JPS61187275A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS61187275A
JPS61187275A JP2696385A JP2696385A JPS61187275A JP S61187275 A JPS61187275 A JP S61187275A JP 2696385 A JP2696385 A JP 2696385A JP 2696385 A JP2696385 A JP 2696385A JP S61187275 A JPS61187275 A JP S61187275A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
side
diffusion
layers
electrode
lt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2696385A
Inventor
Nobuyuki Takenaka
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

PURPOSE:To inhibit a hot-carrier effect and a short-channel effect by making differences among the diffusion depths of a low-concentration impurity and the diffusion depths of a high-concentration impurity in the direction of a channel for a MOSFET larger on the drain side than the source side. CONSTITUTION:A gate oxide film 2 and a polysilicon film 3 are formed on a P-type substrate 1, phosphorus is doped, and the gate electrode 3 with a vertical side wall is shaped through anisotropic etching. Phosphorus is implanted inclined only by an angle alpha to the drain side from the direction vertical to the substrate 1 while using the electrode 3 as a mask to form phosphorus atom implanting layers 24, 24', and N<-> diffusion layers 4 and 4' are shaped through heat treatment. Arsenic is implanted while the direction of implantation is inclined only by an angle beta to the source side while employing the gate electrode 3 as a mask to form arsenic atom implanting layers 25 and 25', and lastly N<+> diffusion layers 5 and 5' are shaped through heat treatment. Accordingly, a difference XD between the quantities of intrusions to the lower section of the gate electrode of the N<-> diffusion layer and the N<+> diffusion layer on the drain side can be made larger and XS on the source side smaller, thus inhibiting a hot-carrier effect and a short-channel effect.
JP2696385A 1985-02-14 1985-02-14 Semiconductor device Pending JPS61187275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2696385A JPS61187275A (en) 1985-02-14 1985-02-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2696385A JPS61187275A (en) 1985-02-14 1985-02-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS61187275A true true JPS61187275A (en) 1986-08-20

Family

ID=12207808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2696385A Pending JPS61187275A (en) 1985-02-14 1985-02-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS61187275A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021355A (en) * 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021355A (en) * 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor

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