JPS6070758A - Semiconductor memory and manufacture thereof - Google Patents

Semiconductor memory and manufacture thereof

Info

Publication number
JPS6070758A
JPS6070758A JP17795283A JP17795283A JPS6070758A JP S6070758 A JPS6070758 A JP S6070758A JP 17795283 A JP17795283 A JP 17795283A JP 17795283 A JP17795283 A JP 17795283A JP S6070758 A JPS6070758 A JP S6070758A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
capacitor
section
electrode
si
projecting section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17795283A
Other versions
JPH07105474B2 (en )
Inventor
Mitsunori Ketsusako
Shinichiro Kimura
Tokuo Kure
Kikuo Kusukawa
Masanobu Miyao
Osamu Okura
Masahiro Shigeniwa
Hideo Sunami
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • H01L27/10805Dynamic random access memory structures with one-transistor one-capacitor memory cells
    • H01L27/10838Dynamic random access memory structures with one-transistor one-capacitor memory cells the capacitor and the transistor being in one trench
    • H01L27/10841Dynamic random access memory structures with one-transistor one-capacitor memory cells the capacitor and the transistor being in one trench the transistor being vertical

Abstract

PURPOSE:To increase the area of an electrode without augmenting the area of a plane, and to obtain desired capacitor capacitance by using the side wall section ot a groove dug to an Si substrate as the main section of an electrode surface in a capacitor. CONSTITUTION:A plate 8 is buried in a groove 17 dug to an Si substrate 10 through a capacitor SiO2 film 18 and a capacitor Si3N4 film 19. One part of the plate is removed, and a capacitor electrode 25 of an N<+> layer - an Si projecting section 21 are formed from the hole. A word line 4 as a gate is formed to the projecting section 21 through a gate oxide film 12. A bit line 3 is connected electrically to an N<+> diffusion layer 15 through a contact hole 9. Consequently, a switching transistor can utilize the side wall of the Si projecting section 21 as a switching transistor channel section 28. Accoringly, a distance between a capacitor region 16 and the contact hole is unnecessitated, and the method is of extremely advantage to the increase of the density of a memory cell.
JP17795283A 1983-09-28 1983-09-28 Semiconductor memory Expired - Lifetime JPH07105474B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17795283A JPH07105474B2 (en) 1983-09-28 1983-09-28 Semiconductor memory

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP17795283A JPH07105474B2 (en) 1983-09-28 1983-09-28 Semiconductor memory
KR840005915A KR920010461B1 (en) 1983-09-28 1984-09-26 Semiconductor memory
DE19843483709 DE3483709D1 (en) 1983-09-28 1984-09-28 Semiconductor memory and process for its production.
EP19840111667 EP0135942B1 (en) 1983-09-28 1984-09-28 Semiconductor memory and method of producing the same
US07081142 US4937641A (en) 1983-09-28 1987-08-03 Semiconductor memory and method of producing the same
US07194980 US4984038A (en) 1983-09-28 1988-05-17 Semiconductor memory and method of producing the same
US08093033 US5357131A (en) 1982-03-10 1993-07-19 Semiconductor memory with trench capacitor

Publications (2)

Publication Number Publication Date
JPS6070758A true true JPS6070758A (en) 1985-04-22
JPH07105474B2 JPH07105474B2 (en) 1995-11-13

Family

ID=16039948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17795283A Expired - Lifetime JPH07105474B2 (en) 1983-09-28 1983-09-28 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPH07105474B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280654A (en) * 1985-03-21 1986-12-11 Texas Instruments Inc Vertical dram cell and making thereof
JPS61294854A (en) * 1985-06-22 1986-12-25 Toshiba Corp Semiconductor device
JPS62169475A (en) * 1986-01-22 1987-07-25 Nec Corp Semiconductor memory device
JPS62194666A (en) * 1985-11-22 1987-08-27 Texas Instruments Inc Integrated circuit
JPS62271462A (en) * 1986-02-26 1987-11-25 Texas Instruments Inc Vertical integrated circuit device and manufacture of the same
JPS63240061A (en) * 1987-03-27 1988-10-05 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JP2007535132A (en) * 2003-12-19 2007-11-29 マイクロン テクノロジー, インク. Integrated circuit memory cell and its manufacturing method
US7572632B2 (en) 1997-02-14 2009-08-11 Life Technologies Corporation Dry powder cells and cell culture reagents and methods of production thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643171U (en) * 1979-09-10 1981-04-20
JPS5779661A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643171U (en) * 1979-09-10 1981-04-20
JPS5779661A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280654A (en) * 1985-03-21 1986-12-11 Texas Instruments Inc Vertical dram cell and making thereof
JPS61294854A (en) * 1985-06-22 1986-12-25 Toshiba Corp Semiconductor device
JPS62194666A (en) * 1985-11-22 1987-08-27 Texas Instruments Inc Integrated circuit
JPS62169475A (en) * 1986-01-22 1987-07-25 Nec Corp Semiconductor memory device
JPS62271462A (en) * 1986-02-26 1987-11-25 Texas Instruments Inc Vertical integrated circuit device and manufacture of the same
JPS63240061A (en) * 1987-03-27 1988-10-05 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
US7572632B2 (en) 1997-02-14 2009-08-11 Life Technologies Corporation Dry powder cells and cell culture reagents and methods of production thereof
JP2007535132A (en) * 2003-12-19 2007-11-29 マイクロン テクノロジー, インク. Integrated circuit memory cell and its manufacturing method

Also Published As

Publication number Publication date Type
JPH07105474B2 (en) 1995-11-13 grant

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