JPS61158622A - 透明導電膜の製造方法及びその装置 - Google Patents
透明導電膜の製造方法及びその装置Info
- Publication number
- JPS61158622A JPS61158622A JP27766884A JP27766884A JPS61158622A JP S61158622 A JPS61158622 A JP S61158622A JP 27766884 A JP27766884 A JP 27766884A JP 27766884 A JP27766884 A JP 27766884A JP S61158622 A JPS61158622 A JP S61158622A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- target
- substrate
- conductive film
- targets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 43
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 30
- 239000011787 zinc oxide Substances 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 49
- 238000004544 sputter deposition Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27766884A JPS61158622A (ja) | 1984-12-29 | 1984-12-29 | 透明導電膜の製造方法及びその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27766884A JPS61158622A (ja) | 1984-12-29 | 1984-12-29 | 透明導電膜の製造方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61158622A true JPS61158622A (ja) | 1986-07-18 |
| JPH0350367B2 JPH0350367B2 (enrdf_load_stackoverflow) | 1991-08-01 |
Family
ID=17586632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27766884A Granted JPS61158622A (ja) | 1984-12-29 | 1984-12-29 | 透明導電膜の製造方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61158622A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002114598A (ja) * | 2000-10-03 | 2002-04-16 | Toppan Printing Co Ltd | 透明導電性材料およびその製造方法 |
| JP2003516473A (ja) * | 1999-12-03 | 2003-05-13 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | 改良されたスパッタリングターゲット及びその製法並びに使用 |
| JP2015120980A (ja) * | 2012-06-29 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 酸化膜の作製方法 |
-
1984
- 1984-12-29 JP JP27766884A patent/JPS61158622A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003516473A (ja) * | 1999-12-03 | 2003-05-13 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | 改良されたスパッタリングターゲット及びその製法並びに使用 |
| JP4851672B2 (ja) * | 1999-12-03 | 2012-01-11 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | 改良されたスパッタリングターゲット及びその製法並びに使用 |
| JP2002114598A (ja) * | 2000-10-03 | 2002-04-16 | Toppan Printing Co Ltd | 透明導電性材料およびその製造方法 |
| JP2015120980A (ja) * | 2012-06-29 | 2015-07-02 | 株式会社半導体エネルギー研究所 | 酸化膜の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0350367B2 (enrdf_load_stackoverflow) | 1991-08-01 |