JPS61110761A - High vacuum ion plating method - Google Patents
High vacuum ion plating methodInfo
- Publication number
- JPS61110761A JPS61110761A JP23179884A JP23179884A JPS61110761A JP S61110761 A JPS61110761 A JP S61110761A JP 23179884 A JP23179884 A JP 23179884A JP 23179884 A JP23179884 A JP 23179884A JP S61110761 A JPS61110761 A JP S61110761A
- Authority
- JP
- Japan
- Prior art keywords
- cavity
- ion plating
- gas
- plating method
- ionization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は高真空イオンプレーティング法の改良に朋す
るものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to improvements in high vacuum ion plating methods.
〈従来の技術〉
従来行われている金属被膜のイオンプレーティング法は
蒸着金属以外にルガスなどの気体を導入し、直流あるい
は高周波の気体放電によってプラズマを発生させ、金属
蒸気および気体のイオン化を行い、そのイオンを被覆用
基板に衝突させることにより、高い密着性とその被膜の
結晶性を制御することを行っていた。<Conventional technology> The conventional ion plating method for metal coatings involves introducing a gas such as gas in addition to the deposited metal, generating plasma by direct current or high frequency gas discharge, and ionizing the metal vapor and gas. By colliding the ions with the coating substrate, high adhesion and crystallinity of the coating were controlled.
〈発明が解決しようとする問題点〉
しかしながら、上記の方法ではArガスなどの気体を導
入することにより、蒸着法により得られる被膜の利点、
高純度およびキメの細かさなどが失なわれる欠点があっ
た。<Problems to be solved by the invention> However, in the above method, by introducing a gas such as Ar gas, the advantages of the film obtained by the vapor deposition method,
There was a drawback that high purity and fine texture were lost.
(二のため、kなどのガスを用いずに、金属蒸気だけの
イオンを用いてコーティングすることが求められている
が、直流放電は1o′Torr以上、高周波放電は10
Torr以上でないとグロー放電が行なわれないため、
ルガスなどの異種ガスを用いずに金属蒸気を十分にイオ
ン化することができなかった。(For the second reason, coating is required using only metal vapor ions without using gas such as K, but DC discharge is 10'Torr or more, and high frequency discharge is 10'Torr or more.
Glow discharge will not occur unless the temperature is Torr or higher, so
It was not possible to sufficiently ionize metal vapor without using a foreign gas such as gas.
また蒸気圧とArガス圧および放電パワーが複雑に絡み
合っていて、独立に制御できないため、金属蒸気のイオ
ン化率を制御することはむづがしいとされている。Furthermore, it is said that it is difficult to control the ionization rate of metal vapor because vapor pressure, Ar gas pressure, and discharge power are intricately intertwined and cannot be controlled independently.
く問題点を解決するための手段〉
この発明は、上記の点に鑑みてArガスなどの気体を用
いることなく金属蒸気だけのイオン化ブレーティングを
可能にするべく検討の結果、この発明に至ったものであ
る。Means for Solving the Problems In view of the above points, this invention was developed as a result of studies to enable ionization blating of only metal vapor without using gas such as Ar gas. It is something.
く作 用〉
即ち、この発明は図面に示すように、真空槽A中のイオ
ン化促進キヤとティ1をセラミック製とし、このキャビ
ティ1をヒーター3でコーティングするルツボ4中の金
属の融点の1.2〜1.5倍に加熱することにより、イ
オン化促進キャビティ1内の小ざな空間に1616’r
orrの蒸気圧を発生させ、その部分に高周波コイル
2で金属蒸気だけでグロー放電プラズマを実現し、基板
5に対して高い密着性と被膜の結晶性制御を可能にでき
るだけのイオン化を行なうことを特徴とするものである
。Namely, as shown in the drawings, the present invention has an ionization promoting cavity 1 in a vacuum chamber A made of ceramic, and a heater 3 coating the cavity 1 with a melting point of 1. By heating 2 to 1.5 times, 1616'r
orr vapor pressure is generated, and a high-frequency coil 2 is used in that part to realize a glow discharge plasma using only metal vapor, and to perform ionization as much as possible to achieve high adhesion to the substrate 5 and control of crystallinity of the film. This is a characteristic feature.
図中6は電子銃である。6 in the figure is an electron gun.
この発明はイオン化促進キャビティをセラミック製とし
て、このキャビティを被覆金属の融点の1.2〜1.5
倍に加熱しうるようにしたので、Atなとの異種ガスを
用いることなくグロー放電プラズマを発生させることが
でき、その結果、高純度でキメが細かく、高密着性で結
晶性をコントロールしたコーテイング膜が得られるとい
う利点を有するのである。In this invention, the ionization-promoting cavity is made of ceramic, and the cavity is made of ceramic with a melting point of 1.2 to 1.5 of the melting point of the coating metal.
Since it can be heated twice as much, it is possible to generate glow discharge plasma without using a different gas such as At, resulting in a coating with high purity, fine texture, high adhesion, and controlled crystallinity. This has the advantage that a film can be obtained.
なお、この発明のイオンプレーティング法を適用しうる
ちのとしては、金属の蒸着及びイオンプレーティングに
て得られる製品がある。The ion plating method of the present invention can be applied to products obtained by metal vapor deposition and ion plating.
また、この発明でイオン化促進キャビティをセラミック
製とする場合のセラミック材質としては、焼結体、多結
晶体、単結晶体、非晶質体がよく、例えばサファイア、
石英ガラ、スなどが用いられる。In addition, in the case where the ionization promotion cavity is made of ceramic in the present invention, the ceramic material is preferably a sintered body, a polycrystalline body, a single crystalline body, or an amorphous body, such as sapphire,
Quartz glass, glass, etc. are used.
く実 施 例〉
以下、この発明の方法をアルミニウムのイオンプレーテ
ィング法について行った結果を説明する。EXAMPLES The results of applying the method of the present invention to aluminum ion plating will be described below.
イオン化促進キャビティをサファイア多結晶によるセラ
ミック製とし、これを900℃に加熱し、キャビティ内
のM蒸気圧を約IMorrとし、高周波グロー放電を安
定に実現して、基板のF@NL合金に5μmのイオンプ
レーティング法を行った。The ionization promoting cavity is made of ceramic made of sapphire polycrystal, heated to 900°C, the M vapor pressure inside the cavity is set to about I Morr, stable high frequency glow discharge is realized, and a 5 μm thick film is applied to the F@NL alloy of the substrate. Ion plating method was performed.
そして単純蒸着と比較したしころ、プレッシャークツカ
ーテストでは約10倍の寿命を有するとともにヌープ硬
度も同等の値を示すことがわかった。When compared with simple vapor deposition, it was found that the pressure Kutzker test showed that it had about 10 times the lifespan and had the same Knoop hardness.
図面はこの発明の方法を実施する装置の概略図である。
1・・・イオン化促進キャビティ
2・・・高周波コイル 3・・・・・・・・・ヒータ
ー4・・・ルツボ 5・・・基板 6・・・・・・
・・・電子銃A・・・・・・・・・真空槽The drawing is a schematic diagram of an apparatus implementing the method of the invention. 1... Ionization promotion cavity 2... High frequency coil 3... Heater 4... Crucible 5... Substrate 6...
・・・Electron gun A・・・・・・Vacuum chamber
Claims (1)
、該キャビティを被覆金属の融点の1.2〜1.5倍に
加熱することによって、被覆金属の10^−^5〜10
^−^2Torrの蒸気圧とし、これを高周波放電にて
基板に被覆せしめることを特徴とする高真空イオンプレ
ーティング法。The ionization promoting cavity in the vacuum chamber is made of ceramic, and by heating the cavity to 1.2 to 1.5 times the melting point of the coated metal, the melting point of the coated metal is 10^-^5 to 10%.
A high vacuum ion plating method characterized in that the vapor pressure is set to 2 Torr and the vapor pressure is coated on a substrate by high frequency discharge.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23179884A JPS61110761A (en) | 1984-11-01 | 1984-11-01 | High vacuum ion plating method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23179884A JPS61110761A (en) | 1984-11-01 | 1984-11-01 | High vacuum ion plating method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61110761A true JPS61110761A (en) | 1986-05-29 |
Family
ID=16929185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23179884A Pending JPS61110761A (en) | 1984-11-01 | 1984-11-01 | High vacuum ion plating method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61110761A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0529665A2 (en) * | 1991-08-28 | 1993-03-03 | Sumitomo Electric Industries, Limited | Ceramics-type vacuum vessel and a method of manufacturing thereof |
-
1984
- 1984-11-01 JP JP23179884A patent/JPS61110761A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0529665A2 (en) * | 1991-08-28 | 1993-03-03 | Sumitomo Electric Industries, Limited | Ceramics-type vacuum vessel and a method of manufacturing thereof |
US5603788A (en) * | 1991-08-28 | 1997-02-18 | Sumitomo Electric Industries, Ltd. | Method of manufacturing a ceramics-type vacuum vessel |
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