JPS6113317B2 - - Google Patents

Info

Publication number
JPS6113317B2
JPS6113317B2 JP57129925A JP12992582A JPS6113317B2 JP S6113317 B2 JPS6113317 B2 JP S6113317B2 JP 57129925 A JP57129925 A JP 57129925A JP 12992582 A JP12992582 A JP 12992582A JP S6113317 B2 JPS6113317 B2 JP S6113317B2
Authority
JP
Japan
Prior art keywords
circuit
magnetic bubble
bubble memory
power
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57129925A
Other languages
Japanese (ja)
Other versions
JPS5922284A (en
Inventor
Shigeru Takagi
Toshihiro Hoshi
Shigeru Takai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57129925A priority Critical patent/JPS5922284A/en
Publication of JPS5922284A publication Critical patent/JPS5922284A/en
Publication of JPS6113317B2 publication Critical patent/JPS6113317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)

Description

【発明の詳細な説明】 (a) 発明の技術分野 本発明は磁気バブルメモリ装置の電源制御方式
に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a power control system for a magnetic bubble memory device.

(b) 技術の背景 バブルメモリ素子は磁性薄膜の膜面に垂直バイ
アス磁界をかけて得られる磁気バブルの有無を2
進情報の1,0に対応させ、この磁気バブルによ
る信号列にバイアス磁界の局部的な勾配を与えて
シフトさせ、所定のバブル伝送略を転送する構成
を有し、情報の保持に電源を不要とする不揮発性
の大容量シリアル磁性メモリ素子である。
(b) Background of the technology Bubble memory elements are made by applying a perpendicular bias magnetic field to the surface of a magnetic thin film to detect the presence or absence of magnetic bubbles.
It has a structure that corresponds to 1 and 0 of the binary information, shifts the signal train by applying a local gradient of the bias magnetic field to the signal train caused by the magnetic bubble, and transfers a predetermined bubble transmission abbreviation, and does not require a power supply to retain information. This is a nonvolatile, large-capacity, serial magnetic memory device.

(c) 従来技術と問題点 磁気バブルメモリ装置で通常用いられる構成と
してメジヤマイナループ方式があげられる。磁気
バブルメモリ装置は磁気バブルメモリ素子とこれ
を駆動支援するための諸回路部分よりなる。磁気
バブルメモリ素子においてその磁気バブル伝播面
と並行面上に回転する磁界を複相のコイルを駆動
して1回転毎に一定方向に歩進することによりデ
ータ伝播ループ(以下マイナループ)上あるいは
データ書込み/読取りループ(以下メジヤルー
プ)を伝播させていく。第1図の従来および本発
明の一実施例における磁気バブル素子の構成図を
示す。第1図において1,1aは磁気バブル発生
器、2,2aは書込みメジヤループ、3は書込
器、4,4aはマイナループ、5,5aは読取り
メジヤループ、6は磁気バブル複製器、7,7a
は検出器、11は書込回路接続端子、12は複製
回路接続端子、13は検出読取回路接続端子およ
び14は消去回路接続端子である。発生器1で発
生された磁気バブルは書込みメジヤループ2,2
a上を伝播していき、書込器T3の各位置に揃つ
たとき端子11に電流が流され書込器T3が一斉
に開かれて書込メジヤループ2,2a上の磁気バ
ルブは各マイナループ4,4a上の旧情報と揃つ
て置換され各マイナループ4,4aに書込まれ
る。その後マイナループ4,4a上の磁気バブル
は回転磁界に従つて循環する。またマイナループ
4,4a上の磁気バブルは複製器B6の各位置に
揃つた時端子12に電流を流してマイナループ
4,4a上の磁気バブルは一斉に読取りメジヤル
ープ5,5aに複製される。読取りメジヤループ
5,5a上に複製された磁気バブルは検出器D
7,7aに達して拡大されると共に例えば磁気抵
抗素子によつて構成される検出読取素子によりバ
ブルの有無が電気信号の1,0に変換され読取端
子13より送出される。また不要の磁気バブルは
消去信号端子14よりループに与える通電の垂直
反磁界によつて消去することが出来る。
(c) Prior Art and Problems A typical configuration commonly used in magnetic bubble memory devices is the medium-minor loop method. A magnetic bubble memory device consists of a magnetic bubble memory element and various circuits for driving and supporting the magnetic bubble memory element. In a magnetic bubble memory element, a magnetic field that rotates on a plane parallel to the magnetic bubble propagation plane drives a multi-phase coil and advances in a fixed direction every rotation, thereby creating a data propagation loop (hereinafter referred to as a "minor loop") or data writing. / Propagate the reading loop (hereinafter referred to as the "medium loop"). FIG. 2 shows a configuration diagram of the conventional magnetic bubble element in FIG. 1 and an embodiment of the present invention. In FIG. 1, 1 and 1a are magnetic bubble generators, 2 and 2a are write major loops, 3 are writers, 4 and 4a are minor loops, 5 and 5a are read major loops, 6 are magnetic bubble replicators, and 7 and 7a are
1 is a detector, 11 is a write circuit connection terminal, 12 is a replication circuit connection terminal, 13 is a detection/read circuit connection terminal, and 14 is an erase circuit connection terminal. The magnetic bubble generated by generator 1 is connected to the write medium loop 2, 2.
a, and when they are aligned at each position of the writer T3, a current is applied to the terminal 11, the writers T3 are opened all at once, and the magnetic valves on the write major loops 2, 2a are connected to each minor loop 4. , 4a are replaced together and written to each minor loop 4, 4a. Thereafter, the magnetic bubbles on the minor loops 4, 4a circulate according to the rotating magnetic field. Further, when the magnetic bubbles on the minor loops 4, 4a are aligned at each position of the duplicator B6, a current is applied to the terminal 12, and the magnetic bubbles on the minor loops 4, 4a are read all at once and are duplicated in the major loops 5, 5a. The magnetic bubble replicated on the reading medium loop 5, 5a is detected by the detector D.
7 and 7a and are enlarged, and the presence or absence of the bubble is converted into electrical signals 1 and 0 by a detection reading element constituted by, for example, a magnetoresistive element, and sent from the reading terminal 13. Further, unnecessary magnetic bubbles can be erased by applying a current to the loop through a perpendicular demagnetizing field from the erase signal terminal 14.

磁気バブルメモリ装置は更に第2図の従来にお
ける磁気バブルメモリ装置によるブロツク図に示
す通り単数または複数の磁気バブルメモリ素子1
0を駆動するため種々の回路を備えている。図に
おいて10は磁気バブルメモリ素子、20は制御
部、20aは制御回路、20bはタイミング回
路、21は回転磁界HR駆動回路、22はフアク
シヨン駆動回路、23は検出回路および24は電
源スイツチである。制御回路20aは外部からの
各制御信号を受信して解読し、後述する各回路へ
のタイミング回路20aを介しての波形制御、マ
イナループ4,4a上の磁気バブルの位置の管理
同期制御、磁気バブルメモリ素子に書込まれてい
る欠陥マイナループの位置情報を保持し、読取
り、書込みに際して欠陥位置に関する無効処理作
業を行う。タイミング回路20bは制御回路20
aの制御データに従い予め設定されたシーケンス
に従うタイミング制御を行う。HR駆動回路は磁
気バブルメモリ素子における磁気バブルを歩進さ
せる面内回転磁界を発生するための例えば2相コ
イルを駆動する回路である。フアンクシヨン駆動
回路22はタイミング回路20bのタイミング信
号に従つて書込、消去、複製信号を磁気バブルメ
モリ素子10に送出し各機能を行わせる。検出回
路23は磁気バブルメモリ素子10よりの検出信
号を論理レベルに増幅整形して制御回路20aに
送出する。電源スイツチ24は以上の回路動作に
必要な単数または複数の電源ソースを開閉する。
こゝで従来の磁気バブルメモリ装置において電源
スイツチ24をオンにするとすべての各回路に電
源が供給され動作状態になる。この時磁気バブル
メモリ装置はシリアルメモリであるため書込み読
取り動作を行う前初期化操作としてデータをマイ
ナループ4,4aの順環するどの位置に書込むか
あるいはあるかを検出するため電源投入と共に予
め用意して記憶させてあるデータの位置通常頭出
しの例えば0番地の位置を示すマーカ用マイナル
ープの磁気バブルを検出して制御回路20aに備
えた磁気バブルの位置の管理制御機能と位置合せ
を行う。また同時に磁気バブルメモリ素子の欠陥
マイナループの位置情報を読出して制御回路20
a内に記憶保持する。
The magnetic bubble memory device further includes one or more magnetic bubble memory elements 1 as shown in the block diagram of a conventional magnetic bubble memory device in FIG.
Various circuits are provided to drive 0. In the figure, 10 is a magnetic bubble memory element, 20 is a control unit, 20a is a control circuit, 20b is a timing circuit, 21 is a rotating magnetic field H R drive circuit, 22 is a function drive circuit, 23 is a detection circuit, and 24 is a power switch. . The control circuit 20a receives and decodes each control signal from the outside, and controls the waveform via a timing circuit 20a to each circuit described later, manages and synchronizes the positions of the magnetic bubbles on the minor loops 4 and 4a, and performs magnetic bubble control. It holds the position information of the defective minor loop written in the memory element, and performs invalidation processing regarding the defect position when reading or writing. The timing circuit 20b is the control circuit 20
Timing control is performed according to a preset sequence according to the control data of a. The H R drive circuit is a circuit that drives, for example, a two-phase coil to generate an in-plane rotating magnetic field that advances the magnetic bubble in the magnetic bubble memory element. The function drive circuit 22 sends write, erase, and copy signals to the magnetic bubble memory element 10 in accordance with the timing signal from the timing circuit 20b to cause the magnetic bubble memory element 10 to perform each function. The detection circuit 23 amplifies and shapes the detection signal from the magnetic bubble memory element 10 to a logic level and sends it to the control circuit 20a. The power switch 24 opens and closes one or more power sources necessary for the above circuit operation.
In the conventional magnetic bubble memory device, when the power switch 24 is turned on, power is supplied to all the circuits and the circuits become operational. At this time, since the magnetic bubble memory device is a serial memory, it is prepared in advance when the power is turned on in order to detect in which position in the order of the minor loops 4 and 4a the data is written as an initialization operation before performing the write/read operation. A magnetic bubble of a minor loop for a marker indicating the position of the data stored in the normal cue, for example, address 0, is detected and aligned with the magnetic bubble position management control function provided in the control circuit 20a. At the same time, the control circuit 20 reads the position information of the defective minor loop of the magnetic bubble memory element.
Stored in a.

以上の電源投入時における初期化動作を行つて
磁気バブルメモリ装置はレデイとなり外部よりの
書込み読出しに伴うアクセスの制御信号が来る迄
待機状態となる。制御回路20aは外部より制御
信号を受けるとHR駆動回路21、フアンクシヨ
ン駆動回路22および検出回路23へタイミング
回路20b経由制御信号を送出し、制御回路20
aは情報位置の管理、磁気バブルの書込み、検
出、消去およびマイナループ欠陥の制御等を行つ
て動作を終了させ再び待機状態となる。
By performing the above-mentioned initialization operation when the power is turned on, the magnetic bubble memory device becomes ready and enters a standby state until an access control signal for writing/reading is received from the outside. When the control circuit 20a receives a control signal from the outside, it sends a control signal to the H R drive circuit 21, function drive circuit 22, and detection circuit 23 via the timing circuit 20b.
A performs information position management, magnetic bubble writing, detection, erasing, minor loop defect control, etc., completes its operation, and returns to a standby state.

こゝで待機状態においては磁気バブルメモリ素
子は電源を必要としない不揮発性メモリであり、
他のICメモリ等と異なりデータの保持に電力を
必要としないが磁気バブルメモリ装置としては周
辺の各回路に電源が供給されていて電力を消費し
ている。この待機状態においては一旦電源を切断
することが出来るが、外部からアクセスを受けた
ときに制御信号に従つて書込み読取り動作する迄
には前述の初期化動作を必要とし、アクセスが大
きく遅れる欠点があつた。
In the standby state, the magnetic bubble memory element is a non-volatile memory that does not require a power supply.
Unlike other IC memories, it does not require power to hold data, but as a magnetic bubble memory device, power is supplied to each peripheral circuit, which consumes power. In this standby state, the power can be temporarily turned off, but the above-mentioned initialization operation is required before the write/read operation can be performed according to the control signal when access is received from the outside, which has the disadvantage of significantly delaying access. It was hot.

(d) 発明の目的 本発明の目的は上記の欠点を除去するため待機
状態における電力消費の大部分を切断して省電力
化を行つてもアクセスを大きく遅らせることのな
い手段を提供しようとするものである。
(d) Purpose of the Invention The purpose of the present invention is to eliminate the above-mentioned drawbacks by cutting off most of the power consumption in the standby state to provide a means for saving power without significantly delaying access. It is something.

(e) 発明の構成 この目的は単数または複数の磁気バブルメモリ
素子および該素子を駆動する周辺部各回路ならび
に制御部回路を備えた磁気バブルメモリ装置にお
いて、磁気バブルメモリ素子の回転磁界駆動回
路、フアンクシヨン駆動回路、磁気バブル検出回
路および制御部のタイミング回路と該各回路に要
する単数または複数の第1の電源供給手段、残り
の制御部の制御回路と該制御回路に要する単数ま
たは複数の第2の電源供給手段の2電源系列を構
成し、制御回路は外部よりのアクセスに従い電源
系列別に順序または同時に電源の印加・切断制御
する手段を備えたことを特徴とする磁気バブルメ
モリ装置の電源制御方式を提供することによつて
達成することが出来る。
(e) Structure of the Invention The object is to provide a magnetic bubble memory device comprising one or more magnetic bubble memory elements, peripheral circuits for driving the elements, and a control circuit, including a rotating magnetic field drive circuit for the magnetic bubble memory elements; A function drive circuit, a magnetic bubble detection circuit, a timing circuit for the control section, one or more first power supply means required for each circuit, a control circuit for the remaining control section, and one or more second power supply means required for the control circuit. A power supply control system for a magnetic bubble memory device, characterized in that the power supply means constitutes two power supply series, and the control circuit is provided with means for sequentially or simultaneously controlling application and disconnection of power for each power supply series according to external access. This can be achieved by providing

(f) 発明の実施例 以下本発明の一実施例について図面を参照し
つゝ説明する。第3図は本発明の一実施例におけ
る磁気バブルメモリ装置の電源制御方式によるブ
ロツク図を示す。図において10は磁気バブルメ
モリ素子、20は制御部、20aは制御回路、2
0bはタイミング回路、21はHR駆動回路、2
2はフアンクシヨン駆動回路、23は検出回路、
24は電源スイツチおよび25は印加・切断回路
である。図の各符号において第2図と共通符号の
構成部材は前出と共通の機能を有する。第3図に
示すように本発明において電源の供給は2系列に
分割されて構成され、その第1系列は制御回路2
0aの制御に従つて動作する印加・切断回路を経
由して電源を供給されるHR駆動回路21、フア
ンクシヨン駆動回路22、検出回路23およびタ
イミング回路20bのグループであり、第2系列
は電源スイツチ24の開閉によつて直接電源を供
給される制御回路20aおよび切断・印加回路2
5のグループである。こゝで磁気バブルメモリ装
置の電源投入は従来と同様に当初全回路に電源を
供給して制御回路20aは初期動作を行わせる。
以後待機状態では制御回路20aは印加・切断回
路25を作動させて電源供給を切断する。そして
外部よりアクセスの都度制御回路20aは印加・
切断回路25により休止中の各回路に電源供給を
行つて従来と同様に全回路に電源を供給し書込
み、読取り動作を行わせる。このようにすれば待
機状態においては第1系列における各回路の電力
消費を0として節減し、制御回路20aの制御に
よる全回路電源投入時には従来と同様制御回路2
0aにおいて磁気バブルの位置情報やマイナルー
プの欠陥情報が保持されており全機能が作動する
ので電源供給により立上り後従来と同様書込み、
読取り動作を行うことが出来る。
(f) Embodiment of the invention An embodiment of the invention will be described below with reference to the drawings. FIG. 3 shows a block diagram of a power supply control system for a magnetic bubble memory device according to an embodiment of the present invention. In the figure, 10 is a magnetic bubble memory element, 20 is a control section, 20a is a control circuit, 2
0b is a timing circuit, 21 is an H R drive circuit, 2
2 is a function drive circuit, 23 is a detection circuit,
24 is a power switch and 25 is an application/cutoff circuit. In each reference numeral in the figure, constituent members having the same reference numerals as those in FIG. 2 have the same functions as those described above. As shown in FIG. 3, in the present invention, the power supply is divided into two systems, the first system being connected to the control circuit 2.
The group includes the H R drive circuit 21, the function drive circuit 22, the detection circuit 23, and the timing circuit 20b, which are supplied with power via the application/cutoff circuit that operates according to the control of the power switch 0a. The control circuit 20a and the cutting/applying circuit 2 are directly supplied with power by opening and closing 24.
There are 5 groups. Here, when powering on the magnetic bubble memory device, as in the conventional case, power is initially supplied to all circuits and the control circuit 20a performs an initial operation.
Thereafter, in the standby state, the control circuit 20a operates the application/cutoff circuit 25 to cut off the power supply. Then, each time an access is made from the outside, the control circuit 20a applies
The disconnection circuit 25 supplies power to each circuit that is inactive, and supplies power to all circuits to perform write and read operations as in the conventional case. In this way, in the standby state, the power consumption of each circuit in the first series is reduced to 0, and when power is turned on for all circuits under the control of the control circuit 20a, the control circuit 20a
At 0a, the position information of the magnetic bubble and the defect information of the minor loop are retained and all functions are activated, so after power supply starts up, write as before.
Read operations can be performed.

(g) 発明の効果 以上説明したように本発明によれば磁気バブル
メモリ装置の未使用時におけるデータの保持用電
力が不必要という特徴に加えて、装置の動作中に
おいても従来と同様に外部からのアクセスに対し
て書込み、読取り動作を損うことなく待機中は回
路の電力消費を節減出来る電源制御方式が得られ
るので有用である。
(g) Effects of the Invention As explained above, according to the present invention, in addition to the feature that the magnetic bubble memory device does not require power for data retention when it is not in use, it also has the feature that the magnetic bubble memory device does not require any power for data retention when the device is not in use. This is useful because it provides a power control scheme that can reduce the power consumption of the circuit during standby without impairing write and read operations for accesses from.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来および本発明の一実施例における
磁気バブルメモリ素子の構成図、第2図は従来に
おける磁気バブルメモリ装置によるブロツク図お
よび第3図は本発明の一実施例における磁気バブ
ルメモリ装置の電源制御方式によるブロツク図を
示す。 図において10は磁気バブルメモリ素子、20
aは制御回路、20bはタイミング回路、21は
回転磁界駆動回路、22はフアンクシヨン駆動回
路、23は検出回路、24は電源スイツチおよび
25は印加切断回路である。
FIG. 1 is a block diagram of a conventional magnetic bubble memory device and an embodiment of the present invention, FIG. 2 is a block diagram of a conventional magnetic bubble memory device, and FIG. 3 is a magnetic bubble memory device according to an embodiment of the present invention. A block diagram of the power supply control method is shown. In the figure, 10 is a magnetic bubble memory element, 20
a is a control circuit, 20b is a timing circuit, 21 is a rotating magnetic field drive circuit, 22 is a function drive circuit, 23 is a detection circuit, 24 is a power switch, and 25 is an application/cutoff circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 単数または複数の磁気バブルメモリ素子およ
び該素子を駆動する周辺部各回路ならびに制御部
回路を備えた磁気バブルメモリ装置において、磁
気バブルメモリ素子の回転磁界駆動回路、フアン
クシヨン駆動回路、磁気バブル検出回路および制
御部のタイミング回路と該各回路に要する単数ま
たは複数の第1の電源供給手段、残りの制御部の
制御回路と該制御回路に要する単数または複数の
第2の電源供給手段の2電源系列を構成し、制御
回路は外部よりのアクセスに従い電源系列別に順
序または同時に電源の印加・切断制御する手段を
備えたことを特徴とする磁気バブルメモリ装置の
電源制御方式。
1. In a magnetic bubble memory device comprising one or more magnetic bubble memory elements, peripheral circuits for driving the elements, and a control circuit, a rotating magnetic field drive circuit, a function drive circuit, and a magnetic bubble detection circuit for the magnetic bubble memory element are provided. and a timing circuit of the control section and one or more first power supply means required for each circuit, and a control circuit of the remaining control section and one or more second power supply means required for the control circuit. 1. A power control system for a magnetic bubble memory device, characterized in that the control circuit is provided with means for sequentially or simultaneously controlling application and disconnection of power for each power supply series in accordance with external access.
JP57129925A 1982-07-26 1982-07-26 Method for controlling power supply of magnetic bubble memory device Granted JPS5922284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57129925A JPS5922284A (en) 1982-07-26 1982-07-26 Method for controlling power supply of magnetic bubble memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57129925A JPS5922284A (en) 1982-07-26 1982-07-26 Method for controlling power supply of magnetic bubble memory device

Publications (2)

Publication Number Publication Date
JPS5922284A JPS5922284A (en) 1984-02-04
JPS6113317B2 true JPS6113317B2 (en) 1986-04-12

Family

ID=15021799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57129925A Granted JPS5922284A (en) 1982-07-26 1982-07-26 Method for controlling power supply of magnetic bubble memory device

Country Status (1)

Country Link
JP (1) JPS5922284A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152579A (en) * 1983-02-18 1984-08-31 Fujitsu Ltd Magnetic bubble storage device

Also Published As

Publication number Publication date
JPS5922284A (en) 1984-02-04

Similar Documents

Publication Publication Date Title
US6295577B1 (en) Disc storage system having a non-volatile cache to store write data in the event of a power failure
US7606970B2 (en) Hybrid disk drive and method of controlling data therein
US4159412A (en) Magnetic bubble memory chip synchronization and redundancy
JPH1125002A (en) Storage device, methods for writing and reading out data and recording medium
US4070651A (en) Magnetic domain minor loop redundancy system
US4090251A (en) Bubble memory redundancy storage
JPS6113317B2 (en)
US4458334A (en) Redundancy map storage for bubble memories
JPS5858753B2 (en) Mejiya/minor loop bubble memory system
US4519049A (en) Magnetic bubble memory having auxiliary storage loops
JPS6160506B2 (en)
JPS5927031B2 (en) magnetic bubble storage device
JPS599109B2 (en) magnetic valve storage device
JPS5827912B2 (en) magnetic bubble storage device
JPH02799B2 (en)
JPH08221333A (en) Ic card device
JPS6136315B2 (en)
JPS59180787A (en) Printer
JPS6111989A (en) Drive method of magnetic bubble method
JPS6095650A (en) Magnetic disk device
JPS6425358A (en) Phase pull-in control circuit
JPH05282857A (en) Memory card device
JPS6136320B2 (en)
JPH0793912A (en) Optical disk recording/reproducing apparatus
JPS6160503B2 (en)