JPS61108130A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To make it feasible to form thin films very rapidly by a method wherein a light source of ultraviolet rays to activate the surface of substrate and an oscillator of laser beams to excite reaction gas are provided. CONSTITUTION:The surface of substrate 5 heated by a heater 3 at low temperature is irradiated with ultraviolet rays from a light source 22 to activate the substrate 5. Besides, reaction gas 4 is flowed from an inlet 7 to a substrate 5 to be irradiated with laser beams 12 for photochemical reaction. Resultantly, thin films with even thickness may be formed very rapidly on the substrate 5.

Description

Detailed Description of the Invention [Industrial Field of Application] This invention relates to a method of photochemically decomposing a reactive gas to form a thin film on a substrate.
apour deposition: hereinafter referred to as photoexcitation CV
The present invention relates to a semiconductor manufacturing apparatus that forms a thin film using a method (referred to as the D method).

[Conventional technology]

FIG. 5 shows the basic configuration of an apparatus using the conventional photoexcitation CVD method.

In Fig. 5, ■ is a reaction chamber, 2 is a light source, 3 is a heater for heating the substrate, 4 is a reaction gas, 5 is a substrate, 6 is a light entrance window made of a light-transmitting material, 7 is a reaction gas supply port, and 8 is a Reaction gas outlet, 9
is a stand on which the substrate 5 is placed.

Next, the operation will be explained.

In this device, a reaction gas 4 is introduced into a reaction chamber 1 from a supply lower, a photochemical reaction is caused in the reaction chamber 1 by a light beam projected from an entrance window 6, and a thin film is formed on a substrate 5 heated at a low temperature by a heater 3. It is being done.

In order to cause a photochemical reaction in a reactive gas, ultraviolet rays of a specific wavelength that are resonantly absorbed by the reactive gas are projected onto the reactive gas to excite the reactive gas to cause a photochemical reaction, or
Or a gas that has a sensitizing effect, such as mercury vapor, in the reaction gas! A method is adopted in which the sensitizing gas is mixed into the amount of II and excited by ultraviolet rays of a specific wavelength, thereby promoting the excitation of the reaction gas and causing a photochemical reaction.

Conventionally, light sources not only emit ultraviolet rays of a specific wavelength determined by the reactive gas or sensitizing gas to excite the reactive gas, but also irradiate the surface of the substrate with ultraviolet rays to activate the substrate surface. It also plays a role in improving the quality of the thin film formed on the substrate and increasing the speed of forming the thin film on the substrate.

[Problem that the invention seeks to solve]

Conventional devices are constructed as described above, but in order to increase the speed of forming a thin film on a substrate, it is necessary to provide a light source that emits extremely strong ultraviolet rays at a specific wavelength specific to the reaction gas, or It was necessary to mix a sensitizing gas into the reaction gas to accelerate the photochemical reaction. However, it is currently difficult to find a practical light source with such a large output and long life, and the method of promoting photochemical reactions by mixing mercury vapor etc. into the reaction gas as a sensitizing gas does not allow There was a problem in that the quality of the formed thin film deteriorated, such as mercury being mixed into the thin film formed.

This invention was made to solve these conventional problems, and aims to provide a semiconductor manufacturing apparatus that can form high-quality thin films on substrates at high speed by promoting photochemical reactions of reactive gases. This is the purpose.

[Failure to solve the problem]

A semiconductor manufacturing apparatus according to the present invention is provided with an ultraviolet light source for irradiating ultraviolet light to activate a substrate surface, and a laser oscillation device for oscillating and outputting laser light for exciting a reactive gas.

In addition to the ultraviolet light source and the laser oscillation device, a semiconductor manufacturing apparatus according to another aspect of the present invention is provided with a table moving mechanism for horizontally moving the substrate in a direction perpendicular to the laser beam. A reactant gas supply nozzle and a discharge nozzle are provided facing each other so as to sandwich the laser beam projected onto the substrate.

[Effect]

In this invention, the substrate surface is activated with ultraviolet rays,
A reactive gas flowing over the substrate is excited by laser light, and a thin film is formed on the surface of the substrate at high speed.

Further, in another aspect of the present invention, since the substrate directly under the reactive gas flowing in a direction perpendicular to the laser beam moves in the same direction as the flow of the gas, a thin film with a uniform thickness is formed over the entire surface of the substrate. be done.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the first invention of the present application, and FIG. 2 is a sectional view taken along line nn in FIG. 1. In both figures, 1 is a reaction chamber, 5 is a substrate, and 22 is an ultraviolet light source, which outputs ultraviolet light for irradiating the surface of the substrate 5 and activating it. 3 is a heater that heats the substrate 5 at a low temperature; 4 is a reactive gas; 6 is an ultraviolet incident window made of a light-transmitting material; 7 is a reactive gas supply port; 8 is a reactive gas outlet; 9 is a table on which the substrate 5 is placed. , 10 is a laser beam entrance window extending from a light-transmitting material, 11 is a laser beam oscillation device, and 12 is a laser beam for excitation of the reactant gas oscillated by the laser beam oscillation device 11.

In this device, a substrate 5 is heated at a low temperature by a heater 3.
The surface of the substrate 5 is irradiated with ultraviolet light from the light source 22, and the surface of the substrate 5 is
is activated. On the other hand, the reaction gas 4 is flowed onto the substrate 5 from the supply lower, is irradiated on the substrate 5 by the laser beam 12, and is uniformly excited on the substrate 5'2 to cause a photochemical reaction. A high-quality thin film of uniform thickness is quickly formed on top.

3 is a sectional view of a semiconductor manufacturing apparatus according to an embodiment of the second invention of the present application, and FIG. 4 is a sectional view taken along the line II-IV in FIG. 3. In both figures, the same reference numerals as in FIG. 1.2 indicate the same or corresponding parts, and 13 and 14 are provided facing each other so as to sandwich the laser beam 12, and the reactant gas 4 is directed in a direction perpendicular to the beam 12. reaction gas supply nozzle and discharge nozzle for flowing;
19 is a table movable in a direction perpendicular to the laser beam beam 12; 20 is a table moving mechanism for moving the table 19; this is a ball screw 23 screwed into a connector 19a fixed to the table 19; and a motor 24 that rotationally drives this.

In this device, the reaction gas 4 passes through the reaction gas supply lower and exits the reaction gas supply nozzle 13 so as to surround the laser light beam 12 and extend in a direction perpendicular to the beam 12.
Since the reactive gas 4 is caused to flow onto the substrate 5 by a length L2 which is slightly wider than the width L1 of the laser beam 1 on the substrate 5.
The concentration of the reaction gas 4 becomes almost uniform within the range irradiated by the laser beam 12 to cause a photochemical reaction, and as a result, the concentration of the reaction gas 4 becomes almost uniform within the range where the laser beam 12 is irradiated and a photochemical reaction occurs. A thin film of uniform thickness is formed.

In addition, because this reaction gas flows efficiently over a short distance,
This also reduces the problem that the reaction gas diffuses into unnecessary parts of the reaction chamber and a film is deposited on the light entrance window 6.10, thereby blocking the incidence of light.

Furthermore, the movable table 19 can continue to form a uniform thin film on the substrate 5 even if the laser beam 1 is distributed.

Furthermore, since the moving direction of the moving table 19 is also along the flow direction of the reaction gas 4, moving the table 19 means that subtle changes in the reaction gas concentration in the flow direction of the reaction gas can be caused by the formation of a thin film. This makes it possible to eliminate uneven film thickness.

Note that the above 1. In the second invention, the light source 22 is for activating the surface of the substrate 5 and improving the quality of the formed thin film, and is not for causing a photochemical reaction in the reaction gas 4, so it is different from the light source of the conventional device. The light source does not need to have only a wavelength unique to each reactant gas, nor does it need to be a large light source with a high output like conventional light sources.

〔Effect of the invention〕

As described above, according to the semiconductor manufacturing apparatus according to the present invention, in addition to the ultraviolet light source that oscillates ultraviolet rays for activating the substrate, a laser beam oscillation device for excitation of the reactive gas is provided, so that high-quality thin films can be manufactured with high quality. In addition, supply and exhaust nozzles for flowing the reaction gas in a direction perpendicular to the laser beam and a moving table that moves in that direction are provided, so that a uniform film can be formed over the entire surface of the substrate. It is possible to form thick thin films, and has the effect of efficiently manufacturing semiconductors with higher precision.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional front view of a semiconductor manufacturing apparatus according to an embodiment of the first invention of the present application, and FIG. 2 is a cross-sectional view taken along the line ■-■ in FIG.
FIG. 3 is a cross-sectional front view of a semiconductor manufacturing apparatus according to an embodiment of the second invention of the present application, FIG. 4 is a cross-sectional view taken along the line IV-IV in FIG. 3, and FIG. 5 is a cross-sectional side view of a conventional semiconductor manufacturing apparatus. It is a diagram. In the figure, 1 is a reaction chamber, 22 is an ultraviolet light source, 4 is a reaction gas, 5 is a substrate, 11 is a laser beam oscillation device, 12 is a laser beam beam, 13 is a reaction gas supply nozzle, 14 is a reaction gas discharge nozzle, 2o is the table moving mechanism. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (2)

[Claims] (1) In semiconductor manufacturing equipment that photochemically decomposes the reactive gas to form a thin film on a substrate placed in a reactive gas in a reaction chamber, ultraviolet rays are output to the substrate to activate the substrate surface. 1. A semiconductor manufacturing apparatus comprising: an ultraviolet light source for irradiating the reaction gas; and a laser oscillation device for outputting laser light for causing a photochemical reaction in the reaction gas. (2) In semiconductor manufacturing equipment that photochemically decomposes the reactive gas to form a thin film on a substrate placed in a reactive gas in a reaction chamber, ultraviolet rays are output to the substrate to activate the substrate surface. an ultraviolet light source for irradiation, a laser oscillation device for outputting irradiation with a laser beam for causing a photochemical reaction in the reaction gas, and a table moving mechanism for horizontally moving the substrate in a direction perpendicular to the direction of the laser beam;
A semiconductor characterized by comprising a reaction gas supply nozzle and a discharge nozzle, which are provided opposite to each other so as to sandwich the laser beam projected onto the substrate, and for flowing the reaction gas in a direction perpendicular to the laser beam. Manufacturing equipment.