JPS6115363A - Manufacture of shift register ic - Google Patents

Manufacture of shift register ic

Info

Publication number
JPS6115363A
JPS6115363A JP13520484A JP13520484A JPS6115363A JP S6115363 A JPS6115363 A JP S6115363A JP 13520484 A JP13520484 A JP 13520484A JP 13520484 A JP13520484 A JP 13520484A JP S6115363 A JPS6115363 A JP S6115363A
Authority
JP
Japan
Prior art keywords
patterned
films
electrodes
glow discharge
amorphous si
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13520484A
Other versions
JPH0812922B2 (en
Inventor
Koichi Hiranaka
Tadahisa Yamaguchi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13520484A priority Critical patent/JPH0812922B2/en
Publication of JPS6115363A publication Critical patent/JPS6115363A/en
Publication of JPH0812922B2 publication Critical patent/JPH0812922B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

PURPOSE:To realize the titled device capable of high-speed action with a large area by using thin film transistors. CONSTITUTION:Gate electrodes 2 are evaporated on a glass substrate 1 and patterned; then, gate insulation films 3, amorphous Si films 4, and channel protection films 7 are continuously formed by the method of glow discharge decomposition without breaking vacuum. Next, source and drain electrodes 6 are patterned, and contact holes and a capacitor insulation film 8 are formed by using a normal photolighorgaphy. Then, the above-mentioned source or drain electrode is connected to the insulation film by forming metallic electrodes 9. Thereafter, in order to form a load resistor, a phosphorus-doped amorphous Si film 10 is prepared by using the method of glow discharge decomposition and then patterned.
JP13520484A 1984-07-02 1984-07-02 Manufacturing method of a shift register integrated circuits Expired - Lifetime JPH0812922B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13520484A JPH0812922B2 (en) 1984-07-02 1984-07-02 Manufacturing method of a shift register integrated circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13520484A JPH0812922B2 (en) 1984-07-02 1984-07-02 Manufacturing method of a shift register integrated circuits

Publications (2)

Publication Number Publication Date
JPS6115363A true JPS6115363A (en) 1986-01-23
JPH0812922B2 JPH0812922B2 (en) 1996-02-07

Family

ID=15146283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13520484A Expired - Lifetime JPH0812922B2 (en) 1984-07-02 1984-07-02 Manufacturing method of a shift register integrated circuits

Country Status (1)

Country Link
JP (1) JPH0812922B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958205A (en) * 1985-03-29 1990-09-18 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing the same
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958205A (en) * 1985-03-29 1990-09-18 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing the same
US5137841A (en) * 1985-03-29 1992-08-11 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a thin film transistor using positive and negative photoresists
US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same

Also Published As

Publication number Publication date
JPH0812922B2 (en) 1996-02-07

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