JPS61171246U - - Google Patents
Info
- Publication number
- JPS61171246U JPS61171246U JP5374785U JP5374785U JPS61171246U JP S61171246 U JPS61171246 U JP S61171246U JP 5374785 U JP5374785 U JP 5374785U JP 5374785 U JP5374785 U JP 5374785U JP S61171246 U JPS61171246 U JP S61171246U
- Authority
- JP
- Japan
- Prior art keywords
- gas
- heat treatment
- semiconductor wafer
- treatment apparatus
- floating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 claims 16
- 238000010438 heat treatment Methods 0.000 claims 9
- 238000007664 blowing Methods 0.000 claims 2
- 238000000137 annealing Methods 0.000 description 2
Description
第１図は本考案の第１実施例によるランプアニ
ール装置を示す断面図、第２図は本考案の第２実
施例によるランプアニール装置の浮上式ウエハー
ホルダー及びガス導入管を示す断面図、第３図は
本考案の変形例による浮上式ウエハー搬送板を示
す断面図、第４図は従来のウエハーホルダーを示
す断面図、第５Ａ図及び第５Ｂ図は従来の浮上式
ウエハーホルダーを示す平面図及びその―線
の断面図である。
なお、図面に用いた符号において、１……半導
体ウエハー、３……浮上式ウエハーホルダー、５
，６……ランプ光源、７……炉心管、８……浮上
式ウエハー搬送板、９……ガス導入管である。
FIG. 1 is a sectional view showing a lamp annealing apparatus according to a first embodiment of the present invention, and FIG. 2 is a sectional view showing a floating wafer holder and a gas introduction tube of a lamp annealing apparatus according to a second embodiment of the invention. FIG. 3 is a sectional view showing a floating wafer transfer plate according to a modified example of the present invention, FIG. 4 is a sectional view showing a conventional wafer holder, and FIGS. 5A and 5B are plan views showing a conventional floating wafer holder. and a cross-sectional view of the line. In addition, in the symbols used in the drawings, 1...semiconductor wafer, 3... floating type wafer holder, 5...
, 6... lamp light source, 7... furnace core tube, 8... floating wafer transfer plate, 9... gas introduction tube.
Claims (1)
た状態で熱処理を行うようにした熱処理装置にお
いて、 上記半導体ウエハーを上記ガスフローにより浮
上させた状態で上記熱処理装置への上記半導体ウ
エハーの出し入れを行うようにしたことを特徴と
する熱処理装置。 ２ 複数のガス流出孔を有しかつこれらのガス流
出孔と連通する中空の引き出し棒がその一端に設
けられている浮上式ウエハーホルダーを備え、 上記引き出し棒内にガスを流して上記ガス流出
孔からこのガスを噴出させることにより上記半導
体ウエハーを浮上させた状態で、 上記引き出し棒により熱処理装置への上記半導
体ウエハーの出し入れを行うようにした実用新案
登録請求の範囲第１項に記載の熱処理装置。 ３ 複数のガス流出孔を有しかつその一端にガス
導入管が設けられている中空の浮上式ウエハー搬
送板を備え、 上記ガス導入管からこの浮上式ウエハー搬送板
内にガスを流して上記ガス流出孔からこのガスを
噴出させることにより半導体ウエハーを浮上させ
た状態で、 上記浮上式ウエハー搬送板を傾斜させて上記半
導体ウエハーをこの浮上式ウエハー搬送板に沿つ
て移動させることにより熱処理装置への上記半導
体ウエハーの出し入れを行うようにした実用新案
登録請求の範囲第１項に記載の熱処理装置。[Claims for Utility Model Registration] 1. In a heat treatment apparatus that performs heat treatment while the semiconductor wafer is floated by the gas flow, the semiconductor wafer is transferred to the heat treatment apparatus while the semiconductor wafer is floated by the gas flow. A heat treatment apparatus characterized in that wafers are loaded and unloaded. 2. A floating wafer holder having a plurality of gas outflow holes and having a hollow pull-out rod at one end that communicates with the gas outflow holes, the floating wafer holder having a plurality of gas outflow holes and having a hollow pull-out rod connected to the gas outflow holes at one end, and causing gas to flow through the pull-out rod to remove the gas outflow holes. The heat treatment apparatus according to claim 1, wherein the semiconductor wafer is taken in and out of the heat treatment apparatus by the pull-out rod while the semiconductor wafer is levitated by blowing out this gas from the heat treatment apparatus. . 3. A hollow floating wafer transfer plate having a plurality of gas outlet holes and a gas introduction pipe provided at one end thereof is provided, and the gas is caused to flow from the gas introduction pipe into the floating wafer transfer plate. While the semiconductor wafer is levitated by blowing out this gas from the outflow hole, the floating wafer transfer plate is tilted and the semiconductor wafer is moved along the floating wafer transfer plate, thereby transferring the semiconductor wafer to the heat treatment equipment. The heat treatment apparatus according to claim 1, wherein the semiconductor wafer is taken in and taken out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5374785U JPS61171246U (en) | 1985-04-11 | 1985-04-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5374785U JPS61171246U (en) | 1985-04-11 | 1985-04-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61171246U true JPS61171246U (en) | 1986-10-24 |
Family
ID=30574900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5374785U Pending JPS61171246U (en) | 1985-04-11 | 1985-04-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61171246U (en) |
-
1985
- 1985-04-11 JP JP5374785U patent/JPS61171246U/ja active Pending
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