JPS61131483A - 不揮発性メモリの書込み法 - Google Patents

不揮発性メモリの書込み法

Info

Publication number
JPS61131483A
JPS61131483A JP59252607A JP25260784A JPS61131483A JP S61131483 A JPS61131483 A JP S61131483A JP 59252607 A JP59252607 A JP 59252607A JP 25260784 A JP25260784 A JP 25260784A JP S61131483 A JPS61131483 A JP S61131483A
Authority
JP
Japan
Prior art keywords
voltage
gate electrode
writing
control gate
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59252607A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0533546B2 (enrdf_load_stackoverflow
Inventor
Yutaka Hayashi
豊 林
Masaaki Kamiya
昌明 神谷
Yoshikazu Kojima
芳和 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Japan Science and Technology Agency
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Seiko Instruments Inc
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17239718&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS61131483(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Agency of Industrial Science and Technology, Seiko Instruments Inc, Research Development Corp of Japan filed Critical Agency of Industrial Science and Technology
Priority to JP59252607A priority Critical patent/JPS61131483A/ja
Publication of JPS61131483A publication Critical patent/JPS61131483A/ja
Publication of JPH0533546B2 publication Critical patent/JPH0533546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Non-Volatile Memory (AREA)
JP59252607A 1984-11-29 1984-11-29 不揮発性メモリの書込み法 Granted JPS61131483A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59252607A JPS61131483A (ja) 1984-11-29 1984-11-29 不揮発性メモリの書込み法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59252607A JPS61131483A (ja) 1984-11-29 1984-11-29 不揮発性メモリの書込み法

Publications (2)

Publication Number Publication Date
JPS61131483A true JPS61131483A (ja) 1986-06-19
JPH0533546B2 JPH0533546B2 (enrdf_load_stackoverflow) 1993-05-19

Family

ID=17239718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59252607A Granted JPS61131483A (ja) 1984-11-29 1984-11-29 不揮発性メモリの書込み法

Country Status (1)

Country Link
JP (1) JPS61131483A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121087A (en) * 1996-06-18 2000-09-19 Conexant Systems, Inc. Integrated circuit device with embedded flash memory and method for manufacturing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102563A (ja) * 1981-12-15 1983-06-18 Agency Of Ind Science & Technol 不揮発性半導体メモリ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102563A (ja) * 1981-12-15 1983-06-18 Agency Of Ind Science & Technol 不揮発性半導体メモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121087A (en) * 1996-06-18 2000-09-19 Conexant Systems, Inc. Integrated circuit device with embedded flash memory and method for manufacturing same

Also Published As

Publication number Publication date
JPH0533546B2 (enrdf_load_stackoverflow) 1993-05-19

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