JPS6062137A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS6062137A
JPS6062137A JP16937883A JP16937883A JPS6062137A JP S6062137 A JPS6062137 A JP S6062137A JP 16937883 A JP16937883 A JP 16937883A JP 16937883 A JP16937883 A JP 16937883A JP S6062137 A JPS6062137 A JP S6062137A
Authority
JP
Japan
Prior art keywords
laser
laser trimming
film
fuse
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16937883A
Other languages
Japanese (ja)
Inventor
Tetsusuke Toyooka
豊岡 哲介
Yoshiki Nagatomo
良樹 長友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP16937883A priority Critical patent/JPS6062137A/en
Publication of JPS6062137A publication Critical patent/JPS6062137A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To shrink a laser trimming fuse section, and to prevent the lowering of the reliability of a semiconductor device by coating the surface with a film, which has a window in size surrounding the fuse and the quality of material having the melting point higher than a metal or the fuse. CONSTITUTION:A film 6 having the quality of material with the melting point higher than that of a metal or a laser trimming fuse is formed on an insulating film 3, and the film 6 is bored 5 on the fuses 2. The film 6 is used for protecting an MOS element, a poly Si wiring, etc. on a substrate 1 from laser beams, and Al is suitable for a protection from laser beams because its melting point is lower than poly Si but its reflectivity of beams is higher. Even when defective accuracy on the positioning of a laser trimming device or a focal displacement is generated, laser beams are reflected and absorbed by sections except the fuses 2 by the film 6, the amount of light of a laser directly projected to the substrate 1 is reduced, the damage of the substrate 1 is minimized remarkably, and reliability is improved. According to the constitution, the holes 5 can be shrunk up to 6mum, and areas required for the fuses 2 can be reduced up to three quarters or two thirds that of conventional devices.

Description

【発明の詳細な説明】 (技術分野) この発明は、高密度半導体素子のレーザトリミングにお
いて、レーザトリミングヒユーズ部分を縮/Jル、かつ
信頼性を向上させる半導体素子に関する。
Detailed Description of the Invention (Technical Field) The present invention relates to a semiconductor device that reduces the size of a laser trimming fuse portion and improves reliability in laser trimming of a high-density semiconductor device.

(従来技術) 従来のレーザトリミングヒユーズは第1図のように構成
されておシ、第1図(a)は平向図、第1図(b)は第
1図(a)のA−に線の断面図である。
(Prior Art) A conventional laser trimming fuse is constructed as shown in Fig. 1. FIG.

ここで云うレーザトリミングヒユーズとは、数timd
sのレーザスポット光を切断したい半導体上の数μmの
ポリシリコンなどの配線に当て、その配線を切断し、そ
の切断される数μmのポリシリコンなどの配線を云う。
The laser trimming fuse mentioned here is several timd
A laser spot beam of s is applied to a polysilicon wiring of several micrometers on a semiconductor to be cut, and the wiring is cut.

さて、第1図(a)、第1図(b)において、1は基板
(半導体基板)、2はレーザトリミングヒユーズ、3は
絶縁膜、4はレーザトリミングヒユーズ上にあけた絶縁
膜の穴である。
Now, in Figures 1(a) and 1(b), 1 is a substrate (semiconductor substrate), 2 is a laser trimming fuse, 3 is an insulating film, and 4 is a hole in the insulating film made on the laser trimming fuse. be.

レーザトリミングヒユーズ上にあけた絶縁膜3の穴4よ
り、レーザトリミングヒユーズ2をレーザトリミング装
置を使用して切断する。したがって、レーザトリミング
装置の位置合わせ精度が悪いと、レーザトリミングヒユ
ーズ2の切断をするつもシのレーザ光がずれて、レーザ
トリミングヒユーズ2の間にある絶縁膜3にレーザトリ
ミング装置のレーザ光が自だシ、基板1に埋め込まれて
いるMOSFETなどの素子にダメージを与え1信頼性
が悪くなる。
The laser trimming fuse 2 is cut using a laser trimming device through the hole 4 of the insulating film 3 made on the laser trimming fuse. Therefore, if the positioning accuracy of the laser trimming device is poor, the laser beam of the laser trimming device will be misaligned when cutting the laser trimming fuse 2, and the laser beam of the laser trimming device will automatically strike the insulating film 3 between the laser trimming fuses 2. However, this may damage elements such as MOSFETs embedded in the substrate 1, resulting in poor reliability.

また、レーザトリミング装置の焦点がずれて、レーザト
リミングを行なうとレーザトリミングヒユーズ20間隔
が狭いときには、切断するつもシのレーザトリミングヒ
ユーズ2の隣のレーザトリミングヒユーズ2にダメージ
、(切断もしくは抵抗の変化)を与える。
In addition, if the focus of the laser trimming device shifts and the distance between the laser trimming fuses 20 is narrow when performing laser trimming, damage may occur to the laser trimming fuse 2 next to the laser trimming fuse 2 that was intended to be cut (cutting or resistance change). )give.

また、現状のレーザ装置では焦点がずれる場合があシ、
ビーム径が太くなるのでレーザトリミングヒユーズ2の
トリミングされる長さが長くなシ、レーザトリミングヒ
ユーズ2をあらかじめ長く設計しなければならない。
Also, with current laser equipment, the focus may shift,
Since the beam diameter becomes thick, the trimmed length of the laser trimming fuse 2 is long, and the laser trimming fuse 2 must be designed long in advance.

これらのことから、従来レーザトリミングヒユーズ2の
部分の設計には装置の位置合わせ精度、焦点合わせ精度
に十分な安全値を加えた設計基準を用いる必要がちシ、
レーザトリミングヒユーズ2の部分を縮小するのは難し
く、半導体素子が大きくなるというなどの欠点があった
For these reasons, conventionally, when designing the laser trimming fuse 2 part, it is necessary to use design standards that add a sufficient safety value to the positioning accuracy and focusing accuracy of the device.
It is difficult to reduce the size of the laser trimming fuse 2, and there are drawbacks such as an increase in the size of the semiconductor element.

(発明の目的) この発明は、上記従来の欠点を除去するためになされた
もので、レーザトリミングヒユーズ部分を縮小でき、レ
ーザトリミング装置の位置合せ精度、焦点がずれても信
頼性が低下しない半導体素子を提供することを目的とす
る。
(Object of the Invention) This invention was made to eliminate the above-mentioned conventional drawbacks, and it is possible to reduce the laser trimming fuse part, and the alignment accuracy of the laser trimming device and the reliability of the semiconductor device do not deteriorate even if the focus shifts. The purpose is to provide an element.

(発明の構成) この発明の半導体素子は、レーザトリミングヒユーズの
上部にこれを囲む大きさの穴をもつレーザ保護膜をかぶ
せたものである。
(Structure of the Invention) The semiconductor element of the present invention has a laser protective film having a hole large enough to surround the laser trimming fuse over the laser trimming fuse.

(実施例) 以下、この発明の半導体素子の実施例について図面に基
づき説明する。第2図(a)はその一実施例の平面図で
あシ、第2図(b)は第2図(a)のB −B’線の平
面図である。
(Example) Hereinafter, an example of the semiconductor device of the present invention will be described based on the drawings. FIG. 2(a) is a plan view of one embodiment, and FIG. 2(b) is a plan view taken along line BB' in FIG. 2(a).

この第2図(a)、第2図(b)の両図において、第1
図(a)、第1図(b)と同一部分には同一符号を付し
て述べる。この第2図(a)、第2図(b)の両図を第
1図(a)、第1図(b)と比較しても明らかなように
、この実施例では、基板1(半導体基板)、トリミング
ヒユーズ2、絶縁膜3の穴4の部分は第1図(a)、第
1図(b)と同様であるが、以下の点が従来とは異なり
、この発明の特徴をなす部分である。
In both FIG. 2(a) and FIG. 2(b), the first
The same parts as in FIG. 1(a) and FIG. 1(b) will be described with the same reference numerals. As is clear from comparing both FIGS. 2(a) and 2(b) with FIGS. 1(a) and 1(b), in this embodiment, the substrate 1 (semiconductor The trimming fuse 2 (substrate), the trimming fuse 2, and the hole 4 in the insulating film 3 are the same as those shown in FIGS. It is a part.

すなわち、絶縁膜3上に金属もしくはレーザトリミング
ヒユーズよシ融点の高い材質の膜6を形成し、この膜6
に穴5があけられている。この穴5はレーザトリミング
ヒユーズ2上に形成されている。
That is, a film 6 made of a material with a high melting point such as metal or a laser trimming fuse is formed on the insulating film 3, and this film 6 is
Hole 5 is drilled in. This hole 5 is formed on the laser trimming fuse 2.

上記膜6はレーザ保護膜となるものであシ、レーザ光に
対して基板1上のMOSFET、ポリシリコン配線など
を保護するものであり、アルミの融点はポリシリコンよ
り低いが光の反射率が高いため、レーザ光に対して好適
な保護となる。
The film 6 serves as a laser protection film and protects the MOSFETs, polysilicon wiring, etc. on the substrate 1 from the laser beam.Although the melting point of aluminum is lower than that of polysilicon, the light reflectance is low. Its high value provides good protection against laser light.

この膜6に形成した穴5と絶縁膜の穴4の上よシレーザ
トリミング装置を用いて、レーザトリミングヒユーズを
切断するようにしている。
A laser trimming device is used to cut the laser trimming fuse above the hole 5 formed in the film 6 and the hole 4 in the insulating film.

イマ、レーザトリミングヒユーズ2の切断に最適なエネ
ルギ設定がしであるレーザトリミング装置のレーザ光を
膜6にあけた穴5からレーザ) IJミングヒューズ2
に当て切断するとする。
Now, the laser beam of the laser trimming device, which has the optimum energy setting for cutting the laser trimming fuse 2, is transmitted through the hole 5 made in the film 6).
Suppose you want to cut it by hitting it against it.

このときレーザトリミング装置の位置合わせ精゛度が悪
いと、レーザトリミングヒユーズ2上よシレーザ光がず
れたシ、または焦点がずれてレーザ光が広がるが、表面
の金属もしくはレーザトリミングヒユーズ2より融点の
高い材質の膜6によって、レーザトリミングヒユーズ2
以外に当たるレーザ光は反射、吸収され、基板1に直接
当たるレーザ光の量が減少し、レーザ光による基板1の
ダメージは大幅に小さくなシ、信頼性が向上する。
At this time, if the positioning accuracy of the laser trimming device is poor, the laser beam may be shifted above the laser trimming fuse 2, or the focus may shift and the laser beam will spread. Laser trimming fuse 2 is made of high quality membrane 6.
Laser light that hits other areas is reflected and absorbed, reducing the amount of laser light that directly hits the substrate 1, significantly reducing damage to the substrate 1 caused by the laser light, and improving reliability.

また、レーザ光が基板1に当たる場所が正確に決まるの
で、レーザトリミングヒユーズ2の設計基準値を構成す
るレーザ光がずれた場合の安全値を短くすることができ
、レーザトリミングヒユーズ2の部分の縮小化ができ、
レーザトリミングヒユーズ2が多数配列されている場合
は、半導体素子をこの実施例を使用することによシ縮小
することができる。
In addition, since the location where the laser beam hits the substrate 1 is accurately determined, the safety value in case the laser beam shifts, which constitutes the design standard value of the laser trimming fuse 2, can be shortened, and the portion of the laser trimming fuse 2 can be reduced. can be converted into
When a large number of laser trimming fuses 2 are arranged, the size of the semiconductor device can be reduced by using this embodiment.

たとえば、従来は穴を8μ程度のものを使用するが、こ
の発明の実施例では、他の設計基準を変更することなく
、穴を6μ程度に縮小することが可能であシ、レーザト
リミングヒユーズ2の部分のチップ上の所要面積はほぼ
3/4〜2/3程度にすることができる。
For example, conventionally, a hole of about 8μ is used, but in the embodiment of the present invention, it is possible to reduce the hole to about 6μ without changing other design criteria. The area required for the portion on the chip can be reduced to about 3/4 to 2/3.

(発明の効果) 以上のように、この発明の半導体素子によれば、レーザ
トリミングヒユーズを囲む大きさの穴をもつ金属もしく
はレーザトリミングヒユーズより融点の高い材質の膜を
かぶせるようにしたので、レーザトリミングヒユーズ部
分を縮小できるとともに、レーザトリミング装置の位置
合わせ精度、焦点がずれても信頼性は悪くならないとい
う利点がある。
(Effects of the Invention) As described above, according to the semiconductor device of the present invention, the laser trimming fuse is covered with a metal having a hole large enough to surround it or a film made of a material having a higher melting point than the laser trimming fuse. This has the advantage that the trimming fuse portion can be reduced, and the alignment accuracy and reliability of the laser trimming device do not deteriorate even if the focus shifts.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は従来のレーザトリミングヒユーズの平面
図、第1図(b)は第1図(a)のh−X線の断面図、
第2図(a)はこの発明の半導体素子の一実施例の平面
図、第2図(b)は第2図(a)のB−B’線の断面図
である@パ 1・・・基板、2・・・レーザトリミングヒユーズ、3
・・・絶縁膜、4,5・・・穴、6・・・金属もしくは
レーザトリミングヒユーズより融点の高い材質の膜。 第1図
FIG. 1(a) is a plan view of a conventional laser trimming fuse, FIG. 1(b) is a cross-sectional view taken along the h-X line in FIG. 1(a),
FIG. 2(a) is a plan view of an embodiment of the semiconductor device of the present invention, and FIG. 2(b) is a cross-sectional view taken along line BB' in FIG. 2(a). Substrate, 2...Laser trimming fuse, 3
...Insulating film, 4, 5... Hole, 6... Metal or film made of material with a higher melting point than the laser trimming fuse. Figure 1

Claims (1)

【特許請求の範囲】[Claims] 半導体基板上のレーザトリミングヒユーズの上部にレー
ザトリミングヒユーズを囲む大きさの穴をもつレーザ保
護用の膜をかぶせたことを特徴とする半導体素子。
A semiconductor device characterized in that a laser protection film having a hole large enough to surround the laser trimming fuse is placed over the laser trimming fuse on the semiconductor substrate.
JP16937883A 1983-09-16 1983-09-16 Semiconductor element Pending JPS6062137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16937883A JPS6062137A (en) 1983-09-16 1983-09-16 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16937883A JPS6062137A (en) 1983-09-16 1983-09-16 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS6062137A true JPS6062137A (en) 1985-04-10

Family

ID=15885480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16937883A Pending JPS6062137A (en) 1983-09-16 1983-09-16 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS6062137A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63212177A (en) * 1987-02-26 1988-09-05 Ntn Toyo Bearing Co Ltd Electric motor type power steering device
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826785A (en) * 1987-01-27 1989-05-02 Inmos Corporation Metallic fuse with optically absorptive layer
JPS63212177A (en) * 1987-02-26 1988-09-05 Ntn Toyo Bearing Co Ltd Electric motor type power steering device

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