JPS6054503A - Even-order high frequency multiplying circuit - Google Patents
Even-order high frequency multiplying circuitInfo
- Publication number
- JPS6054503A JPS6054503A JP58163745A JP16374583A JPS6054503A JP S6054503 A JPS6054503 A JP S6054503A JP 58163745 A JP58163745 A JP 58163745A JP 16374583 A JP16374583 A JP 16374583A JP S6054503 A JPS6054503 A JP S6054503A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- high frequency
- transistors
- trs
- frequency multiplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0062—Bias and operating point
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0092—Measures to linearise or reduce distortion of oscillator characteristics
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高周波回路における偶数次逓倍回路に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an even-order multiplier circuit in a high frequency circuit.
従来例の構成とその問題点
近年、音響機器用受信機分野においては高性能、高忠実
度再生、高品位受信の要望が高く、従来通信機分野に属
していた回路技術、方法が数多く採用され、導入される
ようになってきた。しかし、通信機分野の技術を採用す
る場合、従来技術そのままの転用のみでは音響機器用受
信機に適さない面があった。Conventional configurations and their problems In recent years, there has been a high demand for high performance, high-fidelity reproduction, and high-quality reception in the field of receivers for audio equipment, and many circuit technologies and methods that previously belonged to the field of communication equipment have been adopted. , has been introduced. However, when adopting technology from the field of communication devices, there are aspects that are not suitable for receivers for audio equipment if the conventional technology is simply used as is.
以下に従来の偶数次逓倍回路について説明する。第7図
は従来の偶数次逓倍回路である。入力信号がトランジス
タl、2のベースに入カスると、各々のコレクタ側は第
8図に示す高次の高調波信号を発生し、共通に接続され
たコレクタ負荷8に伝送される。前記高調波信号は、負
荷8の周波数対振幅特性により、希望の高調波以外の成
分は減衰されてしまい、第9図に示す高調波を含有した
逓倍信号を出力する。A conventional even-order multiplier circuit will be explained below. FIG. 7 shows a conventional even-order multiplier circuit. When an input signal enters the bases of transistors 1 and 2, the collector side of each generates a high-order harmonic signal shown in FIG. 8, which is transmitted to a commonly connected collector load 8. In the harmonic signal, components other than the desired harmonic are attenuated due to the frequency versus amplitude characteristics of the load 8, and a multiplied signal containing the harmonic shown in FIG. 9 is output.
しかし、上記のように高調波含有率を改善する目的で負
荷8と9の結合係数を変化させ、高選択度特性を負荷と
して採用すると、高調波含有率は改善するが、第6図に
示すように信号伝達の2つの要素である高帯域特性のレ
ベルCと群遅延時間特性dは劣化する。However, if the coupling coefficients of loads 8 and 9 are changed to improve the harmonic content as described above and a high selectivity characteristic is adopted as the load, the harmonic content is improved, but as shown in Fig. 6. As such, two elements of signal transmission, the level C of the high band characteristic and the group delay time characteristic d, deteriorate.
このように、従来の方式では、帯域の広い信号逓倍とし
ては適切でないということを示し、問題点を有している
。As described above, the conventional method has problems as it is not suitable for multiplication of signals over a wide band.
発明の目的
本発明は、偶数次の高周波を逓倍する場合、伝送信号の
群遅延時間特性を遊着することによって高帯域の伝送特
性を実現できる安価な偶数次高周波逓倍回路を提供する
ことを目的とする。Purpose of the Invention The object of the present invention is to provide an inexpensive even-order high-frequency multiplier circuit that can realize high-band transmission characteristics by modifying the group delay time characteristics of a transmission signal when multiplying even-order high frequencies. shall be.
発明の構成
コレクタを共通接続し、差動入力によって駆動する2つ
のトランジスタと一1前記2つのトランジスタのコレク
タに接続した同調回路と、前記2つの」ランジスタとエ
ミッタを共通接続して電流スイッチを行なう他のトラン
ジスタと、前記各トランジスタにそれぞれバイアス電位
を供するバイアス回路とから成る構成を採っている。Configuration of the Invention Two transistors whose collectors are connected in common and driven by differential inputs, a tuning circuit connected to the collectors of the two transistors, and the two transistors and emitters are commonly connected to perform a current switch. The structure includes other transistors and a bias circuit that supplies a bias potential to each of the transistors.
この構成によって、負荷は2つのトランジスタと他のト
ランジスタとの間にスイッチされ、負荷が他のトランジ
スタにかかつている時には出力信号は発生せず、また、
2つのトランジスタへの差動入力によ、って奇数次の高
調波成分はキャンセルされることになる。With this configuration, the load is switched between the two transistors and the other transistor, and no output signal is generated when the load is on the other transistor, and
Due to the differential input to the two transistors, odd-order harmonic components are canceled.
実施例の説明
、第1図は本発明の一実施例における偶数次高周波逓倍
回路を示す。1.2.3はそれぞれトランジスタである
。トランジスタ1及び2はコレクタを共通接続され、差
動入力により駆動されている。トランジスタ3のエミッ
タは、トランジスタ1.2のエミッタに共通に接続され
ている。4〜7は抵抗で、バイアス回路を構成している
。トランジスタ3のベースは、抵抗4.5に接続してい
る。DESCRIPTION OF THE EMBODIMENTS FIG. 1 shows an even-order high frequency multiplier circuit in an embodiment of the present invention. 1, 2, and 3 are transistors, respectively. Transistors 1 and 2 have their collectors connected in common and are driven by differential inputs. The emitters of transistors 3 are commonly connected to the emitters of transistors 1.2. 4 to 7 are resistors forming a bias circuit. The base of transistor 3 is connected to resistor 4.5.
抵抗4.5によって発生するバイアス電位は、抵抗6.
7によって発生するバイアス電位より偶数逓倍数に応じ
た電位分だけ高く設定する。このことにより、I・ラン
ジスタl、2のコレクタ′屯流は、第4図に示すように
、入力信号の一定期間のみ流れ、他の時間はトランジス
タ3にスイッチされてしまう。第2図は、トランジスタ
l、2の共通に接続されたコレクタ電流により発生する
高調波成分のレベル状態を示したものである。The bias potential generated by resistor 4.5 is applied to resistor 6.5.
7 is set higher than the bias potential generated by 7 by an amount corresponding to the even multiplier. As a result, the collector currents of the I transistors 1 and 2 flow only during a certain period of the input signal, and are switched to the transistor 3 at other times, as shown in FIG. FIG. 2 shows the level state of harmonic components generated by the commonly connected collector currents of transistors 1 and 2.
第3図は、第1図に示すコレクタの負荷8の周波数対振
幅特性により、他の成分が減衰された状態の…カレベル
を示したものである。尚、負荷8及び負荷9は、同調回
路を構成している。本実施例では第2次の偶数逓倍な示
しているが、第2図に示すように近傍の奇数逓倍レベル
は、従来のものに比べ少なくなっているため、負荷同調
回路の選択度特性を従来の回路に比べ、急峻にする必要
がなく第6図に示すように、周波数対振幅特性aを広帯
域にすることができた。また、そのために群遅延時間特
性すは広くなり、結果的に広い伝送特性を実現すること
ができた。FIG. 3 shows the power level with other components attenuated by the frequency versus amplitude characteristics of the collector load 8 shown in FIG. Note that the load 8 and the load 9 constitute a tuned circuit. In this example, second-order even multiplication is shown, but as shown in Figure 2, the neighboring odd multiplication levels are smaller than in the conventional one, so the selectivity characteristics of the load tuning circuit are different from those in the conventional one. Compared to the circuit shown in FIG. 6, there is no need to make the frequency-to-amplitude characteristic a wide-band, as shown in FIG. 6. Additionally, the group delay time characteristics became wider, and as a result, wider transmission characteristics could be realized.
発明の効果
本発明によれば、負荷同調回路の選択度特性を広くする
ことを可能にし、群遅延時間特性を改善したことにより
、帯域の広い信号逓倍をすることができる。また本発明
では特に高価なバンドパスフィルターなど不要で、従来
通りの回路部品をそのまま使用できるため、コスト上昇
を最少にとどめることができる。Effects of the Invention According to the present invention, it is possible to widen the selectivity characteristics of the load tuning circuit and improve the group delay time characteristics, thereby making it possible to perform signal multiplication over a wide band. Furthermore, the present invention does not require particularly expensive bandpass filters, and conventional circuit components can be used as they are, so that cost increases can be kept to a minimum.
第1図は本発明の偶数次高周波逓倍回路の一実施例を示
す回路図、第2図はトランジスタl、2により発生する
高調波成分の発生レベルを示すグラフ、第3図は本発明
による高調波成分の発生レベルを示すグラフ、第4図は
トランジスタのスイッチング状態を示す波形図、第5図
は第4図のスイッチング時と対応して負荷に現れる出力
レベルを示す波形図、第6図は本発明および従来例の周
波数対振幅特性および周波数対遅延特性を示す波形図、
第7図〜第9図は従来例の回路およびその特性を示すグ
ラフである。
1〜3・・・トランジスタ、4〜7・・・抵抗8.9・
・・負荷
代理人 弁理士 大 島 −公
第3図
第4図
第5図
第6図
第7図
第8図
5扉諌
第9図
扛(Hz)FIG. 1 is a circuit diagram showing an embodiment of the even-order high frequency multiplier circuit of the present invention, FIG. 2 is a graph showing the generation level of harmonic components generated by transistors l and 2, and FIG. Graph showing the generation level of wave components, Figure 4 is a waveform diagram showing the switching state of the transistor, Figure 5 is a waveform diagram showing the output level appearing on the load corresponding to the switching state of Figure 4, and Figure 6 is Waveform diagrams showing frequency vs. amplitude characteristics and frequency vs. delay characteristics of the present invention and conventional examples,
7 to 9 are graphs showing conventional circuits and their characteristics. 1 to 3...transistor, 4 to 7...resistance 8.9.
...Load agent Patent attorney Oshima -Ko Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8
Claims (1)
のトランジスタと、前記2つのトランジスタのコレクタ
に接続した同調回路と、前記2つのトランジスタとエミ
ッタを共通接続して電流スイッチを行なう他のトランジ
スタと、前記各トランジスタにそれぞれバイアス電位を
供するバイアス回路とから成る偶数次高周波逓倍回路。two transistors whose collectors are commonly connected and driven by a differential input, a tuning circuit connected to the collectors of the two transistors, and another transistor whose emitters are commonly connected to the two transistors to perform current switching; an even-order high frequency multiplier circuit comprising a bias circuit that supplies a bias potential to each of the transistors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58163745A JPS6054503A (en) | 1983-09-05 | 1983-09-05 | Even-order high frequency multiplying circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58163745A JPS6054503A (en) | 1983-09-05 | 1983-09-05 | Even-order high frequency multiplying circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6054503A true JPS6054503A (en) | 1985-03-29 |
Family
ID=15779873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58163745A Pending JPS6054503A (en) | 1983-09-05 | 1983-09-05 | Even-order high frequency multiplying circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6054503A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998000905A1 (en) * | 1996-06-28 | 1998-01-08 | The Whitaker Corporation | A transistor based frequency multiplier |
FR2828350A1 (en) * | 2001-08-03 | 2003-02-07 | Zarlink Semiconductor Ltd | FREQUENCY DOUBLE CIRCUIT DEVICE |
EP1698046B1 (en) * | 2003-12-19 | 2014-03-19 | TELEFONAKTIEBOLAGET LM ERICSSON (publ) | Frequency multiplying arrangements and a method for frequency multiplication |
-
1983
- 1983-09-05 JP JP58163745A patent/JPS6054503A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998000905A1 (en) * | 1996-06-28 | 1998-01-08 | The Whitaker Corporation | A transistor based frequency multiplier |
US5815014A (en) * | 1996-06-28 | 1998-09-29 | The Whitaker Corporation | Transistor based frequency multiplier |
FR2828350A1 (en) * | 2001-08-03 | 2003-02-07 | Zarlink Semiconductor Ltd | FREQUENCY DOUBLE CIRCUIT DEVICE |
EP1698046B1 (en) * | 2003-12-19 | 2014-03-19 | TELEFONAKTIEBOLAGET LM ERICSSON (publ) | Frequency multiplying arrangements and a method for frequency multiplication |
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