JPS60231368A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60231368A
JPS60231368A JP59086243A JP8624384A JPS60231368A JP S60231368 A JPS60231368 A JP S60231368A JP 59086243 A JP59086243 A JP 59086243A JP 8624384 A JP8624384 A JP 8624384A JP S60231368 A JPS60231368 A JP S60231368A
Authority
JP
Japan
Prior art keywords
layer
type transistor
semiconductor
transistor portion
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59086243A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033935B2 (enrdf_load_stackoverflow
Inventor
Masahisa Suzuki
雅久 鈴木
Takashi Mimura
高志 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59086243A priority Critical patent/JPS60231368A/ja
Priority to US06/728,080 priority patent/US4615102A/en
Priority to EP85303057A priority patent/EP0175437B1/en
Priority to KR1019850002915A priority patent/KR890004456B1/ko
Priority to DE8585303057T priority patent/DE3566594D1/de
Publication of JPS60231368A publication Critical patent/JPS60231368A/ja
Publication of JPH033935B2 publication Critical patent/JPH033935B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59086243A 1984-05-01 1984-05-01 半導体装置の製造方法 Granted JPS60231368A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59086243A JPS60231368A (ja) 1984-05-01 1984-05-01 半導体装置の製造方法
US06/728,080 US4615102A (en) 1984-05-01 1985-04-29 Method of producing enhancement mode and depletion mode FETs
EP85303057A EP0175437B1 (en) 1984-05-01 1985-04-30 Production of gaas enhancement and depletion mode hemt's
KR1019850002915A KR890004456B1 (ko) 1984-05-01 1985-04-30 반도체장치의 제조방법
DE8585303057T DE3566594D1 (en) 1984-05-01 1985-04-30 Production of gaas enhancement and depletion mode hemt's

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59086243A JPS60231368A (ja) 1984-05-01 1984-05-01 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60231368A true JPS60231368A (ja) 1985-11-16
JPH033935B2 JPH033935B2 (enrdf_load_stackoverflow) 1991-01-21

Family

ID=13881366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59086243A Granted JPS60231368A (ja) 1984-05-01 1984-05-01 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60231368A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213173A (ja) * 1986-03-14 1987-09-19 Hitachi Ltd 半導体装置の製造方法
JPS63222462A (ja) * 1987-03-12 1988-09-16 Fujitsu Ltd 半導体装置及びその製造方法
JPS63228673A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd 化合物半導体集積回路装置及びその製造方法
JPH01152674A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd ヘテロ接合電界効果トランジスタ
US5021857A (en) * 1988-11-29 1991-06-04 Fujitsu Limited Two dimensional electron gas semiconductor device
KR100233830B1 (ko) * 1996-08-28 1999-12-01 정선종 이-메스페트와 디-메스페트 제조용 기판 구조 및 제조방법과 이를 이용한 이-메스페트와 디-메스페트 구조 및 제조방법
US6078067A (en) * 1996-09-27 2000-06-20 Nec Corporation Semiconductor device having mutually different two gate threshold voltages
US6218685B1 (en) 1998-01-08 2001-04-17 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338872A (ja) * 1986-07-30 1988-02-19 堂腰　純 氷の製法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6338872A (ja) * 1986-07-30 1988-02-19 堂腰　純 氷の製法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213173A (ja) * 1986-03-14 1987-09-19 Hitachi Ltd 半導体装置の製造方法
JPS63222462A (ja) * 1987-03-12 1988-09-16 Fujitsu Ltd 半導体装置及びその製造方法
JPS63228673A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd 化合物半導体集積回路装置及びその製造方法
JPH01152674A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd ヘテロ接合電界効果トランジスタ
US5021857A (en) * 1988-11-29 1991-06-04 Fujitsu Limited Two dimensional electron gas semiconductor device
KR100233830B1 (ko) * 1996-08-28 1999-12-01 정선종 이-메스페트와 디-메스페트 제조용 기판 구조 및 제조방법과 이를 이용한 이-메스페트와 디-메스페트 구조 및 제조방법
US6078067A (en) * 1996-09-27 2000-06-20 Nec Corporation Semiconductor device having mutually different two gate threshold voltages
US6218685B1 (en) 1998-01-08 2001-04-17 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
JPH033935B2 (enrdf_load_stackoverflow) 1991-01-21

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