JPS61154143A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61154143A
JPS61154143A JP27686184A JP27686184A JPS61154143A JP S61154143 A JPS61154143 A JP S61154143A JP 27686184 A JP27686184 A JP 27686184A JP 27686184 A JP27686184 A JP 27686184A JP S61154143 A JPS61154143 A JP S61154143A
Authority
JP
Japan
Prior art keywords
layer
substrate
deposited
groove
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27686184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0558578B2 (enrdf_load_stackoverflow
Inventor
Seiichi Yoda
養田 聖一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP27686184A priority Critical patent/JPS61154143A/ja
Publication of JPS61154143A publication Critical patent/JPS61154143A/ja
Publication of JPH0558578B2 publication Critical patent/JPH0558578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP27686184A 1984-12-27 1984-12-27 半導体装置の製造方法 Granted JPS61154143A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27686184A JPS61154143A (ja) 1984-12-27 1984-12-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27686184A JPS61154143A (ja) 1984-12-27 1984-12-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61154143A true JPS61154143A (ja) 1986-07-12
JPH0558578B2 JPH0558578B2 (enrdf_load_stackoverflow) 1993-08-26

Family

ID=17575430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27686184A Granted JPS61154143A (ja) 1984-12-27 1984-12-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61154143A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005119443A (ja) * 2003-10-16 2005-05-12 T S Tec Kk 自動車用シートベルト

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005119443A (ja) * 2003-10-16 2005-05-12 T S Tec Kk 自動車用シートベルト

Also Published As

Publication number Publication date
JPH0558578B2 (enrdf_load_stackoverflow) 1993-08-26

Similar Documents

Publication Publication Date Title
KR100567022B1 (ko) 반도체소자의 트렌치를 이용한 소자분리막 형성방법
JP3773785B2 (ja) 半導体装置の製造方法
JPS61154143A (ja) 半導体装置の製造方法
KR100209714B1 (ko) 반도체소자의 격리막 및 이의 형성방법
JP2008124399A (ja) 半導体装置の製造方法
JPH03234041A (ja) 半導体装置の製造方法
JPS61119056A (ja) 半導体装置の製造方法
KR19990021366A (ko) 반도체 장치의 소자 분리방법
JPS63204746A (ja) 半導体装置の製造方法
KR100503344B1 (ko) 반도체 소자의 셀로우 트렌치 소자분리막 제조 방법
KR100416813B1 (ko) 반도체소자의필드산화막형성방법
JP2003158177A (ja) 半導体装置およびその製造方法
JPH1154499A (ja) 半導体装置の製造方法
KR940009578B1 (ko) 반도체 장치 및 그 제조방법
KR100801724B1 (ko) 반도체 소자의 소자 분리막 형성 방법
JPH01291430A (ja) 半導体装置の製造方法
KR970013189A (ko) 반도체 집적회로의 소자격리방법
JPH02132830A (ja) 選択酸化方法
JPS5931215B2 (ja) 絶縁層の形成方法
JPS62273750A (ja) 半導体装置およびその製造方法
JPH05218191A (ja) 幅の異なる素子間分離領域を有する半導体装置の製造方法
JPH06163531A (ja) 半導体装置における素子分離領域の形成方法
JPS58169935A (ja) 半導体装置の製造方法
JPS6279625A (ja) 半導体装置の製造方法
KR19990006076A (ko) 반도체 소자의 소자분리막 제조방법

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees