JPS6024013A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6024013A
JPS6024013A JP13095783A JP13095783A JPS6024013A JP S6024013 A JPS6024013 A JP S6024013A JP 13095783 A JP13095783 A JP 13095783A JP 13095783 A JP13095783 A JP 13095783A JP S6024013 A JPS6024013 A JP S6024013A
Authority
JP
Japan
Prior art keywords
glowth
aperture hole
junction
amorphous
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13095783A
Other languages
Japanese (ja)
Other versions
JPH0654768B2 (en
Inventor
Kazumichi Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP13095783A priority Critical patent/JPH0654768B2/en
Publication of JPS6024013A publication Critical patent/JPS6024013A/en
Publication of JPH0654768B2 publication Critical patent/JPH0654768B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To prevent short circuit in P-N junction even when a metal is selectively formed over there, by selectively depositing Si in a contact hole. CONSTITUTION:SiO2 is deposited on a P type Si wafer, and an aperture hole is provided therein. Ions are implanted from the surface of the wafer 1 to form a region 3. Then amorphous Si containing As 4 and 4' are evaporated over there, and is subsequently heat treated. The amorphous layer with implantation of As ion is thereby subjected to epitaxial glowth from the substrate side, and the Si deposited in the aperture hole is also subjected to epitaxial glowth, so as to become single crystal, while the Si 4' is left amorphous. In the next, step, after the Si 4' is removed, W 5 is glowth selectively in the aperture hole by a pressure reducing CVD for running tungsten hexafluoride. In this case, since Si single crystal exists in the aperture hole, the W glown to the SiO2-Si interface does not reach the P-N junction, so that no short circuit occurs in the junction.
JP13095783A 1983-07-20 1983-07-20 Method for manufacturing semiconductor device Expired - Lifetime JPH0654768B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13095783A JPH0654768B2 (en) 1983-07-20 1983-07-20 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13095783A JPH0654768B2 (en) 1983-07-20 1983-07-20 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6024013A true JPS6024013A (en) 1985-02-06
JPH0654768B2 JPH0654768B2 (en) 1994-07-20

Family

ID=15046584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13095783A Expired - Lifetime JPH0654768B2 (en) 1983-07-20 1983-07-20 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0654768B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189221A (en) * 1984-03-08 1985-09-26 Nippon Denso Co Ltd Manufacture of semiconductor device
JPS6252043A (en) * 1985-08-31 1987-03-06 Toyo Seikan Kaisha Ltd Joint coated welded can
JPS62188314A (en) * 1986-02-14 1987-08-17 Matsushita Electronics Corp Manufacture of semiconductor device
JPS63281424A (en) * 1987-05-13 1988-11-17 Toshiba Corp Formation of polycide electrode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189221A (en) * 1984-03-08 1985-09-26 Nippon Denso Co Ltd Manufacture of semiconductor device
JPH0574218B2 (en) * 1984-03-08 1993-10-18 Nippon Denso Co
JPS6252043A (en) * 1985-08-31 1987-03-06 Toyo Seikan Kaisha Ltd Joint coated welded can
JPH0558995B2 (en) * 1985-08-31 1993-08-27 Toyo Seikan Kaisha Ltd
JPS62188314A (en) * 1986-02-14 1987-08-17 Matsushita Electronics Corp Manufacture of semiconductor device
JPS63281424A (en) * 1987-05-13 1988-11-17 Toshiba Corp Formation of polycide electrode

Also Published As

Publication number Publication date
JPH0654768B2 (en) 1994-07-20

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