JPS6054465A - 三次元集積回路装置 - Google Patents

三次元集積回路装置

Info

Publication number
JPS6054465A
JPS6054465A JP58163920A JP16392083A JPS6054465A JP S6054465 A JPS6054465 A JP S6054465A JP 58163920 A JP58163920 A JP 58163920A JP 16392083 A JP16392083 A JP 16392083A JP S6054465 A JPS6054465 A JP S6054465A
Authority
JP
Japan
Prior art keywords
layers
dimensional
equation
yield
lsi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58163920A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518258B2 (https=
Inventor
Junji Sakurai
桜井 潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58163920A priority Critical patent/JPS6054465A/ja
Publication of JPS6054465A publication Critical patent/JPS6054465A/ja
Publication of JPH0518258B2 publication Critical patent/JPH0518258B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP58163920A 1983-09-05 1983-09-05 三次元集積回路装置 Granted JPS6054465A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58163920A JPS6054465A (ja) 1983-09-05 1983-09-05 三次元集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163920A JPS6054465A (ja) 1983-09-05 1983-09-05 三次元集積回路装置

Publications (2)

Publication Number Publication Date
JPS6054465A true JPS6054465A (ja) 1985-03-28
JPH0518258B2 JPH0518258B2 (https=) 1993-03-11

Family

ID=15783332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163920A Granted JPS6054465A (ja) 1983-09-05 1983-09-05 三次元集積回路装置

Country Status (1)

Country Link
JP (1) JPS6054465A (https=)

Also Published As

Publication number Publication date
JPH0518258B2 (https=) 1993-03-11

Similar Documents

Publication Publication Date Title
CN103038877A (zh) 用于控制半导体裸片翘曲的设备和方法
CN106407496A (zh) 设计半导体装置的布图的方法和制造半导体装置的方法
JP2008535239A5 (https=)
CN102543853B (zh) 冗余金属填充方法和集成电路版图结构
US6305004B1 (en) Method for improving wiring related yield and capacitance properties of integrated circuits by maze-routing
US6205570B1 (en) Method for designing LSI circuit pattern
CN102024083B (zh) 一种提取含有冗余金属的互连结构的电容的方法
CN105843976A (zh) 用于修改后的芯片设计的冗余填充方法
JP3917683B2 (ja) 半導体集積回路装置
CN103886148B (zh) 一种3d集成电路中热通孔位置自动布局方法和系统
CN107195561B (zh) 一种化学机械研磨缺陷检测方法
JP2002110801A (ja) 配線抵抗補正方法
CN102682163A (zh) 3d集成电路自动布局中tsv位置的网格优化方法
JPS6054465A (ja) 三次元集積回路装置
JP3247600B2 (ja) パターン発生方法
US20140264741A1 (en) Capacitor using barrier layer metallurgy
CN103116663B (zh) 填充冗余金属的方法及冗余金属填充模式查找表建立方法
CN112349679B (zh) 集成电路的连线网络、集成电路、芯片及电子设备
JP3117686B2 (ja) Lsi回路パターンの設計方法
CN104716140B (zh) 在存储器mux1布局中具有多层引脚的器件
US8492267B1 (en) Pillar interconnect chip to package and global wiring structure
KR100676606B1 (ko) Cmp 공정을 위한 더미 패턴을 형성하는 방법
JP2991692B2 (ja) Lsi回路パターンの設計方法
US7763968B2 (en) Semiconductor device featuring large reinforcing elements in pad area
Raman et al. Utilizing Thermo-Mechanical CPI Simulation to Define a 7nm Package Envelope