JPS604378A - Image pickup device - Google Patents

Image pickup device

Info

Publication number
JPS604378A
JPS604378A JP58112406A JP11240683A JPS604378A JP S604378 A JPS604378 A JP S604378A JP 58112406 A JP58112406 A JP 58112406A JP 11240683 A JP11240683 A JP 11240683A JP S604378 A JPS604378 A JP S604378A
Authority
JP
Japan
Prior art keywords
smear
period
read out
section
line information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58112406A
Other languages
Japanese (ja)
Inventor
Akira Suga
章 菅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP58112406A priority Critical patent/JPS604378A/en
Publication of JPS604378A publication Critical patent/JPS604378A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/625Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To effectively remove a smear phenomenon, by reading out line information in the vicinity of the boundary between a photoelectrically converting section and an accumulating section and calculating the line information and another line information read out from the accumulating section. CONSTITUTION:Electric charge accumulated in a photoelectrically converting section are shifted to an electric charge accumulating section in a vertical blanking period. All image information in the charge accumulating section is successively read out by a horizontal register and smear components are read out in 1-H period just before the next vertical blanking period. Only the smear components read out in the 1-H period are AD-converted and stored in a line memory 24 for a period of 1-V period. The smear components are attenuated by an attenuator 26 after they are again DA-converted and become smear correcting signals 29. When the smear correcting signals 29 and picture signals are supplied to a subtracting circuit and their difference is obtained, a picture signal 28 in which smear components are removed, are obtained.

Description

【発明の詳細な説明】 (技術分野) 本発明はフレーム転送型CODを用いた撮像装置、特に
スミア現象を除去せしめた撮像装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to an imaging device using a frame transfer type COD, and particularly to an imaging device that eliminates a smear phenomenon.

(従来技術) 従来フレーム転送型CCDの場合、第1図に示したごど
く、光電変換部1内の電荷を垂直ブランキング期間内蓄
積部2に図中矢印3,4の如く転送するとき光電変換部
1の一部に強い光が照射されていると、この光のレベル
に比例した電荷が発生し蓄積部2内の電荷を水平レジス
タ6、アンプ7を介して読み出すと、その部分が画面の
上から下まで他の部分より若干もちあがったような現象
が生じ、画面の質を非常に悪化させる。
(Prior art) In the case of a conventional frame transfer type CCD, as shown in FIG. When a part of the conversion unit 1 is irradiated with strong light, a charge proportional to the level of this light is generated, and when the charge in the storage unit 2 is read out via the horizontal register 6 and amplifier 7, that part is displayed on the screen. A phenomenon occurs in which the screen appears to be slightly raised from the top to the bottom compared to other parts, which greatly deteriorates the quality of the screen.

このような所謂スミア現象を有効に排除する方法・装置
は従来考え出されていなかった。
Conventionally, no method or device has been devised to effectively eliminate such a so-called smear phenomenon.

(目的) 本発明は、上述従来例の欠点を除失し、スミアのない画
俄を得ることが可能な撮像装置を提供する事を目的とし
ている。
(Objective) It is an object of the present invention to provide an imaging device that eliminates the drawbacks of the above-mentioned conventional example and is capable of obtaining smear-free image gaps.

(実施例) 以下実施例に基づき本発明を説明する。(Example) The present invention will be explained below based on Examples.

第2図〜第5図は本発明の第1実施例をi(2明する図
である。第2図において、第1図と同じ番号のものは同
じ要素を示す。a〜Cは光電変換部、d −gは蓄積部
の画素であり、蓄積部2は光電変換部1よりも1水平ラ
イン多く有しており、またアンチブルーミングドレイン
9は蓄積部2において、光電変換部との境界近傍の最初
の水平ラインであるdの部分までのびている。103は
遮光膜である。
2 to 5 are diagrams illustrating the first embodiment of the present invention. In FIG. 2, the same numbers as in FIG. 1 indicate the same elements. a to C are photoelectric conversion , d - g are pixels of the storage section, and the storage section 2 has one horizontal line more than the photoelectric conversion section 1, and the anti-blooming drain 9 is located near the boundary with the photoelectric conversion section in the storage section 2. 103 is a light shielding film.

第5図は本発明の撮像装置の構成の一例を示す図であり
、20は第2図示のようなCCD、21はCCD駆動回
路、22は制御クロック発生回路、26は〜の変換器、
24は記憶手段としてのラインメモリ、25はV人変換
器、26はアツテイネータ、27は演算手段としての減
算回路である。
FIG. 5 is a diagram showing an example of the configuration of an imaging apparatus according to the present invention, in which 20 is a CCD as shown in the second diagram, 21 is a CCD drive circuit, 22 is a control clock generation circuit, 26 is a converter,
24 is a line memory as a storage means, 25 is a V person converter, 26 is an attenuator, and 27 is a subtraction circuit as arithmetic means.

第4図は第3図中の駆動回路21により駆動されるCC
Dの内部ボテンシアル状態の一例を示す図であり、第5
図は駆動回路21による駆動タイミングを示す図である
FIG. 4 shows a CC driven by the drive circuit 21 in FIG.
It is a diagram showing an example of the internal potential state of D.
The figure is a diagram showing drive timing by the drive circuit 21.

以下第2図〜第5図を用いて本実施例の動作を説明する
The operation of this embodiment will be explained below using FIGS. 2 to 5.

説明を簡単にするため、第3図のボテンシアル模式図で
説明されるrうな単相駆動のフレーム転送型CCDを用
−いて本発明の詳細な説明することにする。尚、第3゛
図は光電変換部と蓄積部の境界近傍の画素C〜fについ
て示している。単相駆動のCCUにおいては、第6図に
示したごとく、光電変換部の転送電極101、蓄積部の
転送電極102に覆われていない部分ではボテンシアル
が固定ボテンシアル16のごとく固定されており、電極
101 、102 下の部分では、クロック電圧がハイ
レベルのときは電極101 、102下のボテンシアル
はボテンシアルレベル12に、り四ツク電圧がローレベ
ルのときは、ボテンシアルレベルは11のごとくなる。
In order to simplify the explanation, the present invention will be explained in detail using a single-phase driven frame transfer type CCD as illustrated in the schematic potential diagram of FIG. Note that FIG. 3 shows pixels C to f near the boundary between the photoelectric conversion section and the storage section. In a single-phase drive CCU, as shown in FIG. 6, the poten- tial is fixed as a fixed poten- tial 16 in the portion not covered by the transfer electrode 101 of the photoelectric conversion section and the transfer electrode 102 of the storage section, and the electrode In the portions below electrodes 101 and 102, when the clock voltage is at a high level, the voltages below the electrodes 101 and 102 are at a voltage level of 12, and when the clock voltage is at a low level, the voltage level is at a voltage level of 11.

従って電極101 、102に同相で同じ振巾のパルス
ψPI、ψpsを供給すると、電荷は第2図中右方向に
順次転送される。
Therefore, when pulses ψPI and ψps of the same phase and amplitude are supplied to the electrodes 101 and 102, charges are sequentially transferred rightward in FIG.

さて第2図のCCDに対し第6図の駆動回路21からは
第4図の駆動パルス(a)を光電変換部1に、パルス(
b)を蓄積部2、パルス(c)を水平レジスタ6の各転
送電極に加える。これにより、光電変換部1に蓄えられ
た画像は垂直ブランキング期間T2に、電荷蓄積部2に
移される。更に期間T3に駆動パルス(b)をハイレベ
ルにしたまま、駆動パルス(、)によって光電変換部の
内容を数水平ライン分空転送することによって電荷蓄積
部2の最初のラインdに数水平ラインのスミア成分を加
算して蓄積する。
Now, for the CCD of FIG. 2, the drive circuit 21 of FIG. 6 sends the drive pulse (a) of FIG. 4 to the photoelectric conversion unit 1, and the pulse (
b) is applied to the storage section 2, and pulse (c) is applied to each transfer electrode of the horizontal register 6. Thereby, the image stored in the photoelectric conversion unit 1 is transferred to the charge storage unit 2 during the vertical blanking period T2. Furthermore, during period T3, while keeping the drive pulse (b) at a high level, the contents of the photoelectric conversion section are transferred several horizontal lines by the drive pulse (,), thereby transferring the contents of the photoelectric conversion section several horizontal lines to the first line d of the charge storage section 2. smear components are added and accumulated.

次に、期間T5中に電荷蓄積部2の全画像情報を水平レ
ジスタ6より順次読み出すと、次の垂直ブランキング期
間の直前の1H期間T6にスミア成分が水平シフトレジ
スタ6から読み出される。
Next, when all the image information in the charge storage section 2 is sequentially read out from the horizontal register 6 during the period T5, the smear component is read out from the horizontal shift register 6 during the 1H period T6 immediately before the next vertical blanking period.

この様に垂直ブランキング期間の直前の期間T6によみ
だされたスミア成分は、期間T6の間のみ〜Φ変換器2
5によってん巾変換されラインメモリ24に1Vの期間
記憶され再び坊4.変換器25によってD/A変換され
たのちアツテイネータ26によって減衰され、スミア補
正信号29となる。アツティネータ26による減衰率は
スミア成分を検出するための空睨み出し回数nに対し1
/nに設定されているのでスミア補正信号29と、画像
の1ラインに含まれるスミア成分とはほぼ同量になり、
減算回路27によってスミア補正信号29と画像信号の
差をとると、スミア成分は打ち消されてスミアのない画
像信号28を得ることができる。尚、ここでスミア補正
信号29はnラインのスミア成分の平均値となるためS
ハをF倍改善する事ができる。
In this way, the smear component generated in the period T6 immediately before the vertical blanking period is transmitted only during the period T6 to the Φ converter 2.
The width is converted by 4.5 and stored in the line memory 24 for a period of 1V. After being D/A converted by the converter 25, it is attenuated by the attenuator 26, and becomes the smear correction signal 29. The attenuation rate by the attenuator 26 is 1 for the number n of blank stares to detect the smear component.
/n, so the smear correction signal 29 and the smear component included in one line of the image are approximately the same amount,
When the subtraction circuit 27 takes the difference between the smear correction signal 29 and the image signal, the smear component is canceled out, and a smear-free image signal 28 can be obtained. Note that here, the smear correction signal 29 is the average value of the smear components of n lines, so S
It is possible to improve Ha by F times.

尚、期間T3等において、一部に非常に強い光があたり
、電荷蓄積部2に蓄積されたスミア成分が電荷蓄積部2
のセルの飽和容量をこえるようなことがあっても、余剰
電荷はアンチブルーミングドレーン9にすてられるので
ブルーミングをおこすことはない。
In addition, during the period T3 etc., a part is exposed to very strong light, and the smear component accumulated in the charge accumulation section 2 is removed from the charge accumulation section 2.
Even if the saturation capacity of the cell exceeds the saturation capacity of the cell, the excess charge is disposed of to the anti-blooming drain 9, so no blooming occurs.

又、本実施例では蓄積部2の水平ライン数を光電変換部
の水平ライン数より1ライン多く設けた場合につき説明
したが、これは同数であっても差し支えない。その場合
実際にモーター上に再生される水平ライン数をその公吏
なくすれば良い。
Further, in this embodiment, the case where the number of horizontal lines of the storage section 2 is one more than the number of horizontal lines of the photoelectric conversion section has been described, but the number may be the same. In that case, the number of horizontal lines actually reproduced on the motor can be eliminated.

第6〜8図は7゛レームトランスフアー型CCI)の光
電変換部1と電荷蓄積部2の中間部に水平シフトレジス
タ31を設は垂直ブランキング期間にスミア成分をこの
水平シフトレジスタ61より読み出すようにした本発明
の第2実施例を説明する為の図である。
In Figures 6 to 8, a horizontal shift register 31 is installed between the photoelectric conversion section 1 and the charge storage section 2 of a 7-frame transfer type CCI), and the smear component is read out from this horizontal shift register 61 during the vertical blanking period. FIG. 3 is a diagram for explaining a second embodiment of the present invention.

この実施例においては第6図示のように充電変換部1ど
電荷蓄積部2の中間部に第2の水平シフトレジスタ31
を設けたCCDを用いる。このような構造については特
開昭58−48455号に詳しい。
In this embodiment, as shown in FIG.
A CCD is used. Details of such a structure can be found in Japanese Patent Application Laid-Open No. 58-48455.

この第2の水平シフトレジスタ61を光′重度換部1及
び電荷蓄積部2と同相で駆動すれば光電変換部1の電荷
はこのレジスタ31を介して電荷蓄積部2に転送され、
光電変換部1及び電荷蓄積部2に印加するクロックパル
スを止めたまま、水平シフトレジスタ31にのみ駆動パ
ルスを加えれば、電荷は電荷蓄積部2へは転送されず、
第2の水平シフトレジスタ61から読み出されるように
構成されている。
If this second horizontal shift register 61 is driven in the same phase as the optical converter 1 and the charge storage section 2, the charge in the photoelectric conversion section 1 will be transferred to the charge storage section 2 via this register 31.
If a driving pulse is applied only to the horizontal shift register 31 while stopping the clock pulse applied to the photoelectric conversion section 1 and the charge storage section 2, the charge will not be transferred to the charge storage section 2,
It is configured to be read from the second horizontal shift register 61.

第7図は本実施例の回路構成を示す図である。FIG. 7 is a diagram showing the circuit configuration of this embodiment.

第6図示の実施例においてはあるフィールドにおいて体
の水平シフトレジスタから画像情報をすべて読み出して
からスミア成分を読み出していたのに対して、第7図示
の第2実施例においては第2の水平シフトレジスタ31
からスミア成分を読み出してから、第1の水平シフトレ
ジスタ6から画像信号を読み出す。したがってスミア補
正信号として画像情報と同じフィールドの信号を用いる
ことができるのでより正確なスミア補正を行うことがで
きるようになるものである。
In the embodiment shown in FIG. 6, all the image information is read out from the horizontal shift register of the body in a certain field and then the smear component is read out, whereas in the second embodiment shown in FIG. register 31
After reading out the smear component from the first horizontal shift register 6, the image signal is read out from the first horizontal shift register 6. Therefore, since a signal of the same field as the image information can be used as the smear correction signal, more accurate smear correction can be performed.

尚、第6図と同じ番号のものは同じ要素を示す。Note that the same numbers as in FIG. 6 indicate the same elements.

40は第6図示のような第2のシフトレジスタを有する
フレームトランスファー型CODである。
40 is a frame transfer type COD having a second shift register as shown in FIG.

又、32は第2のシフ)レジスタ31の出力アン7’ 
T ア’) 、A/D変換26はこのアンプ32の出力
66を入力してデジタル化する。
Further, 32 is the second shift) register 31 output amplifier 7'.
The A/D converter 26 inputs the output 66 of this amplifier 32 and digitizes it.

又、211は前記CCDを駆動する為の駆動回路であり
、第8図のような出力パルスを出力する。
Further, 211 is a drive circuit for driving the CCD, which outputs output pulses as shown in FIG.

第8図中(d)は光電変換部1にかけるパルスψP工。In FIG. 8, (d) shows the pulse ψP applied to the photoelectric conversion unit 1.

(e)は第2の水平シフトレジスタ61にかけるパルス
ψS11 (f)は電荷蓄積部2にかけるパルスψps
 。
(e) is the pulse ψS11 applied to the second horizontal shift register 61 (f) is the pulse ψps applied to the charge storage section 2
.

(g)は第1の水平シフトレジスタ6にかけるパルスψ
S2である。駆動回路211により期間T1oにおいて
光電変換部1に蓄えられていた電荷を電荷蓄積部2に転
送する。次に期間T20で光電変換部1のし み空続出し第2の水平シフトレジスタ61にスミ八 ア成分を加算蓄積する。次に期間’E’30において前
述のスミア成分を第2の水平シフトレジスタより読み出
し、これをたとえばラインメモリ24に記憶しておく。
(g) is the pulse ψ applied to the first horizontal shift register 6
It is S2. The drive circuit 211 transfers the charges stored in the photoelectric conversion section 1 to the charge storage section 2 during the period T1o. Next, in period T20, the smear component is added and accumulated in the second horizontal shift register 61 of the photoelectric conversion unit 1. Next, in period 'E'30, the aforementioned smear component is read out from the second horizontal shift register and stored in the line memory 24, for example.

次に期間T40において電荷蓄積部2にだくわえられて
いた画像情報を水平シフトレジスタbより続み出す。
Next, in period T40, the image information stored in the charge storage section 2 is continuously outputted from the horizontal shift register b.

このように本実施例によれば光電変換部1で蓄積された
電荷を蓄積部2に垂直転送する間及び直後におけるスミ
ア成分を蓄積部からの読み出し出力と演算できるのでよ
り確実にスミアを除く事ができる。
In this way, according to this embodiment, the smear component during and immediately after the vertical transfer of the charge accumulated in the photoelectric conversion section 1 to the accumulation section 2 can be calculated as the readout output from the accumulation section, so that smear can be removed more reliably. I can do it.

(効果) 本発明によりスミアのない画像が極めて簡単に得られる
ようになった。
(Effects) According to the present invention, smear-free images can be obtained extremely easily.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はフレームトランスファCCDのm成因。 第2図は本発明に係るフレームトランスファCCDの構
成図、第6図は本発明の第1実施例図、第4図はCCD
の電極下のポテンシャル状態を示す説明図、第5図は本
発明の第1実施例のタイミング図、第6図は本発明の第
シの実施例に係るCCDの構成図、第7図は第2の実施
例の回路構成図。 第8図は本発明の第2の実施例のタイミング図である。 1は光電変換部、2は電荷蓄積部、6は水平シフトレジ
スタ、7は出力アンプ、9はアンチプルーミングドレイ
ン、20はCCU、21は駆動回路、22は制御回路、
25は、心中変換器、24はラインメモリ、25はD/
A変換器、26はアツテイネータ、31は第2の水平シ
フトレジスタである。
Figure 1 shows the origin of frame transfer CCD. FIG. 2 is a configuration diagram of a frame transfer CCD according to the present invention, FIG. 6 is a diagram of a first embodiment of the present invention, and FIG. 4 is a diagram of a CCD.
5 is a timing diagram of the first embodiment of the present invention, FIG. 6 is a configuration diagram of a CCD according to the second embodiment of the present invention, and FIG. 7 is a diagram showing the potential state under the electrode. FIG. 2 is a circuit configuration diagram of the second embodiment. FIG. 8 is a timing diagram of a second embodiment of the present invention. 1 is a photoelectric conversion unit, 2 is a charge storage unit, 6 is a horizontal shift register, 7 is an output amplifier, 9 is an anti-pluming drain, 20 is a CCU, 21 is a drive circuit, 22 is a control circuit,
25 is a central transducer, 24 is a line memory, and 25 is a D/
A converter, 26 is an attenuator, and 31 is a second horizontal shift register.

Claims (1)

【特許請求の範囲】 フレーム転送型CCDと。 該CCDの光電変換部と蓄積部の境界近傍のライン情報
を読み出して記憶する記憶手段と。 前記蓄積部から読み出されるライン情報と前記記憶手段
に記憶されたライン情報とを演算する演算手段とを有す
る撮像装置。
[Claims] A frame transfer type CCD. storage means for reading and storing line information near the boundary between the photoelectric conversion section and the storage section of the CCD; An imaging device comprising a calculation means for calculating line information read from the storage section and line information stored in the storage means.
JP58112406A 1983-06-22 1983-06-22 Image pickup device Pending JPS604378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58112406A JPS604378A (en) 1983-06-22 1983-06-22 Image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58112406A JPS604378A (en) 1983-06-22 1983-06-22 Image pickup device

Publications (1)

Publication Number Publication Date
JPS604378A true JPS604378A (en) 1985-01-10

Family

ID=14585850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58112406A Pending JPS604378A (en) 1983-06-22 1983-06-22 Image pickup device

Country Status (1)

Country Link
JP (1) JPS604378A (en)

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