JPS60241271A - 電界効果トランジスタの製造方法 - Google Patents
電界効果トランジスタの製造方法Info
- Publication number
- JPS60241271A JPS60241271A JP59097754A JP9775484A JPS60241271A JP S60241271 A JPS60241271 A JP S60241271A JP 59097754 A JP59097754 A JP 59097754A JP 9775484 A JP9775484 A JP 9775484A JP S60241271 A JPS60241271 A JP S60241271A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- low
- field effect
- electrode
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59097754A JPS60241271A (ja) | 1984-05-16 | 1984-05-16 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59097754A JPS60241271A (ja) | 1984-05-16 | 1984-05-16 | 電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60241271A true JPS60241271A (ja) | 1985-11-30 |
| JPH043102B2 JPH043102B2 (enrdf_load_html_response) | 1992-01-22 |
Family
ID=14200666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59097754A Granted JPS60241271A (ja) | 1984-05-16 | 1984-05-16 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60241271A (enrdf_load_html_response) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6286768A (ja) * | 1985-10-01 | 1987-04-21 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | デイプレツシヨン形−電界効果トランジスタ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57177571A (en) * | 1981-04-24 | 1982-11-01 | Sumitomo Electric Ind Ltd | Field effect transistor and manufacture thereof |
| JPS57210675A (en) * | 1981-06-18 | 1982-12-24 | Matsushita Electric Ind Co Ltd | Manufacture of field effect transistor |
-
1984
- 1984-05-16 JP JP59097754A patent/JPS60241271A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57177571A (en) * | 1981-04-24 | 1982-11-01 | Sumitomo Electric Ind Ltd | Field effect transistor and manufacture thereof |
| JPS57210675A (en) * | 1981-06-18 | 1982-12-24 | Matsushita Electric Ind Co Ltd | Manufacture of field effect transistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6286768A (ja) * | 1985-10-01 | 1987-04-21 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | デイプレツシヨン形−電界効果トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH043102B2 (enrdf_load_html_response) | 1992-01-22 |
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