JPS6068655A - Manufacture of mos transistor - Google Patents
Manufacture of mos transistorInfo
- Publication number
- JPS6068655A JPS6068655A JP17624083A JP17624083A JPS6068655A JP S6068655 A JPS6068655 A JP S6068655A JP 17624083 A JP17624083 A JP 17624083A JP 17624083 A JP17624083 A JP 17624083A JP S6068655 A JPS6068655 A JP S6068655A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate electrode
- oxide film
- silicon oxide
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000001590 oxidative Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To enable to reduce the thickness as compared with a silicon oxide film by anisotropic etching and to selectively form only on the side of a gate electrode by employing a thermally nitrided film on the side of the gate electrode as a mask of silicide of the gate electrode, source and drain regions. CONSTITUTION:A silicon oxide film 35 is formed on the active region 34 of a silicon substrate 31 formed with a field oxide film 32 as a gate film, and a polycrystalline silicon film 36 is grown thereon. A silicon oxide film 37 is formed by dry oxidizing on the film 36. Then, the films 36, 37 are simultaneously allowed to remain at the portions to become gate electrodes, and to remove the other. Then, a thermally nitrided film 38 is formed at the side of the gate electrode with the thin silicon oxide film 37' on the film 36 as a mask. Then, As ions are implanted by ion implanting, and metal 39 is accumulated. Thereafter, a heat treatment is performed, a silicide 310 is formed on the gate electrode, source and drain regions, As is simultaneously diffused to form source and drain diffused layers 311.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17624083A JPS6068655A (en) | 1983-09-26 | 1983-09-26 | Manufacture of mos transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17624083A JPS6068655A (en) | 1983-09-26 | 1983-09-26 | Manufacture of mos transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6068655A true JPS6068655A (en) | 1985-04-19 |
Family
ID=16010085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17624083A Pending JPS6068655A (en) | 1983-09-26 | 1983-09-26 | Manufacture of mos transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6068655A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109762A (en) * | 1991-05-16 | 1993-04-30 | Internatl Business Mach Corp <Ibm> | Semiconductor device and manufacture thereof |
| US6759315B1 (en) * | 1999-01-04 | 2004-07-06 | International Business Machines Corporation | Method for selective trimming of gate structures and apparatus formed thereby |
| CN102752991A (en) * | 2011-04-18 | 2012-10-24 | 索尼计算机娱乐公司 | Heat sink and electronic apparatus including heat sink |
| US9756761B2 (en) | 2011-04-18 | 2017-09-05 | Sony Corporation | Electronic apparatus |
-
1983
- 1983-09-26 JP JP17624083A patent/JPS6068655A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109762A (en) * | 1991-05-16 | 1993-04-30 | Internatl Business Mach Corp <Ibm> | Semiconductor device and manufacture thereof |
| US6759315B1 (en) * | 1999-01-04 | 2004-07-06 | International Business Machines Corporation | Method for selective trimming of gate structures and apparatus formed thereby |
| CN102752991A (en) * | 2011-04-18 | 2012-10-24 | 索尼计算机娱乐公司 | Heat sink and electronic apparatus including heat sink |
| US9756761B2 (en) | 2011-04-18 | 2017-09-05 | Sony Corporation | Electronic apparatus |
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