路。
In a switching element drive circuit that applies a reverse bias voltage from another DC power source through a field effect transistor to turn off a power switching element, a switching circuit is provided that bypasses the field effect transistor until the DC power source is turned on. A switching element drive circuit characterized by:
JP7925485U 1985-05-29 1985-05-29 Pending JPS61195635U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7925485U JPS61195635U (en) 1985-05-29 1985-05-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7925485U JPS61195635U (en) 1985-05-29 1985-05-29

Publications (1)

Publication Number Publication Date
JPS61195635U true JPS61195635U (en) 1986-12-05

Family

ID=30623995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7925485U Pending JPS61195635U (en) 1985-05-29 1985-05-29

Country Status (1)

Country Link
JP (1) JPS61195635U (en)

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