JPS61121760U - - Google Patents

Info

Publication number

JPS61121760U

JPS61121760U JP505385U JP505385U JPS61121760U JP S61121760 U JPS61121760 U JP S61121760U JP 505385 U JP505385 U JP 505385U JP 505385 U JP505385 U JP 505385U JP S61121760 U JPS61121760 U JP S61121760U

Authority

JP

Japan

Prior art keywords

conductivity type

hole

diffused

diffusion

resistor

Prior art date

1985-01-17

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
• 229910052710 silicon Inorganic materials 0.000 claims description 7
• 239000010703 silicon Substances 0.000 claims description 7
• 238000009792 diffusion process Methods 0.000 claims description 5
• 239000004065 semiconductor Substances 0.000 claims description 4
• 238000010586 diagram Methods 0.000 description 3
• 239000013078 crystal Substances 0.000 description 1
• 238000005530 etching Methods 0.000 description 1
• 230000035945 sensitivity Effects 0.000 description 1
• 239000000758 substrate Substances 0.000 description 1