JPS6035579A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS6035579A JPS6035579A JP59002292A JP229284A JPS6035579A JP S6035579 A JPS6035579 A JP S6035579A JP 59002292 A JP59002292 A JP 59002292A JP 229284 A JP229284 A JP 229284A JP S6035579 A JPS6035579 A JP S6035579A
- Authority
- JP
- Japan
- Prior art keywords
- films
- photoelectric conversion
- film
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 2
- 238000010248 power generation Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/20—Supporting structures directly fixed to an immovable object
- H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
- H02S20/23—Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures
- H02S20/25—Roof tile elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
【発明の詳細な説明】
（イ） 産業上の利用分野
本発明は光エネルギを′ＦＩ′ｒ、気エネルギに直接変
換する光起電力装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a photovoltaic device that directly converts light energy into 'FI'r, air energy.
（ロ）従来技術
光エネルギを直接軍資エネルギに変換する光起電力装置
、所謂太陽電池は無尽蔵な太陽光を主たるエネルギ源と
しているために、エネルギ資源の枯渇が問題となる中で
脚光を浴ている。太陽は晴天時に約ＩＫＷ／７７ｇ’の
エネルギを地表に与えておシ、家庭で斯るエネルギを電
気エネルギに変換する光起電力装置を家庭用電力源とす
る場合、光起電力装置の光電変換効率を１０％としても
１００Ｗ／７７／の市°力しか得られないために、限ら
れた面積に於いて如何に出力を上昇せしめるかが問題と
なっている。(b) Prior art Photovoltaic devices, so-called solar cells, which directly convert light energy into military energy, have been in the spotlight as the depletion of energy resources has become a problem because they use inexhaustible sunlight as their main energy source. ing. The sun gives about IKW/77 g' of energy to the earth's surface when the weather is clear, and when a photovoltaic device that converts this energy into electrical energy is used as a household power source, the photovoltaic device's photoelectric conversion Even if the efficiency is 10%, the market power is only 100 W/77/, so the problem is how to increase the output in a limited area.
実開昭５８−１１２６１号公報に開示された瓦状光起Ｔ
「力装置を家庭用電力源とする場合、斯る光起電力装置
を現存する屋根瓦に代って敷設するだけでよく、架台等
の新たな敷設設備を必要としない利点を備えている。Tile-shaped Hikari T disclosed in Utility Model Application Publication No. 58-11261
``When using a photovoltaic device as a household power source, it is sufficient to simply install such a photovoltaic device in place of existing roof tiles, and it has the advantage of not requiring new installation equipment such as a mount.
然し乍ら、斯る構造によれば光電変換領域を備えた太陽
電池素子は瓦本体に内蔵せしめられているために、光電
変換領域の隣接間隔は広くならざるを得す、従って基板
面積に対する光電変換領域の占める割合、即ち光利用効
率の低下は免れない。However, according to such a structure, since the solar cell element with the photoelectric conversion area is built into the tile body, the distance between the adjacent photoelectric conversion areas must be wide, and therefore the photoelectric conversion area is smaller than the substrate area. A decrease in the proportion occupied by the light, that is, the light utilization efficiency, is unavoidable.
（ハ）発明の目的
本発明は斯る点に鑑みて為されたものであって、その目
的は上記瓦の如き曲面状表面を備えた光起電力装置に於
いて光利用効率の高い構造を提供するものである。(c) Purpose of the Invention The present invention has been made in view of the above points, and its purpose is to provide a structure with high light utilization efficiency in a photovoltaic device having a curved surface such as the roof tile. This is what we provide.
に）発明の構成
本発明光起電力装置は、基板の曲面状表面に膜状光電変
換領域を直接被着せしめた構成にある。B) Structure of the Invention The photovoltaic device of the present invention has a structure in which a film-like photoelectric conversion region is directly adhered to the curved surface of a substrate.
（ホ）実施例
第１図及び第２図は本発明の一実施例を示し、第１図は
斜視図、第２図は第１図に於けるＡ−Ａ線断面図であっ
て、（１）はガラス等の透光注且つ絶縁性の材料を瓦状
に成形し波状の絶縁表面が付与されｆＣ基板、（２＋＋
２＋・・・は上記基板（１）の絶縁表面に一定間隔で直
接被着された光電変換領域である。上記光電変換領域＋
２１＋２）・・・は、例えば基板（１）側から、酸化ス
ズ、酸化インジウムスズ等の透明導電膜（３）（３）・
・・と、その内部に半導体接合を備えた非晶質半導体膜
ｆ４＋＋４１・・・と、該半導体膜＋４１（４１・・・
とオーミック接触するアルミニウム等の裏面ｉｈ°極膜
（５）（５１・・・と、が順次積層されたミクロンオー
ダの膜状を呈する。(E) Embodiment FIGS. 1 and 2 show an embodiment of the present invention, in which FIG. 1 is a perspective view and FIG. 2 is a sectional view taken along the line A-A in FIG. 1) is an fC substrate, (2++
2+... are photoelectric conversion regions directly deposited on the insulating surface of the substrate (1) at regular intervals. Above photoelectric conversion area +
21+2)... is, for example, a transparent conductive film (3) (3) made of tin oxide, indium tin oxide, etc. from the substrate (1) side.
..., an amorphous semiconductor film f4++41... having a semiconductor junction therein, and the semiconductor film +41 (41...
The backside ih° polar films (5) (51...) made of aluminum or the like which are in ohmic contact with the electrode are sequentially laminated to form a film on the order of microns.
各非晶質半導体膜（４１（４１・・・は、その内部に例
えば膜面に平行なＰＩＮ接合を形成すべく受光面側から
厚み５０〜２５０Ａ程度のＰ型層、４０００〜７０００
Ａ程度のｌ型（真性）層及び３００〜６００Ａ程度のＲ
型層が順次積層被着され、従って基板（１）及び透明導
ｔｌ）ｌ：ｌ１ｉＩ（３１（３１・・・を透過して光入
射があると、主に１型層に於いて自由状態の電子及び正
孔が発生し、斯る電子及び正孔は上記各層が形成するＰ
ＩＮ接合電界に引かれて各透明導電膜（３）（３）・・
・及び裏面電極膜＋５１ ＋５１・・・に集電、され、
隣接する光電変換領域（２）＋２！・・・の透明導電膜
（３＋＋３＋・・・と裏面電極膜（５Ｈ５）・・・どの
重畳により一２剣的にｔｉ１加された電力が取り出され
る。Each amorphous semiconductor film (41 (41...) is a P-type layer with a thickness of about 50-250A from the light-receiving surface side, for example, to form a PIN junction parallel to the film surface,
l-type (intrinsic) layer of about A and R of about 300 to 600 A
The mold layers are sequentially deposited, so that when light is incident through the substrate (1) and the transparent conductor (tl)l:l1iI(31 (31... Electrons and holes are generated, and these electrons and holes are generated by P formed by each of the above layers.
Each transparent conductive film (3) (3) is attracted by the IN junction electric field.
・And the current is collected to the back electrode film +51 +51...,
Adjacent photoelectric conversion area (2) +2! The transparent conductive film (3++3+) and the back electrode film (5H5)... by which superposition the electric power added ti1 is taken out.
而して、第１図及び第２図に示された第１実施例にあっ
ては、波状の曲面の白線（６）に対してその長辺が垂「
）に交叉すべく短冊状の光電変換領域（２）（２）・・
・が平行に整列配置されている。第２図は丁度斯る山紳
（６）に沿った断面図に該当する。In the first embodiment shown in FIGS. 1 and 2, the long side is perpendicular to the white line (6) of the wavy curved surface.
) to intersect with the rectangular photoelectric conversion area (2) (2)...
・are arranged in parallel. Figure 2 corresponds to a cross-sectional view along the mountain line (6).
尚、上記白線とは周知の如く１つの波に於ける最大振幅
力、即ち山を波の進行方向に対して垂直方向に結んだ線
のことである。As is well known, the white line is a line that connects the maximum amplitude force in one wave, that is, the peak in a direction perpendicular to the direction of travel of the wave.
第６図は本実施例装置を南向きの屋根に敷設しｆｃ場合
の太陽光１Ｊｓ１．８２．８３と、光電変換領域（２）
（２）・・・に対する入射角との関係を南中時を中心に
θの角度太陽が束若しくは西に傾斜した時を例に採って
模式的に示したものである。即ち束にθの角度傾斜した
位置から太陽先約Ｓｌが光電変換領域（２１（２＋・・
・を照射せしめると、受光部Ａには該太陽光線Ｓ１が垂
直に入射し、該受光部Ａの光電変換動作は最高となる。Figure 6 shows sunlight 1Js1.82.83 and photoelectric conversion area (2) when the device of this example is installed on a roof facing south.
(2) The relationship between the angle of incidence and the angle of θ centered on the solar zenith is schematically shown by taking as an example the case when the sun is tilted toward the west. That is, from a position tilted at an angle of θ to the bundle, the solar tip approximately Sl is the photoelectric conversion area (21(2+...
When irradiated with , the sunlight S1 enters the light receiving section A perpendicularly, and the photoelectric conversion operation of the light receiving section A becomes the highest.
然し乍ら、受光部Ｂ、受光部Ｃには太陽光線８１が垂直
に入射しないために、その入射光エネルギは、太陽光線
Ｓ１の光エネルギｈνとし、夫々の入射角をσｌ、α２
とした場合、ｈν５ｉｎｃｔｔ 、ｈｖｓｉｎα２とな
り入射角の小さい受光部Ｃの入射光エネｌレギは最小と
なる。However, since the sunlight 81 does not perpendicularly enter the light receiving portions B and C, the incident light energy is the light energy hν of the sunlight S1, and the incident angles are σl and α2.
In this case, hv5inctt and hvsinα2, and the energy level of the incident light at the light receiving part C with a small angle of incidence becomes the minimum.
ただし、上記入射光エネルギは入射光を太陽光線Ｓ１の
みとし、他方向からの光の入射及び反射による入射光の
減衰等については考慮していない。However, the above-mentioned incident light energy assumes that the incident light is only the sunlight S1, and does not take into consideration the incidence of light from other directions and the attenuation of the incident light due to reflection.
従って、受光部Ａ、Ｂ、Ｃの各々は上記入射光エネルギ
ｈｖ、ｈｖＳｒｎａｌ、ｈｖｓｉｎｃｔｚに比例して光
電変換動作を為し、受光部Ａの発Ｗｆｔｔが最大となシ
、受光部Ｃの発電量は最小となる。即ち、受光部Ａ、Ｂ
、Ｏの各４に於ける発電量が相違する。Therefore, each of the light receiving sections A, B, and C performs a photoelectric conversion operation in proportion to the incident light energies hv, hvSrnal, and hvsinctz, and the emission Wftt of the light receiving section A is the maximum, and the power generation amount of the light receiving section C is is the minimum. That is, light receiving parts A and B
, O, the power generation amount in each 4 is different.
一方、太陽光線Ｓ２が受光部Ｂに垂直に入射する南中時
にあっては、該受光部Ｂの発電量が最大となり入射角の
副成分の等しい受光部Ａと受光部Ｃとの発電量は受光部
Ｂよシ小さい。On the other hand, when the sunlight S2 enters the light receiving part B perpendicularly during the mid-south period, the power generation amount of the light receiving part B is maximum, and the power generation amount of the light receiving parts A and C having the same subcomponent of the incident angle is Light receiving part B is smaller.
また、太陽が西にθの角度傾斜した位置から太陽光線８
３が光電変■（領域（２１（２１・・・を照射した場合
、受光部Ａ、Ｂ、Ｃの各々の発電量の大小関係は東にθ
の角度傾斜した位置から照射した場合と逆に受光部Ｃが
最大となる。Also, from the position where the sun is tilted at an angle of θ to the west, the sun's rays are 8
3 is the photoelectric transformer ■ (area (21 (21...
Contrary to the case where the light is irradiated from a position tilted at an angle of , the light receiving portion C becomes the maximum.
この様に各受光部に於ける発電量は太陽の移動と共に変
化するっ
今、例えば第４図の如く第６図に示した受光部Ａ、Ｂ、
Ｏを受光中心とする受光面債の等しい第１、第２．第６
の光７「変換領域（２１（２ｂ）（２Ｃ）及び他の第４
．第５の光？Ｔ！、閲換領域（２ｄ）（２６）を電気的
に直列接続せしめた本発明の第２実施例の光起電力装置
を考えて見る。即ち、東にθ傾斜した太陽光線８１に対
しては第１の光電変換領域（２ａ）が最大の光電変換動
作により約１５ｍＡ／ｉ−４の光市流を発生するものの
、第２、第３の光■変換領域（２ｂ）（２（１りのそれ
は、入射角αｌ、α２を６０°、６０°とすると、１５
ｍＡ／ ｃｄＸｓｎ ６０°中１５ｍＡ／ｄ、１５ｍＡ
／ｃｊＸ５ｉｎ３０°＝７．５ｍＡ／ｃ−となり、光電
Ｎ、 力装置全体の出力電流としては、周知の如く最小
出力に規制されるために、第６の光■変換領域（２Ｃ）
の１５ｍＡ／ｄとなる。即ち、８８４図に示す如く瓦状
の基板（１）の出線（６）に平行に光電変換領域（２ａ
）（２ｂ）（２０）・・・が配置された光起電力装置に
あっては成る１つの光？１５斐換領域が太陽の移動に伴
なって最大の光電流を発生したとしても、他の光電変換
領域がその光電流より小さくなると、光電電力装置全体
の出力重力はその小さな光電流に規制される。In this way, the amount of power generated at each light receiving section changes with the movement of the sun. For example, as shown in FIG.
The first, second, . 6th
Light 7 "conversion area (21 (2b) (2C) and other 4th
．． Fifth light? T! , viewing areas (2d) and (26) are electrically connected in series. That is, although the first photoelectric conversion region (2a) generates a light current of about 15 mA/i-4 due to the maximum photoelectric conversion operation for the sunlight 81 tilted θ to the east, the second and third photoelectric conversion regions (2a) The light conversion area (2b) (2 (1) is 15 if the incident angles αl and α2 are 60° and 60°
mA/cdXsn 15mA/d at 60°, 15mA
/ cj
It becomes 15mA/d. That is, as shown in Fig. 884, the photoelectric conversion area (2a
) (2b) (20) What light is produced by a photovoltaic device in which...? 15 Even if the conversion region generates the largest photocurrent as the sun moves, if other photoelectric conversion regions become smaller than that photocurrent, the output gravity of the entire photovoltaic device will be regulated by that small photocurrent. Ru.
然し乍ら、本発明の第１図及び第２図に示された第１実
施例の如く出線（６）に交叉すべく各光電変換領域（２
１（２）・・・を整列配置せしめると、１つの光電変換
領域＋２１（２）・・・が上記受光部Ａ、Ｂ、Ｃの全て
を同時に含むことになシ、太陽が移動したとしても各光
電変換領域＋２１（２１・・・が発生する光電流は絶え
ず等しく、結果的に光起電力装置全体の出力電流は上昇
する。例えば出力電流が７．５ｍＡ／ｃｄの第４図の第
２実施例装置と比較して、第１実施例装置の出力電流は
、受光部Ａ、Ｂ、０に於いて発生した光電流の相加平均
である、
となり、従って同一形状の基板（１）及び等しい総受光
面積を備え六光電市力装置の出力角力に於いて約６０％
の上昇が図れる。However, as in the first embodiment shown in FIGS. 1 and 2 of the present invention, each photoelectric conversion region (2
If 1(2)... are arranged in alignment, one photoelectric conversion area+21(2)... will contain all of the above light receiving parts A, B, and C at the same time, even if the sun moves. The photocurrent generated by each photoelectric conversion region +21 (21...) is always the same, and as a result, the output current of the entire photovoltaic device increases. Compared to the device of the embodiment, the output current of the device of the first embodiment is the arithmetic average of the photocurrents generated in the light receiving sections A, B, and 0. Approximately 60% of the output angular force of the six-light electric power device with the same total light receiving area
can be expected to increase.
（へ）発明の効果
本発明は以上の説明から明らかな如く、基板の曲面状表
面に膜状光電変換領域を直接被着せしめたので、曲面状
表面に沿って光電変換領域が存在する結果、基枦面積に
対する光電変換領域の占める割合を向−ヒし得、光利用
効率を上昇せしめることができる。(f) Effects of the Invention As is clear from the above description, in the present invention, since the film-like photoelectric conversion region is directly adhered to the curved surface of the substrate, as a result of the presence of the photoelectric conversion region along the curved surface, The ratio of the photoelectric conversion region to the base area can be increased, and the light utilization efficiency can be increased.
第１図は本発明光起電力装置の第１実施例を示す斜視図
、第２図は第１図書こ於けるＡ−ｉ線断面図、第６図は
本発明に於ける太陽と入射角との関係を説明するための
模式図、第４図は本発明光起電力装置のｔｊＳ２実施例
を示す斜視図、を夫々示している。
（１）・・・・・・基板、＋２）（２Ｂ ）（２ｂ ）
（２０）・・−−−−光電変換領域、（６）・・・・・
・出線。Fig. 1 is a perspective view showing the first embodiment of the photovoltaic device of the present invention, Fig. 2 is a sectional view taken along line A-i in Fig. 1, and Fig. 6 is the sun and incident angle in the present invention. FIG. 4 is a schematic diagram for explaining the relationship between the two, and FIG. 4 is a perspective view showing the tjS2 embodiment of the photovoltaic device of the present invention. (1)・・・・・・Board, +2)(2B)(2b)
(20)...---Photoelectric conversion area, (6)...
・Departing line.
Claims (1)
せしめたことを特徴とする光起電力装置。(1) A photovoltaic device characterized in that a film-like photoelectric conversion region is directly adhered to the curved surface of a substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59002292A JPS6035579A (en) | 1984-01-09 | 1984-01-09 | Photovoltaic device |
| FR8412006A FR2550007A1 (en) | 1983-07-29 | 1984-07-27 | Method for producing a semiconducting film and photovoltaic device obtained by the method |
| US06/899,789 US4670293A (en) | 1983-07-29 | 1986-08-22 | Method of making semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59002292A JPS6035579A (en) | 1984-01-09 | 1984-01-09 | Photovoltaic device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58139546A Division JPS6031259A (en) | 1983-07-29 | 1983-07-29 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6035579A true JPS6035579A (en) | 1985-02-23 |
Family
ID=11525296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59002292A Pending JPS6035579A (en) | 1983-07-29 | 1984-01-09 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6035579A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009101925A1 (en) * | 2008-02-12 | 2009-08-20 | Tokyo Electron Limited | Solar cell wherein solar photovoltaic thin film is directly formed on base |
-
1984
- 1984-01-09 JP JP59002292A patent/JPS6035579A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009101925A1 (en) * | 2008-02-12 | 2009-08-20 | Tokyo Electron Limited | Solar cell wherein solar photovoltaic thin film is directly formed on base |
| US8841545B2 (en) | 2008-02-12 | 2014-09-23 | Tohoku University | Solar cell wherein solar photovolatic thin film is directly formed on base |
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