JPS60219766A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60219766A
JPS60219766A JP59075885A JP7588584A JPS60219766A JP S60219766 A JPS60219766 A JP S60219766A JP 59075885 A JP59075885 A JP 59075885A JP 7588584 A JP7588584 A JP 7588584A JP S60219766 A JPS60219766 A JP S60219766A
Authority
JP
Japan
Prior art keywords
emitter
collector
base
potential barrier
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59075885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0337735B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takashi Mimura
高志 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59075885A priority Critical patent/JPS60219766A/ja
Priority to CA000478704A priority patent/CA1237824A/en
Priority to DE8585400744T priority patent/DE3583302D1/de
Priority to EP85400744A priority patent/EP0159273B1/en
Priority to KR1019850002594A priority patent/KR900004466B1/ko
Publication of JPS60219766A publication Critical patent/JPS60219766A/ja
Priority to US07/059,216 priority patent/US4958201A/en
Publication of JPH0337735B2 publication Critical patent/JPH0337735B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP59075885A 1984-04-17 1984-04-17 半導体装置 Granted JPS60219766A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59075885A JPS60219766A (ja) 1984-04-17 1984-04-17 半導体装置
CA000478704A CA1237824A (en) 1984-04-17 1985-04-10 Resonant tunneling semiconductor device
DE8585400744T DE3583302D1 (de) 1984-04-17 1985-04-16 Halbleiteranordnung.
EP85400744A EP0159273B1 (en) 1984-04-17 1985-04-16 Semiconductor device
KR1019850002594A KR900004466B1 (ko) 1984-04-17 1985-04-17 반도체 장치
US07/059,216 US4958201A (en) 1984-04-17 1987-06-05 Resonant tunneling minority carrier transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59075885A JPS60219766A (ja) 1984-04-17 1984-04-17 半導体装置

Publications (2)

Publication Number Publication Date
JPS60219766A true JPS60219766A (ja) 1985-11-02
JPH0337735B2 JPH0337735B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-06-06

Family

ID=13589189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59075885A Granted JPS60219766A (ja) 1984-04-17 1984-04-17 半導体装置

Country Status (1)

Country Link
JP (1) JPS60219766A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6154665A (ja) * 1984-08-24 1986-03-18 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
JPS6331165A (ja) * 1986-07-18 1988-02-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 共鳴トンネリング半導体デバイス
WO1988004474A1 (fr) * 1986-12-03 1988-06-16 Hitachi, Ltd. Transistor bipolaire a heterojonction
JPS63199511A (ja) * 1987-02-14 1988-08-18 Fujitsu Ltd 比較回路
JPS63217819A (ja) * 1987-03-06 1988-09-09 Fujitsu Ltd 半導体装置
JPH01500787A (ja) * 1986-07-01 1989-03-16 ヒユーズ・エアクラフト・カンパニー 増大した電荷キャリア濃度を有する量子井戸レーザ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105785A (en) * 1976-02-27 1977-09-05 Max Planck Gesellschaft Multiilayer semiconductor element
JPS583277A (ja) * 1981-06-30 1983-01-10 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 半導体共鳴トンネル３極装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105785A (en) * 1976-02-27 1977-09-05 Max Planck Gesellschaft Multiilayer semiconductor element
JPS583277A (ja) * 1981-06-30 1983-01-10 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 半導体共鳴トンネル３極装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6154665A (ja) * 1984-08-24 1986-03-18 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
JPH01500787A (ja) * 1986-07-01 1989-03-16 ヒユーズ・エアクラフト・カンパニー 増大した電荷キャリア濃度を有する量子井戸レーザ
JPS6331165A (ja) * 1986-07-18 1988-02-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 共鳴トンネリング半導体デバイス
WO1988004474A1 (fr) * 1986-12-03 1988-06-16 Hitachi, Ltd. Transistor bipolaire a heterojonction
JPS63199511A (ja) * 1987-02-14 1988-08-18 Fujitsu Ltd 比較回路
JPS63217819A (ja) * 1987-03-06 1988-09-09 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
JPH0337735B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-06-06

Similar Documents

Publication Publication Date Title
EP0159273B1 (en) Semiconductor device
US4366493A (en) Semiconductor ballistic transport device
JPH05110086A (ja) トンネルトランジスタ
KR910004315B1 (ko) 열전자 유니폴라 트랜지스터
JPS63140570A (ja) 半導体装置
JPH06506563A (ja) 半導体素子
JP2689057B2 (ja) 静電誘導型半導体装置
JPS60219766A (ja) 半導体装置
JPS61147577A (ja) 相補型半導体装置
JP2001156301A (ja) 共鳴トンネル装置
JP2701583B2 (ja) トンネルトランジスタ及びその製造方法
JPH0337737B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH032350B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
Chen et al. Device technology for monolithic integration of InP-based resonant tunneling diodes and HEMTs
JPS59181069A (ja) 半導体装置
JPS63244779A (ja) 電界効果トランジスタ
JPH0337736B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4994882A (en) Semiconductor device and method
JPS6197966A (ja) 半導体装置
JPH0831471B2 (ja) 共鳴トンネリングトランジスタ
JP2695832B2 (ja) ヘテロ接合型電界効果トランジスタ
CN118156307A (zh) 一种基于隧穿结的p沟道晶体管结构及其制备方法
JPS61189663A (ja) 半導体集積回路及びその製造方法
JPH07231085A (ja) トンネルトランジスタおよびその製造方法
JPH0210747A (ja) 半導体集積装置及びその製造方法