JPS6116009B2 - - Google Patents

Info

Publication number
JPS6116009B2
JPS6116009B2 JP54024951A JP2495179A JPS6116009B2 JP S6116009 B2 JPS6116009 B2 JP S6116009B2 JP 54024951 A JP54024951 A JP 54024951A JP 2495179 A JP2495179 A JP 2495179A JP S6116009 B2 JPS6116009 B2 JP S6116009B2
Authority
JP
Japan
Prior art keywords
photodiode
voltage
time
switch element
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54024951A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55116226A (en
Inventor
Tetsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2495179A priority Critical patent/JPS55116226A/ja
Priority to US06/118,908 priority patent/US4348110A/en
Publication of JPS55116226A publication Critical patent/JPS55116226A/ja
Publication of JPS6116009B2 publication Critical patent/JPS6116009B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2495179A 1979-03-03 1979-03-03 Discharging current integration-type photodetector Granted JPS55116226A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2495179A JPS55116226A (en) 1979-03-03 1979-03-03 Discharging current integration-type photodetector
US06/118,908 US4348110A (en) 1979-03-03 1980-02-06 Charging current integrating type photodetectors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2495179A JPS55116226A (en) 1979-03-03 1979-03-03 Discharging current integration-type photodetector

Publications (2)

Publication Number Publication Date
JPS55116226A JPS55116226A (en) 1980-09-06
JPS6116009B2 true JPS6116009B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-04-26

Family

ID=12152298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2495179A Granted JPS55116226A (en) 1979-03-03 1979-03-03 Discharging current integration-type photodetector

Country Status (2)

Country Link
US (1) US4348110A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS55116226A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020050205A1 (ja) 2018-09-03 2020-03-12 富士フイルム株式会社 ゲル形成キット、ゲルおよびゲルの製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57189028A (en) * 1981-05-15 1982-11-20 Matsushita Electric Ind Co Ltd Auto zero photometric circuit
JPS5870133A (ja) * 1981-10-22 1983-04-26 Nec Corp 光信号検出回路
JPS5875037A (ja) * 1981-10-30 1983-05-06 Nec Corp 光信号検出回路
JPS5879348A (ja) * 1981-11-05 1983-05-13 Nec Corp 光信号検出回路
JPS5880945A (ja) * 1981-11-09 1983-05-16 Nec Corp 光信号検出回路
JPS6111622A (ja) * 1984-06-27 1986-01-20 Hitachi Ltd 分光光度計
US4666301A (en) * 1985-05-08 1987-05-19 E. I. Du Pont De Nemours And Company Radiation responsive integrating amplifier
US5141314A (en) * 1991-03-01 1992-08-25 Thermo Jarrell Ash Corporation Spectroanalytical system
US6816803B1 (en) 2000-06-02 2004-11-09 Exactus, Inc. Method of optical pyrometry that is independent of emissivity and radiation transmission losses
US6647350B1 (en) 2000-06-02 2003-11-11 Exactus, Inc. Radiometric temperature measurement system
US6799137B2 (en) 2000-06-02 2004-09-28 Engelhard Corporation Wafer temperature measurement method for plasma environments
US20060190211A1 (en) * 2001-07-23 2006-08-24 Schietinger Charles W In-situ wafer parameter measurement method employing a hot susceptor as radiation source for reflectance measurement
US20030036877A1 (en) * 2001-07-23 2003-02-20 Schietinger Charles W. In-situ wafer parameter measurement method employing a hot susceptor as a reflected light source
JP2009500634A (ja) * 2005-07-08 2009-01-08 エフシーシー，エルエルシー ディー／ビー／エイ ファースト グロウス キャピタル 検査用ストリップ読取装置システムおよび方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547542A (en) * 1968-03-01 1970-12-15 Trw Inc High scanning speed spectrometer
US3732491A (en) * 1971-01-21 1973-05-08 American Optical Corp Laser energy monitor circuit
US3934161A (en) * 1974-04-29 1976-01-20 Texas Instruments Incorporated Electronic shutter for a charge-coupled imager
US4000418A (en) * 1975-11-26 1976-12-28 General Electric Company Apparatus for storing and retrieving analog and digital signals
US4146332A (en) * 1977-04-19 1979-03-27 The United States Of America As Represented By The Secretary Of The Navy Spectrometer with electronic readout

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020050205A1 (ja) 2018-09-03 2020-03-12 富士フイルム株式会社 ゲル形成キット、ゲルおよびゲルの製造方法

Also Published As

Publication number Publication date
JPS55116226A (en) 1980-09-06
US4348110A (en) 1982-09-07

Similar Documents

Publication Publication Date Title
JPS6116009B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA1310505C (en) Avalanche photodiode quenching circuit
CA2393514A1 (en) Photodetector and method for detecting radiation
Davidovic et al. High dynamic range background light suppression for a TOF distance measurement sensor in 180nm CMOS
US4847483A (en) Device for measuring light intensity received by a photosensor
JPH04168876A (ja) 積分器及び画像読取装置
JP3111585B2 (ja) 光センサー装置
JP2002286504A (ja) 光センサ回路およびこれを用いた光学式変位測長器
JPH0325186Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2003065847A (ja) 受光回路
JPH0537313A (ja) 光検出回路
SU1696894A1 (ru) Фотометр
JPH04364496A (ja) 半導体検出器用前置増幅器
JPS5460855A (en) Measurement device for deep level of semiconductor device
SU1122899A1 (ru) Способ регистрации излучени фотодиодом и устройство дл его осуществлени
SU1100588A1 (ru) Устройство дл измерени вольт-фарадных характеристик
SU1545092A1 (ru) Фотометр
SU757994A1 (ru) УСТРОЙСТВО ИЗМЕРЕНИЯ ПАРАМЕТРОВ ОДНОКРАТНЫХ УДАРНЫХ ИМПУЛЬСОВ,.„757994(51)М. Кл.1 * 3 С 01 К 19/04(53) УДК
Long More Facts about Sensing Elements
SU1025291A1 (ru) Устройство дл измерени параметров поверхностных состо ний на границе раздела в полупроводниковых гетеропереходах
JPH0381091B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SU158165A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SU1571681A1 (ru) Аналоговое запоминающее устройство
SU1019369A1 (ru) Измеритель электростатического зар да
SU1046967A1 (ru) Мозаичный преобразователь излучени