JPS61137370A - Manufacture of mos semiconductor device - Google Patents
Manufacture of mos semiconductor deviceInfo
- Publication number
- JPS61137370A JPS61137370A JP25929484A JP25929484A JPS61137370A JP S61137370 A JPS61137370 A JP S61137370A JP 25929484 A JP25929484 A JP 25929484A JP 25929484 A JP25929484 A JP 25929484A JP S61137370 A JPS61137370 A JP S61137370A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- gate electrode
- metal atoms
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 125000004429 atoms Chemical group 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 125000004430 oxygen atoms Chemical group O* 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Abstract
PURPOSE:To obtain a MOS semiconductor device of double insulating film structure having a uniform performance by implanting ions of metal atoms of Al, Ti and oxygen atoms into the surface layer of an oxide film coated on a substrate when forming a gate electrode in the semiconductor device,and forming the gate electrode on an oxide layer obtained by heat treating. CONSTITUTION:A thick field oxide film 2 laid on a P<+> type channel cut region 1A is formed on the surface edge of a P<-> type Si substrate 1, and a thin gate oxide film 3 is coated on the exposed surface 2a surrounded by the film 2. Then, ions of at least one metal atoms of Al, Ti, Ta, W, Zr, Hf, Pb and oxygen atoms are implanted into the surface of the films 3, 2, heat treated at 1,000 deg.C for 10min in N2 atmosphere to form a thin oxide layer 4 of metal atoms on the surface layers of the films 3, 2. Thereafter, polycrystalline Si layer is accumulated on the film 4, etched to allow a gate electrode 5 to remain through the film 4a, source region 1B and drain region 1C are diffused at both sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25929484A JPS61137370A (en) | 1984-12-10 | 1984-12-10 | Manufacture of mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25929484A JPS61137370A (en) | 1984-12-10 | 1984-12-10 | Manufacture of mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61137370A true JPS61137370A (en) | 1986-06-25 |
Family
ID=17332077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25929484A Pending JPS61137370A (en) | 1984-12-10 | 1984-12-10 | Manufacture of mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61137370A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08288507A (en) * | 1995-04-20 | 1996-11-01 | Nec Corp | Semiconductor device and manufacturing method thereof |
| EP0962986A2 (en) * | 1998-05-28 | 1999-12-08 | Lucent Technologies Inc. | MOS transistors with improved gate dielectrics |
| KR20020003029A (en) * | 2000-06-30 | 2002-01-10 | 박종섭 | Method for making a semi-conductor device |
| WO2002001622A3 (en) * | 2000-06-26 | 2002-04-11 | Univ North Carolina State | Novel non-crystalline oxides for use in microelectronic, optical, and other applications |
| WO2002063668A1 (en) * | 2001-02-06 | 2002-08-15 | Matsushita Electric Industrial Co., Ltd. | Method of forming insulating film and method of producing semiconductor device |
| JP2006332179A (en) * | 2005-05-24 | 2006-12-07 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
| JP2009529789A (en) * | 2006-03-09 | 2009-08-20 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
-
1984
- 1984-12-10 JP JP25929484A patent/JPS61137370A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08288507A (en) * | 1995-04-20 | 1996-11-01 | Nec Corp | Semiconductor device and manufacturing method thereof |
| EP0962986A2 (en) * | 1998-05-28 | 1999-12-08 | Lucent Technologies Inc. | MOS transistors with improved gate dielectrics |
| EP0962986A3 (en) * | 1998-05-28 | 2000-12-27 | Lucent Technologies Inc. | MOS transistors with improved gate dielectrics |
| WO2002001622A3 (en) * | 2000-06-26 | 2002-04-11 | Univ North Carolina State | Novel non-crystalline oxides for use in microelectronic, optical, and other applications |
| KR20020003029A (en) * | 2000-06-30 | 2002-01-10 | 박종섭 | Method for making a semi-conductor device |
| JP2002314074A (en) * | 2001-02-06 | 2002-10-25 | Matsushita Electric Ind Co Ltd | Method for forming insulation film and method for manufacturing semiconductor device |
| WO2002063668A1 (en) * | 2001-02-06 | 2002-08-15 | Matsushita Electric Industrial Co., Ltd. | Method of forming insulating film and method of producing semiconductor device |
| US6734069B2 (en) | 2001-02-06 | 2004-05-11 | Matsushita Electric Industrial Co., Ltd. | Method of forming a high dielectric constant insulating film and method of producing semiconductor device using the same |
| JP2006332179A (en) * | 2005-05-24 | 2006-12-07 | Renesas Technology Corp | Semiconductor device and its manufacturing method |
| KR101237153B1 (en) * | 2005-05-24 | 2013-02-25 | 르네사스 일렉트로닉스 가부시키가이샤 | Semiconductor device and manufacturing method thereof |
| US8501558B2 (en) | 2005-05-24 | 2013-08-06 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of the same |
| US8823110B2 (en) | 2005-05-24 | 2014-09-02 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of the same |
| JP2009529789A (en) * | 2006-03-09 | 2009-08-20 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH04102317A (en) | Manufacture of semiconductor device | |
| JPS61137370A (en) | Manufacture of mos semiconductor device | |
| JPS60136376A (en) | Semiconductor device and manufacture thereof | |
| JPS6247162A (en) | Manufacture of insulated gate field effect transistor | |
| JPS6257255A (en) | Manufacture of compound semiconductor device | |
| JPH03265143A (en) | Manufacture of thin film transistor | |
| JPS59205761A (en) | Manufacture of mos type semiconductor device | |
| JPS61137369A (en) | Manufacture of semiconductor device | |
| JPS6156460A (en) | Semiconductor device and manufacture thereof | |
| JPS6068655A (en) | Manufacture of mos transistor | |
| JPS60225473A (en) | Manufacture of semiconductor device | |
| JPS60110163A (en) | Manufacture of mos transistor | |
| JPS6034068A (en) | Manufacture of metallic oxide film semiconductor field- effect transistor | |
| JPS5748268A (en) | Manufacture of mos semiconductor device | |
| KR960002083B1 (en) | Making method of mosfet | |
| JPS603156A (en) | Manufacture of semiconductor device | |
| JPS60133757A (en) | Manufacture of thin film transistor | |
| JPS57177566A (en) | Schottky barrier gate type field effect transistor | |
| JPH02244715A (en) | Manufacture of semiconductor device | |
| JPS6265465A (en) | Manufacture of insulated-gate type semiconductor device | |
| JPS57207375A (en) | Manufacture of semiconductor device | |
| JPS5992573A (en) | Manufacture of insulated gate type field effect transistor | |
| JPS6089973A (en) | Manufacture of semiconductor device | |
| JPS60195973A (en) | Manufacture of semiconductor device | |
| JPS63316479A (en) | Thin film transistor and manufacture thereof |